UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 80

Sortiert nach

Fabrication, Characterization, and Physical Analysis of AlGaN/GaN HEMTs on Flexible Substrates

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1054-1059

2013

Volltextzugriff (PDF)

InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz

IEEE electron device letters, 2011-11, Vol.32 (11), p.1537-1539

2011

Volltextzugriff (PDF)

435mS/mm transconductance for AlGaN/ GaN HEMTs on HR-Si substrate with optimised gate-source spacing

Electronics letters, 2012-01, Vol.48 (2), p.69-71

2012

Volltextzugriff (PDF)

RF performance of InAlN/AlN/GaN HEMTs on sapphire substrate

Electronics letters, 2011-02, Vol.47 (3), p.212-214

2011

Volltextzugriff (PDF)

The effect of gate length variation on InAlGaN GaN HFET device characteristics

Semiconductor science and technology, 2012-03, Vol.27 (3), p.35009-1-4

2012

Volltextzugriff (PDF)

Optimization of Al0.29Ga0.71N/GaN high electron mobility heterostructures for high-power/frequency performances

IEEE transactions on electron devices, 2013, Vol.60, p.3105-3111

2013

Volltextzugriff (PDF)

High transconductance AlGaN/GaN HEMT with thin barrier on Si(111) substrate

2010 Proceedings of the European Solid State Device Research Conference, 2010, p.281-284

2010

Volltextzugriff (PDF)

435mS/mm transconductance for AlGaN/GaN HEMTs on HR-Si substrate with optimised gate-source spacing

Electronics letters, 2012-01, Vol.48 (2), p.1-1

2012

Volltextzugriff (PDF)

Polarization Engineering of Al(Ga)N/GaN HEMT Structures for Microwave High Power Applications

Materials science forum, 2014-10, Vol.806, p.81-87

2014

Volltextzugriff (PDF)

RF performance of InAlN/AlN/GaN HEMTs on sapphire substrate

Electronics letters, 2011-02, Vol.47 (3), p.1-1

2011

Volltextzugriff (PDF)

Gewölbe: Systematisches Fachwörterbuch

R. Lecourt, K. Lodge, E. Anderson, E. Troll-Kraft, T. Gebhardt, F. Hart, W. Meyer, S. Muthesius, H. Reuther / R. Lecourt, K. Lodge, E. Anderson, E. Troll-Kraft, T. Gebhardt, F. Hart, W. Meyer, S. Muthesius, H. Reuther

2011

Volltextzugriff (PDF)

An Advanced Ageing Methodology for Robustness Assessment of Normally-off AlGaN/GaN HEMT

2020 15th European Microwave Integrated Circuits Conference (EuMIC), 2021, p.237-240

2021

Volltextzugriff (PDF)

AlGaN/GaN HEMT on Si (111) substrate for millimeter microwave power applications

The Eighth International Conference on Advanced Semiconductor Devices and Microsystems, 2010, p.111-114

2010

Volltextzugriff (PDF)

Analysis of AlGaN/GaN epi-material on resistive Si(111) substrate for MMIC applications in millimeter wave range

The 5th European Microwave Integrated Circuits Conference, 2010, p.33-36

2010

Volltextzugriff (PDF)

75-nm-T-shaped-gate InAlN/AlN/GaN HEMT on sapphire with 100 GHz cutoff frequency

2011 6th European Microwave Integrated Circuit Conference, 2011, p.136-139

2011

Volltextzugriff (PDF)

Interprétation de cartes géographiques : Algorithmes de reconstruction des réseaux hydrographiques et routiers

Traitement du signal, 1997, Vol.14 (3), p.317-335

1997

Volltextzugriff (PDF)

HIV seroprevalence and risk factors among female inmates in a French prison

Journal of acquired immune deficiency syndromes (1988), 1992, Vol.5 (4), p.428-429

1992

Volltextzugriff (PDF)

GCC Sovereign Wealth Funds: Why do they take control?

