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Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias Testing

IEEE electron device letters, 2009-05, Vol.30 (5), p.427-429

2009

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Hyperacute stroke: ultrafast MR imaging to triage patients prior to therapy

Radiology, 1999-08, Vol.212 (2), p.325

1999

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Electro-thermal characterization of AlGaN/GaN HEMT on Silicon Microstrip Technology

Microelectronics and reliability, 2011-09, Vol.51 (9-11), p.1725-1729

2011

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Minimum ionizing and alpha particles detectors based on epitaxial semiconductor silicon carbide

IEEE transactions on nuclear science, 2004-02, Vol.51 (1), p.238-244

2004

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Influence of lateral and in-depth metal segregation on the patterning of ohmic contacts for GaN-based devices

Journal of physics. D, Applied physics, 2014-05, Vol.47 (18), p.1-10

2014

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Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1461-1465

2013

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Effect of heavy proton and neutron irradiations on epitaxial 4H-SiC Schottky diodes

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2005-10, Vol.552 (1), p.138-145

2005

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Possibility of Subelectron Noise With Room-Temperature Silicon Carbide Pixel Detectors

IEEE transactions on nuclear science, 2006-08, Vol.53 (4), p.2421-2427

2006

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Investigation of Ni/4H-SiC diodes as radiation detectors with low doped n-type 4H-SiC epilayers

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2003-09, Vol.510 (3), p.273-280

2003

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Field plate related reliability improvements in GaN-on-Si HEMTs

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.2153-2158

2012

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SiC detectors for neutron monitoring

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2005-10, Vol.552 (1), p.131-137

2005

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Epitaxial silicon carbide charge particle detectors

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 1999-11, Vol.437 (2), p.354-358

1999

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Experimental validation of GaN HEMTs thermal management by using photocurrent measurements

IEEE transactions on electron devices, 2006-02, Vol.53 (2), p.182-188

2006

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Radiation tolerance of epitaxial silicon carbide detectors for electrons and γ-rays

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2003-11, Vol.514 (1-3), p.126-134

2003

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