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A Simple and Accurate Pad-Thru-Short Deembedding Method Based on Systematic Analysis for RF Device Characterization

IEEE transactions on electron devices, 2015-01, Vol.62 (1), p.94-101

2015

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A Novel p-i-n Inductor for Tunable Wideband Matching Network Application

IEEE transactions on electron devices, 2013-08, Vol.60 (8), p.2611-2618

2013

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An Improved Cascade-Based Noise Deembedding Method for On-Wafer Noise Parameter Measurements

IEEE electron device letters, 2015-04, Vol.36 (4), p.291-293

2015

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Improved artificial neural network RF noise model for MOSFETs operating in avalanche region

Electronics letters, 2016-02, Vol.52 (3), p.232-234

2016

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An Improved VBIC Large-Signal Equivalent-Circuit Model for SiGe HBT With an Inductive Breakdown Network by X -Parameters

IEEE transactions on microwave theory and techniques, 2015-09, Vol.63 (9), p.2756-2763

2015

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An Improved Millimeter-Wave General Cascade De-Embedding Method for 110 GHz On-Wafer Transistor Measurements

IEEE transactions on semiconductor manufacturing, 2017-02, Vol.30 (1), p.98-104

2017

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SiGe HBT Large-Signal Table-Based Model With the Avalanche Breakdown Effect Considered

IEEE transactions on electron devices, 2015-01, Vol.62 (1), p.75-82

2015

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Investigation of RF Avalanche Inductive Effect on Reduction of Intermodulation Distortion of MOSFETs Using Volterra Series Analysis

IEEE transactions on microwave theory and techniques, 2015-02, Vol.63 (2), p.367-373

2015

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A New Method to Determine Avalanche Multiplication Factor Using Vector Network Analyzer for p-n Junctions

IEEE microwave and wireless components letters, 2014-09, Vol.24 (9), p.646-648

2014

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Radio Frequency Current-Voltage Curve Including Breakdown Effect Implemented in Large Signal Model for Validation

IEEE microwave and wireless components letters, 2014-07, Vol.24 (7), p.487-489

2014

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Temperature dependence on RF avalanche breakdown of RF mosfets in the impact ionization region

Microwave and optical technology letters, 2015-04, Vol.57 (4), p.817-820

2015

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Three-port cascade de-embedding methodology with the dangling leg effect considered for pHEMT electron trapping characterization at microwave frequency

Microwave and optical technology letters, 2014-01, Vol.56 (1), p.77-83

2014

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Direct conversion Doppler radar vital sign detection system using power management technique

Microwave and optical technology letters, 2014-09, Vol.56 (9), p.2167-2174

2014

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Noise Parameter Analysis of SiGe HBTs for Different Sizes in the Breakdown Region

Active and Passive Electronic Components, 2016-01, Vol.2016 (2016), p.164-168

2016

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Modeling Inductive Behavior of MOSFET Scattering Parameter S 22 in the Breakdown Regime

IEEE transactions on microwave theory and techniques, 2012-03, Vol.60 (3), p.502-508

2012

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Deep Neural Network RF Model for SiGe HBT in Breakdown Regime

IEEE microwave and wireless technology letters (Print), 2023-12, Vol.33 (12), p.1619-1621

2023

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Gate Length Dependence of Large-Signal Output Characteristics for the MOSFETs in the Breakdown Region Using X-Parameter Model

IEEE electron device letters, 2015-12, Vol.36 (12), p.1261-1263

2015

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MOSFET channel resistance characterization from the triode region to impact ionization region with the inductive breakdown network

Microelectronics and reliability, 2015-02, Vol.55 (3-4), p.481-485

2015

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Analysis of temperature dependence of linearity for SiGe HBTs in the avalanche region using Volterra series

Microelectronics and reliability, 2016-05, Vol.60, p.20-24

2016

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An improved large-signal model by artificial neural network for the MOSFETs operating in the breakdown region

Journal of electromagnetic waves and applications, 2017-08, Vol.31 (11-12), p.1160-1166

2017

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Large-Signal Characterization of pHEMT Under Different Load Conditions by Using X-Parameters

IEEE microwave and wireless components letters, 2016-02, Vol.26 (2), p.125-127

2016

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Theory for high Q p - n junction avalanche inductors

Applied physics letters, 2006-07, Vol.89 (1), p.013501-013501-3

2006

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Small-signal modeling for p-n junctions in the breakdown region at different temperatures using artificial neural networks

Journal of electromagnetic waves and applications, 2016-09, Vol.30 (14), p.1929-1936

2016

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Investigation of geometry dependence on MOSFET linearity in the impact ionization region using Volterra series

Microelectronics and reliability, 2015-07, Vol.55 (8), p.1163-1168

2015

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Investigation of Time-Domain Locus of SiGe HBTs in the Avalanche Region by Using the X-Parameter Measurement Under Large-Signal Drive

IEEE microwave and wireless components letters, 2017-05, Vol.27 (5), p.464-466

2017

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A Simple and Accurate Pad-Thru-Short Deembedding Method Based on Systematic Analysis for RF Device Characterization

A Novel p-i-n Inductor for Tunable Wideband Matching Network Application

An Improved Cascade-Based Noise Deembedding Method for On-Wafer Noise Parameter Measurements

Improved artificial neural network RF noise model for MOSFETs operating in avalanche region

An Improved VBIC Large-Signal Equivalent-Circuit Model for SiGe HBT With an Inductive Breakdown Network by X -Parameters

An Improved Millimeter-Wave General Cascade De-Embedding Method for 110 GHz On-Wafer Transistor Measurements

SiGe HBT Large-Signal Table-Based Model With the Avalanche Breakdown Effect Considered

Investigation of RF Avalanche Inductive Effect on Reduction of Intermodulation Distortion of MOSFETs Using Volterra Series Analysis

A New Method to Determine Avalanche Multiplication Factor Using Vector Network Analyzer for p-n Junctions

Radio Frequency Current-Voltage Curve Including Breakdown Effect Implemented in Large Signal Model for Validation

Temperature dependence on RF avalanche breakdown of RF mosfets in the impact ionization region

Three-port cascade de-embedding methodology with the dangling leg effect considered for pHEMT electron trapping characterization at microwave frequency

Direct conversion Doppler radar vital sign detection system using power management technique

Noise Parameter Analysis of SiGe HBTs for Different Sizes in the Breakdown Region

Modeling Inductive Behavior of MOSFET Scattering Parameter S 22 in the Breakdown Regime

Deep Neural Network RF Model for SiGe HBT in Breakdown Regime

Gate Length Dependence of Large-Signal Output Characteristics for the MOSFETs in the Breakdown Region Using X-Parameter Model

MOSFET channel resistance characterization from the triode region to impact ionization region with the inductive breakdown network

Analysis of temperature dependence of linearity for SiGe HBTs in the avalanche region using Volterra series

An improved large-signal model by artificial neural network for the MOSFETs operating in the breakdown region

Large-Signal Characterization of pHEMT Under Different Load Conditions by Using X-Parameters

Theory for high Q p - n junction avalanche inductors

Small-signal modeling for p-n junctions in the breakdown region at different temperatures using artificial neural networks

Investigation of geometry dependence on MOSFET linearity in the impact ionization region using Volterra series

Investigation of Time-Domain Locus of SiGe HBTs in the Avalanche Region by Using the X-Parameter Measurement Under Large-Signal Drive

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