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A 3-5 GHz Frequency-Tunable Receiver Frontend for Multiband Applications

IEEE microwave and wireless components letters, 2008-09, Vol.18 (9), p.638-640

2008

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An Image-Band-Rejection Technique for Error Detection of On-Chip Quadrature Phases

IEEE transactions on microwave theory and techniques, 2008-10, Vol.56 (10), p.2173-2179

2008

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A 40nm 4-downlink and 2-uplink RF Transceiver Supporting LTE-Advanced Carrier Aggregation

2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2018, p.316-319

2018

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An Experimental Ultra-Low-Voltage Demodulator in 0.18-[Formula Omitted]m CMOS

IEEE transactions on microwave theory and techniques, 2009-10, Vol.57 (10), p.2307

2009

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An Experimental Ultra-Low-Voltage Demodulator in 0.18- \mu m CMOS

IEEE transactions on microwave theory and techniques, 2009-10, Vol.57 (10), p.2307-2317

2009

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A 65-nm GSM/GPRS/EDGE SoC With Integrated BT/FM

IEEE journal of solid-state circuits, 2013-05, Vol.48 (5), p.1161-1173

2013

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A HSPA+/WCDMA/EDGE 40nm Modem SoC with embedded RF transceiver supporting RX diversity

2014 IEEE Radio Frequency Integrated Circuits Symposium, 2014, p.133-136

2014

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A 65nm GSM/GPRS/EDGE SoC with Integrated BT/FM

2012 IEEE Radio Frequency Integrated Circuits Symposium, 2012, p.403-406

2012

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A 3a5 GHz Frequency-Tunable Receiver Frontend for Multiband Applications

IEEE microwave and wireless components letters, 2008-01, Vol.18 (9)

2008

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Visual Object Recognition and Pose Estimation Based on a Deep Semantic Segmentation Network

IEEE sensors journal, 2018-11, Vol.18 (22), p.9370-9381

2018

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Depression in dementia with Lewy bodies: A comparison with Alzheimer's disease

PloS one, 2017-06, Vol.12 (6), p.e0179399-e0179399

2017

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Thermally Robust Perpendicular SOT-MTJ Memory Cells With STT-Assisted Field-Free Switching

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6623-6628

2021

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Damage-Free ALD Blocking Oxide Layer on Functionalized Graphene Nanosheets as Nonvolatile Memories

IEEE transactions on electron devices, 2019-02, Vol.66 (2), p.1113-1117

2019

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Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS2 Channel Directly Grown on SiO } /Si Substrates Using Area-Selective CVD Technology

IEEE transactions on electron devices, 2019-12, Vol.66 (12), p.5381-5386

2019

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Enhanced N2 affinity of 1T-MoS2 with a unique pseudo-six-membered ring consisting of N–Li–S–Mo–S–Mo for high ambient ammonia electrosynthesis performance

Journal of materials chemistry. A, Materials for energy and sustainability, 2021-01, Vol.9 (2), p.1230-1239

2021

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Sub-60mV-swing negative-capacitance FinFET without hysteresis

2015 IEEE International Electron Devices Meeting (IEDM), 2015, p.22.6.1-22.6.4

2015

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Study of sub-5 nm RRAM, tunneling selector and selector less device

2015 IEEE International Symposium on Circuits and Systems (ISCAS), 2015, p.385-388

2015

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Utilizing Sub-5 nm sidewall electrode technology for atomic-scale resistive memory fabrication

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014, p.1-2

2014

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First demonstration of 40-nm channel length top-gate WS2 pFET using channel area-selective CVD growth directly on SiOx/Si substrate

2019 Symposium on VLSI Technology, 2019, p.T244-T245

2019

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Demonstration of PtMn-based Field-free Switching SOT MRAM

2023 IEEE International Magnetic Conference - Short Papers (INTERMAG Short Papers), 2023, p.1-2

2023

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Divide-by-5 Injection-Locked Frequency Divider Using Assisted Low-modulus Injection Technique

2020 27th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2020, p.1-4

2020

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Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft

2018 IEEE International Electron Devices Meeting (IEDM), 2018, p.31.7.1-31.7.4

2018

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Enhanced N affinity of 1T-MoS with a unique pseudo-six-membered ring consisting of N-Li-S-Mo-S-Mo for high ambient ammonia electrosynthesis performance

Journal of materials chemistry. A, Materials for energy and sustainability, 2021-01, Vol.9 (2), p.123-1239

2021

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Enhanced N 2 affinity of 1T-MoS 2 with a unique pseudo-six-membered ring consisting of N–Li–S–Mo–S–Mo for high ambient ammonia electrosynthesis performance

Journal of materials chemistry. A, Materials for energy and sustainability, 2021-01, Vol.9 (2), p.1230-1239

2021

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First BEOL-compatible, 10 ns-fast, and Durable 55 nm Top-pSOT-MRAM with High TMR (>130%)

2023 International Electron Devices Meeting (IEDM), 2023, p.1-4

2023

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A 3-5 GHz Frequency-Tunable Receiver Frontend for Multiband Applications

An Image-Band-Rejection Technique for Error Detection of On-Chip Quadrature Phases

A 40nm 4-downlink and 2-uplink RF Transceiver Supporting LTE-Advanced Carrier Aggregation

An Experimental Ultra-Low-Voltage Demodulator in 0.18-[Formula Omitted]m CMOS

An Experimental Ultra-Low-Voltage Demodulator in 0.18- \mu m CMOS

A 65-nm GSM/GPRS/EDGE SoC With Integrated BT/FM

A HSPA+/WCDMA/EDGE 40nm Modem SoC with embedded RF transceiver supporting RX diversity

A 65nm GSM/GPRS/EDGE SoC with Integrated BT/FM

A 3a5 GHz Frequency-Tunable Receiver Frontend for Multiband Applications

Visual Object Recognition and Pose Estimation Based on a Deep Semantic Segmentation Network

Depression in dementia with Lewy bodies: A comparison with Alzheimer's disease

Thermally Robust Perpendicular SOT-MTJ Memory Cells With STT-Assisted Field-Free Switching

Damage-Free ALD Blocking Oxide Layer on Functionalized Graphene Nanosheets as Nonvolatile Memories

Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS2 Channel Directly Grown on SiO } /Si Substrates Using Area-Selective CVD Technology

Enhanced N2 affinity of 1T-MoS2 with a unique pseudo-six-membered ring consisting of N–Li–S–Mo–S–Mo for high ambient ammonia electrosynthesis performance

Sub-60mV-swing negative-capacitance FinFET without hysteresis

Study of sub-5 nm RRAM, tunneling selector and selector less device

Utilizing Sub-5 nm sidewall electrode technology for atomic-scale resistive memory fabrication

First demonstration of 40-nm channel length top-gate WS2 pFET using channel area-selective CVD growth directly on SiOx/Si substrate

Demonstration of PtMn-based Field-free Switching SOT MRAM

Divide-by-5 Injection-Locked Frequency Divider Using Assisted Low-modulus Injection Technique

Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft

Enhanced N affinity of 1T-MoS with a unique pseudo-six-membered ring consisting of N-Li-S-Mo-S-Mo for high ambient ammonia electrosynthesis performance

Enhanced N 2 affinity of 1T-MoS 2 with a unique pseudo-six-membered ring consisting of N–Li–S–Mo–S–Mo for high ambient ammonia electrosynthesis performance

First BEOL-compatible, 10 ns-fast, and Durable 55 nm Top-pSOT-MRAM with High TMR (>130%)

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