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Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectors

Journal of crystal growth, 2013-09, Vol.378, p.65-68

2013

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NaCl salinity-induced changes in water status, ion contents and photosynthetic properties of Shepherdia argentea (Pursh) Nutt. seedlings

Plant, soil and environment, 2010-07, Vol.56 (7), p.325-332

2010

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AlInP-GaInP-GaAs UV-enhanced photovoltaic detectors grown by gas source MBE

IEEE photonics technology letters, 2005-06, Vol.17 (6), p.1265-1267

2005

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A Tm3+-doped ZrF4-BaF2-YF3-AlF3 glass microsphere laser in the 2.0 μm wavelength region

Journal of luminescence, 2019-08, Vol.212, p.207-211

2019

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Effects of well widths and well numbers on InP-based triangular quantum well lasers beyond 2.4 µm

Journal of crystal growth, 2015-09, Vol.425, p.376-380

2015

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Effects of well widths and well numbers on InP-based triangular quantum well lasers beyond 2.4µm

Journal of crystal growth, 2015-09, Vol.425, p.376-380

2015

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Effects of continuously graded or step-graded In Al1−As buffer on the performance of InP-based In0.83Ga0.17As photodetectors

Journal of crystal growth, 2015-09, Vol.425, p.337-340

2015

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Effects of continuously graded or step-graded InxAl1−xAs buffer on the performance of InP-based In0.83Ga0.17As photodetectors

Journal of crystal growth, 2015-09, Vol.425, p.337-340

2015

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Analysis of dark currents and deep level traps in InP- and GaAs-based In0.83Ga0.17As photodetectors

Journal of crystal growth, 2017-11, Vol.477, p.82-85

2017

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Optimization of InAlAs buffers for growth of GaAs-based high indium content InGaAs photodetectors

Journal of crystal growth, 2015-09, Vol.425, p.346-350

2015

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Metamorphic InAs quantum well lasers on InP substrates with different well shapes and waveguides

Journal of crystal growth, 2017-11, Vol.477, p.253-257

2017

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The effect of strain on the miscibility gap in Ga–In–Sb ternary alloy

Journal of crystal growth, 1999-06, Vol.203 (4), p.511-515

1999

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The effects of injector doping densities on lasing properties of InP-based quantum cascade lasers at 4.3μm

Journal of crystal growth, 2013-09, Vol.378, p.587-590

2013

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Performance of gas source MBE grown InAlGaAs photovoltaic detectors tailored to 1.4μm

Journal of crystal growth, 2013-09, Vol.378, p.579-582

2013

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Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1–2.4 μm range

Journal of crystal growth, 2009-03, Vol.311 (7), p.1935-1938

2009

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Characterization of GaN grown by RF plasma MBE

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-06, Vol.75 (2), p.224-227

2000

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Performance of gas source MBE-grown wavelength-extended InGaAs photodetectors with different buffer structures

Journal of crystal growth, 2009-03, Vol.311 (7), p.1881-1884

2009

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Gas source MBE grown Al0.52In0.48P photovoltaic detector

Journal of crystal growth, 2011-05, Vol.323 (1), p.501-503

2011

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Growth of InAs/GaSb type-II superlattices by gas-source molecular-beam epitaxy

Journal of crystal growth, 2009-03, Vol.311 (7), p.1703-1706

2009

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High quality GaN film overgrown on GaN nanorods array template by HVPE

Materials letters, 2010-07, Vol.64 (13), p.1490-1492

2010

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Effect of nanoporous GaN templates with different pore diameters on the subsequent thick GaN layers by HVPE

Solid state communications, 2010, Vol.150 (3), p.168-171

2010

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Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE

Journal of crystal growth, 2009-03, Vol.311 (7), p.1929-1931

2009

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Optical properties of gas source MBE grown AlInP on GaAs

Materials science & engineering. B, Solid-state materials for advanced technology, 2007-05, Vol.139 (2), p.246-250

2007

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Gas source MBE growth and doping characteristics of AlInP on GaAs

Materials science & engineering. B, Solid-state materials for advanced technology, 2006-07, Vol.131 (1), p.49-53

2006

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Polymeric 1 × 32 arrayed waveguide grating multiplexer using cross-linkable fluorinated poly (ether ether ketone) at 1550 nm

Optical materials, 2006, Vol.28 (5), p.494-497

2006

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Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectors

NaCl salinity-induced changes in water status, ion contents and photosynthetic properties of Shepherdia argentea (Pursh) Nutt. seedlings

AlInP-GaInP-GaAs UV-enhanced photovoltaic detectors grown by gas source MBE

A Tm3+-doped ZrF4-BaF2-YF3-AlF3 glass microsphere laser in the 2.0 μm wavelength region

Effects of well widths and well numbers on InP-based triangular quantum well lasers beyond 2.4 µm

Effects of well widths and well numbers on InP-based triangular quantum well lasers beyond 2.4µm

Effects of continuously graded or step-graded In Al1−As buffer on the performance of InP-based In0.83Ga0.17As photodetectors

Effects of continuously graded or step-graded InxAl1−xAs buffer on the performance of InP-based In0.83Ga0.17As photodetectors

Analysis of dark currents and deep level traps in InP- and GaAs-based In0.83Ga0.17As photodetectors

Optimization of InAlAs buffers for growth of GaAs-based high indium content InGaAs photodetectors

Metamorphic InAs quantum well lasers on InP substrates with different well shapes and waveguides

The effect of strain on the miscibility gap in Ga–In–Sb ternary alloy

The effects of injector doping densities on lasing properties of InP-based quantum cascade lasers at 4.3μm

Performance of gas source MBE grown InAlGaAs photovoltaic detectors tailored to 1.4μm

Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1–2.4 μm range

Characterization of GaN grown by RF plasma MBE

Performance of gas source MBE-grown wavelength-extended InGaAs photodetectors with different buffer structures

Gas source MBE grown Al0.52In0.48P photovoltaic detector

Growth of InAs/GaSb type-II superlattices by gas-source molecular-beam epitaxy

High quality GaN film overgrown on GaN nanorods array template by HVPE

Effect of nanoporous GaN templates with different pore diameters on the subsequent thick GaN layers by HVPE

Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE

Optical properties of gas source MBE grown AlInP on GaAs

Gas source MBE growth and doping characteristics of AlInP on GaAs

Polymeric 1 × 32 arrayed waveguide grating multiplexer using cross-linkable fluorinated poly (ether ether ketone) at 1550 nm

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