Journal of international financial markets, institutions & money, 2022-03, Vol.77, p.101494, Article 101494

2022

Volltextzugriff (PDF)

Association of antibodies against myelin and neuronal antigens with neuroinflammation in systemic lupus erythematosus

Rheumatology (Oxford, England), 2019-05, Vol.58 (5), p.908-913

2019

Volltextzugriff (PDF)

Effect of music therapy on anxiety and depression in patients with Alzheimer's type dementia: randomised, controlled study

Dementia and geriatric cognitive disorders, 2009-08, Vol.28 (1), p.36

2009

Volltextzugriff (PDF)

Ursolic Acid Inhibits Collective Cell Migration and Promotes JNK-Dependent Lysosomal Associated Cell Death in Glioblastoma Multiforme Cells

Pharmaceuticals (Basel, Switzerland), 2021-01, Vol.14 (2), p.91

2021

Volltextzugriff (PDF)

Phenotypical and functional characteristics of in vitro expanded bone marrow mesenchymal stem cells from patients with systemic sclerosis

Annals of the rheumatic diseases, 2008-04, Vol.67 (4), p.443-449

2008

Volltextzugriff (PDF)

Eulerian and Lagrangian spray simulations of an aeronautical multipoint injector

Proceedings of the Combustion Institute, 2011, Vol.33 (2), p.2099-2107

2011

Volltextzugriff (PDF)

1198P Anti-ALK autoantibodies in patients with ALK positive non-small cell lung cancer (NSCLC)

Annals of oncology, 2021-09, Vol.32, p.S956-S957

2021

Volltextzugriff (PDF)

Manganite-based three level memristive devices with self-healing capability

Physics letters. A, 2016-08, Vol.380 (36), p.2870-2875

2016

Volltextzugriff (PDF)

1 – 25 von 80

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(45)
Mit Volltextzugriff
(70)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(28)
Architecture
(18)
Technology
(15)
Physical Sciences
(13)
Engineering
(12)
Physics
(12)
Exact Sciences And Technology
(9)
Life Sciences & Biomedicine
(9)
Engineering, Electrical & Electronic
(8)
Humans
(8)
Applied Sciences
(7)
Female
(7)
Gallium Nitride
(7)
Aluminum Gallium Nitride
(6)
Hemts
(6)
Adult
(5)
Logic Gates
(5)
Male
(5)
Optics
(5)
Substrates
(5)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Fabrication, Characterization, and Physical Analysis of AlGaN/GaN HEMTs on Flexible Substrates

InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz

435mS/mm transconductance for AlGaN/ GaN HEMTs on HR-Si substrate with optimised gate-source spacing

RF performance of InAlN/AlN/GaN HEMTs on sapphire substrate

The effect of gate length variation on InAlGaN GaN HFET device characteristics

Optimization of Al0.29Ga0.71N/GaN high electron mobility heterostructures for high-power/frequency performances

High transconductance AlGaN/GaN HEMT with thin barrier on Si(111) substrate

435mS/mm transconductance for AlGaN/GaN HEMTs on HR-Si substrate with optimised gate-source spacing

Polarization Engineering of Al(Ga)N/GaN HEMT Structures for Microwave High Power Applications

RF performance of InAlN/AlN/GaN HEMTs on sapphire substrate

Gewölbe: Systematisches Fachwörterbuch

An Advanced Ageing Methodology for Robustness Assessment of Normally-off AlGaN/GaN HEMT

AlGaN/GaN HEMT on Si (111) substrate for millimeter microwave power applications

Analysis of AlGaN/GaN epi-material on resistive Si(111) substrate for MMIC applications in millimeter wave range

75-nm-T-shaped-gate InAlN/AlN/GaN HEMT on sapphire with 100 GHz cutoff frequency

Interprétation de cartes géographiques : Algorithmes de reconstruction des réseaux hydrographiques et routiers

HIV seroprevalence and risk factors among female inmates in a French prison

GCC Sovereign Wealth Funds: Why do they take control?

Association of antibodies against myelin and neuronal antigens with neuroinflammation in systemic lupus erythematosus

Effect of music therapy on anxiety and depression in patients with Alzheimer's type dementia: randomised, controlled study

Ursolic Acid Inhibits Collective Cell Migration and Promotes JNK-Dependent Lysosomal Associated Cell Death in Glioblastoma Multiforme Cells

Phenotypical and functional characteristics of in vitro expanded bone marrow mesenchymal stem cells from patients with systemic sclerosis

Eulerian and Lagrangian spray simulations of an aeronautical multipoint injector

1198P Anti-ALK autoantibodies in patients with ALK positive non-small cell lung cancer (NSCLC)

Manganite-based three level memristive devices with self-healing capability

Suchergebnisse filtern