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A 0.00043% THD+N 50W Class D Audio Amplifier GaN-Power Stage with High Frequency Residual Cancellation and Anti-Reverse Techniques

2024 IEEE European Solid-State Electronics Research Conference (ESSERC), 2024, p.65-68

2024

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A 0.18-/spl mu/m CMOS 1-Gb/s serial link transceiver by using PWM and PAM techniques

2005 IEEE International Symposium on Circuits and Systems (ISCAS), 2005, p.1150-1153 Vol. 2

2005

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A 0.18 /spl mu/m CMOS receiver for 3.1 to 10.6GHz MB-OFDM UWB communication systems

IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006, 2006, p.4 pp.-264

2006

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A 0.18um CMOS Using High-Q Active Inductors for Multi-band Low Noise Amplifier

2007 IEEE Conference on Electron Devices and Solid-State Circuits, 2007, p.1001-1004

2007

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A 0.22 nJ/b/iter 0.13 μm turbo decoder chip using inter-block permutation interleaver

2007 IEEE Custom Integrated Circuits Conference, 2007, p.273-276

2007

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Al 0.25 Ga 0.75 N/GaN enhancement-mode MOS high-electron-mobility transistors with Al 2 O 3 dielectric obtained by ozone water oxidization method

Japanese Journal of Applied Physics, 2016-04, Vol.55 (4), p.44102

2016

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A 0.325 V, 600-kHz, 40-nm 72-kb 9T Subthreshold SRAM with Aligned Boosted Write Wordline and Negative Write Bitline Write-Assist

IEEE transactions on very large scale integration (VLSI) systems, 2015-05, Vol.23 (5), p.958-962

2015

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A 0.33-V, 500-kHz, 3.94-[Formula Omitted] 40-nm 72-Kb 9T Subthreshold SRAM With Ripple Bit-Line Structure and Negative Bit-Line Write-Assist

IEEE transactions on circuits and systems. II, Express briefs, 2012-12, Vol.59 (12), p.863-867

2012

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A 0.33-V, 500-kHz, 3.94- \mu\hbox 40-nm 72-Kb 9T Subthreshold SRAM With Ripple Bit-Line Structure and Negative Bit-Line Write-Assist

IEEE transactions on circuits and systems. II, Express briefs, 2012-12, Vol.59 (12), p.863-867

2012

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A 0.35 V, 375 kHz, 5.43 mu W, 40 nm, 128 kb, symmetrical 10T subthreshold SRAM with tri-state bit-line

Microelectronics, 2016-05, Vol.51, p.89-98

2016

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A 0.35 V, 375 kHz, 5.43 µW, 40 nm, 128 kb, symmetrical 10T subthreshold SRAM with tri-state bit-line

Microelectronics, 2016-05, Vol.51, p.89-98

2016

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A 0.35V, 375kHz, 5.43µW, 40nm, 128kb, symmetrical 10T subthreshold SRAM with tri-state bit-line

Microelectronics, 2016-05, Vol.51, p.89-98

2016

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A 0.5-V 28-nm 256-kb Mini-Array Based 6T SRAM With Vtrip-Tracking Write-Assist

IEEE transactions on circuits and systems. I, Regular papers, 2017-07, Vol.64 (7), p.1791-1802

2017

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Al 0.75 Ga 0.25 N/Al x Ga 1-x N/Al 0.75 Ga 0.25 N/AlN/SiC Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.9-14

2020

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0.8 um Color Pixels with Wave-Guiding Structures for Low Optical Crosstalk Image Sensors

Electronic Imaging, 2021-01, Vol.33 (7), p.93-1-93-5

2021

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0-dB insertion loss miniaturized third-order 2.54GHz CMOS active bandpass filter

2009 Asia Pacific Microwave Conference, 2009, p.1687-1690

2009

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0061 Epidemiological study of lung inflammation and oxidative damage in indium tin oxide workers

Occupational and environmental medicine (London, England), 2014-06, Vol.71 (Suppl 1), p.A66-A66

2014

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0473 Multi-outcome of mandibular advancement device in Obstructive Sleep Apnea with different polysomnographic phenotype

Sleep (New York, N.Y.), 2023-05, Vol.46 (Supplement_1), p.A210-A210

2023

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0496 Sleep and Behavior Problems in Children with Overweight and Obesity

Sleep (New York, N.Y.), 2022-05, Vol.45 (Supplement_1), p.A220-A220

2022

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0539 The Effect Of Continuous Positive Airway Pressure Treatment On Abdominal Adiposity In Severe Obstructive Sleep Apnea: Evidence From Randomized, Active Controlled Trials

