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A 0.18 μm CMOS 2.45 GHz low-power quadrature VCO with 15% tuning range

Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium, 2002, p.67-70

2002

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0.75 Watt and 5 Watt drivers in standard 65nm CMOS technology for high power RF applications

2012 IEEE Radio Frequency Integrated Circuits Symposium, 2012, p.283-286

2012

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A 1.2-2.8 GHz Tunable Low-noise Amplifier with 0.8-1.6 dB Noise Figure

2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2019, p.3-6

2019

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A 1.2-V 10-[Formula Omitted]W NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2 [Formula Omitted]C (3[Formula Omitted]) From [Formula Omitted]70 [Formula Omitted]C to 125 [Formula Omitted]C

IEEE journal of solid-state circuits, 2010-12, Vol.45 (12), p.2591

2010

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A 1.2-V 10- \mu W NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2 ^ C (3 \sigma ) From - 70 ^ C to 125 ^ C

IEEE journal of solid-state circuits, 2010-12, Vol.45 (12), p.2591-2601

2010

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A 1.95 GHz Sub-1 dB NF, +40 dBm OIP3 WCDMA LNA Module

IEEE journal of solid-state circuits, 2012-07, Vol.47 (7), p.1672-1680

2012

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A 1-Watt Ku-band power amplifier in SiGe with 37.5% PAE

2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2016, p.324-325

2016

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A 100 Gb/s DC-Coupled Optical Modulator Driver for 3D Photonic Electronic Wafer-Scale Packaging

2020 IEEE International Symposium on Circuits and Systems (ISCAS), 2020, p.1-5

2020

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A 15-mw fully integrated I/Q synthesizer for bluetooth in 0.18-μm CMOS

IEEE journal of solid-state circuits, 2003-07, Vol.38 (7), p.1155-1162

2003

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A 16-43 GHz low-noise amplifer with 2.5-4.0 dB noise figure

2016 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2016, p.349-352

2016

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A 2.4-ghz 0.18-μm cmos self-biased cascode power amplifier

IEEE journal of solid-state circuits, 2003-08, Vol.38 (8), p.1318-1324

2003

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A 2.4 GHz 0.18 mu m CMOS self-biased cascode power amplifier with 23 dBm output power

Digest of technical papers - IEEE International Solid-State Circuits Conference, 2002-01, p.232-233+485-486

2002

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A 2.4GHz 830pJ/bit duty-cycled wake-up receiver with −82dBm sensitivity for crystal-less wireless sensor nodes

2010 IEEE International Solid-State Circuits Conference - (ISSCC), 2010, p.224-225

2010

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A 2.5-10-gHz clock multiplier unit with 0.22-ps RMS jitter in standard 0.18-μm CMOS

IEEE journal of solid-state circuits, 2004-11, Vol.39 (11), p.1862-1872

2004

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A 200 [mu]A Duty-Cycled PLL for Wireless Sensor Nodes in 65 nm CMOS

IEEE journal of solid-state circuits, 2010-07, Vol.45 (7), p.1305

2010

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A 200 μA Duty-Cycled PLL for Wireless Sensor Nodes in 65 nm CMOS

IEEE journal of solid-state circuits, 2010-07, Vol.45 (7), p.1305-1315

2010

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A 28/38 GHz Dual-Band Power Amplifier for 5G Communication

IEEE transactions on microwave theory and techniques, 2022-09, Vol.70 (9), p.4177-4186

2022

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A 29-37 GHz BiCMOS Low-Noise Amplifier with 28.5 dB Peak Gain and 3.1-4.1 dB NF

2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2018, p.288-291

2018

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A 30/35 GHz Dual-Band Transmitter for Phased Arrays in Communication/Radar Applications

IEEE journal of solid-state circuits, 2015-07, Vol.50 (7), p.1629-1644

2015

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A 30/35GHz phased array transmitter front-end with >+14dBm Psat and 10° phase/5-bit amplitude resolution for advanced beamforming

ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC), 2014, p.171-174

2014

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A 40GHz PLL with −92.5dBc/Hz in-band phase noise and 104fs-RMS-jitter

2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2017, p.31-32

2017

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A 550-1050MHz +30dBm class-E power amplifier in 65nm CMOS

2011 IEEE Radio Frequency Integrated Circuits Symposium, 2011, p.1-4

2011

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A 58-64 GHz Transformer-based Differential Rectifier in 40 nm CMOS with -12 dBm Sensitivity for 1 V at 64 GHz

2019 IEEE MTT-S International Microwave Symposium (IMS), 2019, p.1306-1308

2019

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A 65 nm CMOS 30 dBm Class-E RF Power Amplifier With 60% PAE and 40% PAE at 16 dB Back-Off

IEEE journal of solid-state circuits, 2009-05, Vol.44 (5), p.1372-1379

2009

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A 65 nm CMOS Inductorless Triple Band Group WiMedia UWB PHY

IEEE journal of solid-state circuits, 2009-12, Vol.44 (12), p.3499-3510

2009

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A 0.18 μm CMOS 2.45 GHz low-power quadrature VCO with 15% tuning range

0.75 Watt and 5 Watt drivers in standard 65nm CMOS technology for high power RF applications

A 1.2-2.8 GHz Tunable Low-noise Amplifier with 0.8-1.6 dB Noise Figure

A 1.2-V 10-[Formula Omitted]W NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2 [Formula Omitted]C (3[Formula Omitted]) From [Formula Omitted]70 [Formula Omitted]C to 125 [Formula Omitted]C

A 1.2-V 10- \mu W NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2 ^ C (3 \sigma ) From - 70 ^ C to 125 ^ C

A 1.95 GHz Sub-1 dB NF, +40 dBm OIP3 WCDMA LNA Module

A 1-Watt Ku-band power amplifier in SiGe with 37.5% PAE

A 100 Gb/s DC-Coupled Optical Modulator Driver for 3D Photonic Electronic Wafer-Scale Packaging

A 15-mw fully integrated I/Q synthesizer for bluetooth in 0.18-μm CMOS

A 16-43 GHz low-noise amplifer with 2.5-4.0 dB noise figure

A 2.4-ghz 0.18-μm cmos self-biased cascode power amplifier

A 2.4 GHz 0.18 mu m CMOS self-biased cascode power amplifier with 23 dBm output power

A 2.4GHz 830pJ/bit duty-cycled wake-up receiver with −82dBm sensitivity for crystal-less wireless sensor nodes

A 2.5-10-gHz clock multiplier unit with 0.22-ps RMS jitter in standard 0.18-μm CMOS

A 200 [mu]A Duty-Cycled PLL for Wireless Sensor Nodes in 65 nm CMOS

A 200 μA Duty-Cycled PLL for Wireless Sensor Nodes in 65 nm CMOS

A 28/38 GHz Dual-Band Power Amplifier for 5G Communication

A 29-37 GHz BiCMOS Low-Noise Amplifier with 28.5 dB Peak Gain and 3.1-4.1 dB NF

A 30/35 GHz Dual-Band Transmitter for Phased Arrays in Communication/Radar Applications

A 30/35GHz phased array transmitter front-end with >+14dBm Psat and 10° phase/5-bit amplitude resolution for advanced beamforming

A 40GHz PLL with −92.5dBc/Hz in-band phase noise and 104fs-RMS-jitter

A 550-1050MHz +30dBm class-E power amplifier in 65nm CMOS

A 58-64 GHz Transformer-based Differential Rectifier in 40 nm CMOS with -12 dBm Sensitivity for 1 V at 64 GHz

A 65 nm CMOS 30 dBm Class-E RF Power Amplifier With 60% PAE and 40% PAE at 16 dB Back-Off

A 65 nm CMOS Inductorless Triple Band Group WiMedia UWB PHY

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