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Tuning of NiSi ∕ Si Schottky barrier heights by sulfur segregation during Ni silicidation

Applied physics letters, 2005-02, Vol.86 (6), p.062108-062108-3

2005

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Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation

Applied physics letters, 2005-12, Vol.87 (26), p.263505-263505-3

2005

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Amorphous ternary rare-earth gate oxides for future integration in MOSFETs

Microelectronic engineering, 2009-07, Vol.86 (7), p.1646-1649

2009

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Asymmetric strain relaxation in patterned SiGe layers: A means to enhance carrier mobilities in Si cap layers

Applied physics letters, 2007-01, Vol.90 (3)

2007

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Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates

Journal of applied physics, 2002-10, Vol.92 (8), p.4290-4295

2002

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Electrical and Structural Properties of Ternary Rare-Earth Oxides on Si and Higher Mobility Substrates and their Integration as High-k Gate Dielectrics in MOSFET Devices

ECS transactions, 2011, Vol.35 (4), p.461-479

2011

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Full silicidation process for making CoSi2 on SiO2

Applied physics letters, 2004-04, Vol.84 (17), p.3292-3294

2004

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Gadolinium scandate thin films as an alternative gate dielectric prepared by electron beam evaporation

Applied physics letters, 2006-04, Vol.88 (17), p.172901-172901-3

2006

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Segregation of ion implanted sulfur in Si(100) after annealing and nickel silicidation

Journal of applied physics, 2007-07, Vol.102 (2)

2007

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Effects of annealing on the electrical and interfacial properties of amorphous lanthanum scandate high- κ films prepared by molecular beam deposition

Journal of applied physics, 2007-05, Vol.101 (10), p.104109-104109-5

2007

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Segregation of ion implanted sulfur in Si(100) after annealingand nickel silicidation

Journal of applied physics, 2007-07, Vol.102 (2), p.023522-023522-4

2007

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Strain relaxation of pseudomorphic [formula omitted] heterostructures after hydrogen or helium ion implantation for virtual substrate fabrication

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2001-04, Vol.175, p.357-367

2001

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LaScO 3 as a higher- κ dielectric for p-MOSFETs

Microelectronic engineering, 2011, Vol.88 (7), p.1323-1325

2011

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Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technology

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-01, Vol.29 (1), p.1

2011

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Asymmetric strain relaxation in patterned SiGe layers: A meansto enhance carrier mobilities in Si cap layers

Applied physics letters, 2007-01, Vol.90 (3), p.032108-032108-3

2007

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SmScO 3 thin films as an alternative gate dielectric

Applied physics letters, 2008-08, Vol.93 (5), p.052902-052902-3

2008

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LaLuO3 higher-κ dielectric integration in SOI MOSFETs with a gate-first process

Solid-state electronics, 2012-05, Vol.71, p.19-24

2012

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Low temperature measurements of Schottky-barrier SOI-MOSFETs with dopant segregation

Electronics letters, 2005-09, Vol.41 (19), p.1085-1086

2005

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LaScO3 as a higher-κ dielectric for p-MOSFETs

Microelectronic engineering, 2011-07, Vol.88 (7), p.1323-1325

2011

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Nanopatterning of epitaxial CoSi2 using oxidation in a local stress field and fabrication of nanometer metal-oxide-semiconductor field-effect transistors

Journal of applied physics, 2004-11, Vol.96 (10), p.5775-5780

2004

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Schottky barrier height modulation using dopant segregation in Schottky-barrier SOI-MOSFETs

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005, 2005, p.457-460

2005

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Effects of annealing on the electrical and interfacial properties of amorphous lanthanum scandate high-{kappa} films prepared by molecular beam deposition

Journal of applied physics, 2007-05, Vol.101 (10)

2007

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Formation of ternary Ni-silicide on relaxed and strained SiGe layers

Microelectronic engineering, 2004-10, Vol.76 (1-4), p.285-289

2004

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Low temperature measurements of Schottky-barrier SOI-MOSFETs with dopant segregation

Electronics letters, 2005-09, Vol.41 (19), p.1-1

2005

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Strain relaxation of pseudomorphic Si1−xGex∕Si(100) heterostructures after Si+ ion implantation

Journal of applied physics, 2004-08, Vol.96 (3), p.1745-1747

2004

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Tuning of NiSi ∕ Si Schottky barrier heights by sulfur segregation during Ni silicidation

Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation

Amorphous ternary rare-earth gate oxides for future integration in MOSFETs

Asymmetric strain relaxation in patterned SiGe layers: A means to enhance carrier mobilities in Si cap layers

Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates

Electrical and Structural Properties of Ternary Rare-Earth Oxides on Si and Higher Mobility Substrates and their Integration as High-k Gate Dielectrics in MOSFET Devices

Full silicidation process for making CoSi2 on SiO2

Gadolinium scandate thin films as an alternative gate dielectric prepared by electron beam evaporation

Segregation of ion implanted sulfur in Si(100) after annealing and nickel silicidation

Effects of annealing on the electrical and interfacial properties of amorphous lanthanum scandate high- κ films prepared by molecular beam deposition

Segregation of ion implanted sulfur in Si(100) after annealingand nickel silicidation

Strain relaxation of pseudomorphic [formula omitted] heterostructures after hydrogen or helium ion implantation for virtual substrate fabrication

LaScO 3 as a higher- κ dielectric for p-MOSFETs

Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technology

Asymmetric strain relaxation in patterned SiGe layers: A meansto enhance carrier mobilities in Si cap layers

SmScO 3 thin films as an alternative gate dielectric

LaLuO3 higher-κ dielectric integration in SOI MOSFETs with a gate-first process

Low temperature measurements of Schottky-barrier SOI-MOSFETs with dopant segregation

LaScO3 as a higher-κ dielectric for p-MOSFETs

Nanopatterning of epitaxial CoSi2 using oxidation in a local stress field and fabrication of nanometer metal-oxide-semiconductor field-effect transistors

Schottky barrier height modulation using dopant segregation in Schottky-barrier SOI-MOSFETs

Effects of annealing on the electrical and interfacial properties of amorphous lanthanum scandate high-{kappa} films prepared by molecular beam deposition

Formation of ternary Ni-silicide on relaxed and strained SiGe layers

Low temperature measurements of Schottky-barrier SOI-MOSFETs with dopant segregation

Strain relaxation of pseudomorphic Si1−xGex∕Si(100) heterostructures after Si+ ion implantation

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