Sleep (New York, N.Y.), 2019-04, Vol.42 (Supplement_1), p.A215-A216

2019

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0826 Sleep in Parents and Children with Overweight and Obesity

Sleep (New York, N.Y.), 2024-04, Vol.47 (Supplement_1), p.A354-A354

2024

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0967 Network Analysis of Depression and Insomnia Among Pregnant Women

Sleep (New York, N.Y.), 2024-04, Vol.47 (Supplement_1), p.A415-A415

2024

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1,1′‐Bis(4‐fluorobenzyl)‐3,3′‐ethylenediimidazolium dichloride monohydrate

Acta crystallographica. Section E, Structure reports online, 2007-01, Vol.63 (1), p.o315-o316

2007

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1,1′-Bis(4-fluorobenzyl)-3,3′-ethylenediimidazolium dichloride monohydrate

Acta crystallographica. Section E, Structure reports online, 2007-01, Vol.63 (1), p.o315-o316

2007

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The (1|1)-Centroid Problem in the Plane with Distance Constraints

International journal of computational geometry & applications, 2018-06, Vol.28 (2), p.81-109

2018

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A 0.00043% THD+N 50W Class D Audio Amplifier GaN-Power Stage with High Frequency Residual Cancellation and Anti-Reverse Techniques

A 0.18-/spl mu/m CMOS 1-Gb/s serial link transceiver by using PWM and PAM techniques

A 0.18 /spl mu/m CMOS receiver for 3.1 to 10.6GHz MB-OFDM UWB communication systems

A 0.18um CMOS Using High-Q Active Inductors for Multi-band Low Noise Amplifier

A 0.22 nJ/b/iter 0.13 μm turbo decoder chip using inter-block permutation interleaver

Al 0.25 Ga 0.75 N/GaN enhancement-mode MOS high-electron-mobility transistors with Al 2 O 3 dielectric obtained by ozone water oxidization method

A 0.325 V, 600-kHz, 40-nm 72-kb 9T Subthreshold SRAM with Aligned Boosted Write Wordline and Negative Write Bitline Write-Assist

A 0.33-V, 500-kHz, 3.94-[Formula Omitted] 40-nm 72-Kb 9T Subthreshold SRAM With Ripple Bit-Line Structure and Negative Bit-Line Write-Assist

A 0.33-V, 500-kHz, 3.94- \mu\hbox 40-nm 72-Kb 9T Subthreshold SRAM With Ripple Bit-Line Structure and Negative Bit-Line Write-Assist

A 0.35 V, 375 kHz, 5.43 mu W, 40 nm, 128 kb, symmetrical 10T subthreshold SRAM with tri-state bit-line

A 0.35 V, 375 kHz, 5.43 µW, 40 nm, 128 kb, symmetrical 10T subthreshold SRAM with tri-state bit-line

A 0.35V, 375kHz, 5.43µW, 40nm, 128kb, symmetrical 10T subthreshold SRAM with tri-state bit-line

A 0.5-V 28-nm 256-kb Mini-Array Based 6T SRAM With Vtrip-Tracking Write-Assist

Al 0.75 Ga 0.25 N/Al x Ga 1-x N/Al 0.75 Ga 0.25 N/AlN/SiC Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

0.8 um Color Pixels with Wave-Guiding Structures for Low Optical Crosstalk Image Sensors

0-dB insertion loss miniaturized third-order 2.54GHz CMOS active bandpass filter

0061 Epidemiological study of lung inflammation and oxidative damage in indium tin oxide workers

0473 Multi-outcome of mandibular advancement device in Obstructive Sleep Apnea with different polysomnographic phenotype

0496 Sleep and Behavior Problems in Children with Overweight and Obesity

0539 The Effect Of Continuous Positive Airway Pressure Treatment On Abdominal Adiposity In Severe Obstructive Sleep Apnea: Evidence From Randomized, Active Controlled Trials

0826 Sleep in Parents and Children with Overweight and Obesity

0967 Network Analysis of Depression and Insomnia Among Pregnant Women

1,1′‐Bis(4‐fluorobenzyl)‐3,3′‐ethylenediimidazolium dichloride monohydrate

1,1′-Bis(4-fluorobenzyl)-3,3′-ethylenediimidazolium dichloride monohydrate

The (1|1)-Centroid Problem in the Plane with Distance Constraints

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