UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Statistical models for estimating the measurement of pitch in metrology instruments

Metrologia, 1997-12, Vol.34 (6), p.467-477

1997

Volltextzugriff (PDF)

Image sharpness measurement in the scanning electron microscope-Part III

Scanning, 1999-07, Vol.21 (4), p.246-252

1999

Volltextzugriff (PDF)

AC Impedance Method for High‐Resistivity Measurements of Silicon

Journal of the Electrochemical Society, 1991-10, Vol.138 (10), p.3081-3085

1991

Volltextzugriff (PDF)

A new approach to accurate X-ray mask measurements in a scanning electron microscope

IEEE transactions on electron devices, 1989-11, Vol.36 (11), p.2452-2457

1989

Volltextzugriff (PDF)

Precision, accuracy, uncertainty and traceability and their application to submicrometer dimensional metrology

Solid State Electronics, 1993-05, Vol.36 (5), p.673-684

1993

Volltextzugriff (PDF)

Conditions Existing at the Onset of Oscillistor Action

Journal of applied physics, 1963-04, Vol.34 (4), p.880-890

Larrabee, R. D.

1963

Volltextzugriff (PDF)

Discussion of “ Decision Analysis Approach to Offshore Platform Design ” by Robert G. Bea, S. T. Hong, and James S. Mitchell (January, 1984)

Journal of structural engineering (New York, N.Y.), 1985-01, Vol.111 (1), p.234-235

Larrabee, R. D.

1985

Volltextzugriff (PDF)

X-Ray lithography mask metrology: use of transmitted electrons in an SEM for linewidth measurement

Journal of research of the National Institute of Standards and Technology, 1993-07, Vol.98 (4), p.415-445

1993

Volltextzugriff (PDF)

The Oscillistor—New Type of Semiconductor Oscillator

Journal of applied physics, 1960-09, Vol.31 (9), p.1519-1523

1960

Volltextzugriff (PDF)

RESONANCE BEHAVIOR OF THE DIELECTRIC CONSTANT OF GaAs AT MICROWAVE FREQUENCIES

Applied physics letters, 1967-06, Vol.10 (12), p.334-336

1967

Volltextzugriff (PDF)

A rapid evaluation technique for functional Gunn diodes

IEEE transactions on electron devices, 1970-04, Vol.17 (4), p.271-274

1970

Volltextzugriff (PDF)

Interpretation of Hall Measurements

Journal of the Electrochemical Society, 1980-01, Vol.127 (7), p.1640-1643

Larrabee, R. D.

1980

Volltextzugriff (PDF)

Theory and application of a nondestructive photovoltaic technique for the measurement of resistivity variations in circular semiconductor slices

Solid-state electronics, 1980-10, Vol.23 (10), p.1059-1068

1980

Volltextzugriff (PDF)

The relationship between accelerating voltage and electron detection modes to linewidth measurement in an SEM

Scanning, 1988, Vol.10 (1), p.10-18

1988

Volltextzugriff (PDF)

Spectral density-based statistical measures for image sharpness

Metrologia, 2005-10, Vol.42 (5), p.351-359

2005

Volltextzugriff (PDF)

Submicrometer linewidth metrology in the optical microscope

Journal of research of the National Bureau of Standards (1977), 1987-05, Vol.92 (3), p.187-204

1987

Volltextzugriff (PDF)

Theory and Application of a Minority Carrier Sweep-Out Effect

Journal of applied physics, 1959-01, Vol.30 (10), p.1535-1538

Larrabee, R. D.

1959

Volltextzugriff (PDF)

Characteristics of Waveguides with a Semiconductor Side Wall

IEEE transactions on microwave theory and techniques, 1966-07, Vol.14 (7), p.306-310

Larrabee, R.D.

1966

Volltextzugriff (PDF)

High-Field Effect in Boron-Doped Silicon

Physical review, 1959-01, Vol.116 (2), p.300-301

Larrabee, R. D.

1959

Volltextzugriff (PDF)

Current oscillations and microwave emission in indium antimonide

IEEE transactions on electron devices, 1966-01, Vol.ED-13 (1), p.121-131

1966

Volltextzugriff (PDF)

Specimen biasing to enhance or suppress secondary electron emission from charging specimens at low accelerating voltages

Scanning, 1989, Vol.11 (3), p.111-121

1989

Volltextzugriff (PDF)

FACIAL PLASTIC AND RECONSTRUCTIVE SURGERY 3RD EDN

Journal of laryngology and otology, 2009-12, Vol.123 (12), p.1407

2009

Volltextzugriff (PDF)

Theory and application of a two-layer Hall technique

IEEE transactions on electron devices, 1980-01, Vol.27 (1), p.32-36

1980

Volltextzugriff (PDF)

The use of Fick's law in modeling diffusion processes

IEEE transactions on electron devices, 1980-09, Vol.27 (9), p.1795-1798

1980

Volltextzugriff (PDF)

Current-Voltage Characteristics of Forward Biased Long p − i − n Structures

Physical review, 1961-01, Vol.121 (1), p.37-39

Larrabee, R. D.

1961

Volltextzugriff (PDF)

1 – 25 von 191

Menü

Weitere Dienste

Einstellungen

Statistical models for estimating the measurement of pitch in metrology instruments

Image sharpness measurement in the scanning electron microscope-Part III

AC Impedance Method for High‐Resistivity Measurements of Silicon

A new approach to accurate X-ray mask measurements in a scanning electron microscope

Precision, accuracy, uncertainty and traceability and their application to submicrometer dimensional metrology

Conditions Existing at the Onset of Oscillistor Action

Discussion of “ Decision Analysis Approach to Offshore Platform Design ” by Robert G. Bea, S. T. Hong, and James S. Mitchell (January, 1984)

X-Ray lithography mask metrology: use of transmitted electrons in an SEM for linewidth measurement

The Oscillistor—New Type of Semiconductor Oscillator

RESONANCE BEHAVIOR OF THE DIELECTRIC CONSTANT OF GaAs AT MICROWAVE FREQUENCIES

A rapid evaluation technique for functional Gunn diodes

Interpretation of Hall Measurements

Theory and application of a nondestructive photovoltaic technique for the measurement of resistivity variations in circular semiconductor slices

The relationship between accelerating voltage and electron detection modes to linewidth measurement in an SEM

Spectral density-based statistical measures for image sharpness

Submicrometer linewidth metrology in the optical microscope

Theory and Application of a Minority Carrier Sweep-Out Effect

Characteristics of Waveguides with a Semiconductor Side Wall

High-Field Effect in Boron-Doped Silicon

Current oscillations and microwave emission in indium antimonide

Specimen biasing to enhance or suppress secondary electron emission from charging specimens at low accelerating voltages

FACIAL PLASTIC AND RECONSTRUCTIVE SURGERY 3RD EDN

Theory and application of a two-layer Hall technique

The use of Fick's law in modeling diffusion processes

Current-Voltage Characteristics of Forward Biased Long p − i − n Structures

Suchergebnisse filtern