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Competing relaxation mechanisms in strained layers

Physical review letters, 1994-05, Vol.72 (22), p.3570-3573

1994

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Anomalous strain relaxation in SiGe thin films and superlattices

Physical review letters, 1991-06, Vol.66 (22), p.2903-2906

1991

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Defect self-annihilation in surfactant-mediated epitaxial growth

Physical review letters, 1991-08, Vol.67 (9), p.1130-1133

1991

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Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices

Journal of applied physics, 1992-05, Vol.71 (9), p.4230-4243

1992

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Oxidation studies of SiGe

Journal of applied physics, 1989-02, Vol.65 (4), p.1724-1728

1989

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New approach to the growth of low dislocation relaxed SiGe material

Applied physics letters, 1994-04, Vol.64 (14), p.1856-1858

1994

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Growth and strain compensation effects in the ternary Si1-x-yGexCy alloy system

Applied physics letters, 1992-06, Vol.60 (24), p.3033-3035

1992

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Identification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructures

Physical review letters, 1994-12, Vol.73 (25), p.3447-3450

1994

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Kinetics and mechanism of oxidation of SiGe: dry versus wet oxidation

Applied physics letters, 1989-02, Vol.54 (7), p.644-646

1989

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Surfactant coverage and epitaxy of Ge on Ga-terminated Si(111)

Applied physics letters, 1993-06, Vol.62 (23), p.2962-2964

1993

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High-temperature SiO2 decomposition at the SiO2/Si interface

Physical review letters, 1985-11, Vol.55 (21), p.2332-2335

1985

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Nucleation of dislocations in SiGe layers grown on (001)Si

Journal of applied physics, 1994-04, Vol.75 (8), p.3968-3977

1994

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Relaxed Si0.7Ge0.3 buffer layers for high-mobility devices

Applied physics letters, 1995-10, Vol.67 (16), p.2373-2375

1995

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Crystallographic tilting resulting from nucleation limited relaxation

Applied physics letters, 1993-01, Vol.62 (2), p.140-142

1993

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Strain relaxation and mosaic structure in relaxed SiGe layers

Applied physics letters, 1993-06, Vol.62 (26), p.3464-3466

1993

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Diffusion versus oxidation rates in silicon-germanium alloys

Applied physics letters, 1991-07, Vol.59 (1), p.78-80

1991

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Novel strain-induced defect in thin molecular-beam epitaxy layers

Physical review letters, 1989-10, Vol.63 (17), p.1826-1829

1989

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Surface-stress-induced order in SiGe alloy films

Physical review letters, 1990-04, Vol.64 (17), p.2038-2041

1990

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Orientation dependence of grain-boundary critical currents in YBa2Cu3O7-δ bicrystals

Physical review letters, 1988-07, Vol.61 (2), p.219-222

1988

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Measurement of the activation barrier to nucleation of dislocations in thin films

Physical review letters, 1993-07, Vol.71 (3), p.396-399

1993

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In situ ultrahigh vacuum transmission electron microscopy studies of hetero-epitaxial growth. I. Si(001)/Ge

Surface science, 1996-04, Vol.349 (2), p.129-144

1996

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Nonequilibrium boron doping effects in low-temperature epitaxial silicon films

Applied physics letters, 1987-01, Vol.50 (2), p.113-115

1987

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Synthesis of Si1-yCy alloys by molecular beam epitaxy

Applied physics letters, 1992-01, Vol.60 (3), p.356-358

1992

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Evolution of strain relaxation in step-graded SiGe/Si structures

Applied physics letters, 1995-06, Vol.66 (26), p.3642-3644

1995

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Relaxation of SiGe thin films grown on Si/SiO2 substrates

Journal of applied physics, 1994-06, Vol.75 (11), p.7240-7246

1994

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Competing relaxation mechanisms in strained layers

Anomalous strain relaxation in SiGe thin films and superlattices

Defect self-annihilation in surfactant-mediated epitaxial growth

Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices

Oxidation studies of SiGe

New approach to the growth of low dislocation relaxed SiGe material

Growth and strain compensation effects in the ternary Si1-x-yGexCy alloy system

Identification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructures

Kinetics and mechanism of oxidation of SiGe: dry versus wet oxidation

Surfactant coverage and epitaxy of Ge on Ga-terminated Si(111)

High-temperature SiO2 decomposition at the SiO2/Si interface

Nucleation of dislocations in SiGe layers grown on (001)Si

Relaxed Si0.7Ge0.3 buffer layers for high-mobility devices

Crystallographic tilting resulting from nucleation limited relaxation

Strain relaxation and mosaic structure in relaxed SiGe layers

Diffusion versus oxidation rates in silicon-germanium alloys

Novel strain-induced defect in thin molecular-beam epitaxy layers

Surface-stress-induced order in SiGe alloy films

Orientation dependence of grain-boundary critical currents in YBa2Cu3O7-δ bicrystals

Measurement of the activation barrier to nucleation of dislocations in thin films

In situ ultrahigh vacuum transmission electron microscopy studies of hetero-epitaxial growth. I. Si(001)/Ge

Nonequilibrium boron doping effects in low-temperature epitaxial silicon films

Synthesis of Si1-yCy alloys by molecular beam epitaxy

Evolution of strain relaxation in step-graded SiGe/Si structures

Relaxation of SiGe thin films grown on Si/SiO2 substrates

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