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Hydroxyethyl cellulose-grafted loofa sponge-based metal affinity adsorbents for protein purification and enzyme immobilization

Process biochemistry (1991), 2018-11, Vol.74, p.141-147

2018

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A Fully Integrated 16-Element Phased-Array Transmitter in SiGe BiCMOS for 60-GHz Communications

IEEE journal of solid-state circuits, 2010-12, Vol.45 (12), p.2757-2773

2010

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Design of variable gain amplifier with gain-bandwidth product up to 354 GHz implemented in InP-InGaAs DHBT technology

IEEE transactions on microwave theory and techniques, 2006-02, Vol.54 (2), p.599-607

2006

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A World-Band Triple-Mode 802.11a/b/g SOC in 130-nm CMOS

IEEE journal of solid-state circuits, 2009-11, Vol.44 (11), p.2911-2921

2009

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A 1V 17.9dBm 60GHz power amplifier in standard 65nm CMOS

2010 IEEE International Solid-State Circuits Conference - (ISSCC), 2010, p.424-425

2010

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InP∕InGaAs SHBTs with 75 nm collector and fT>500 GHz

Electronics letters, 2003-10, Vol.39 (20), p.1475

2003

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Submicron InP-InGaAs single heterojunction bipolar transistors with fT of 377 GHz

IEEE electron device letters, 2003-05, Vol.24 (5), p.292-294

2003

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A SiGe BiCMOS 16-element phased-array transmitter for 60GHz communications

2010 IEEE International Solid-State Circuits Conference - (ISSCC), 2010, p.218-219

2010

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Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mA

IEEE electron device letters, 2003-07, Vol.24 (7), p.427-429

2003

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Opportunity and Challenge of Chiplet-Based HPC and AIoT

2021 International Symposium on VLSI Design, Automation and Test (VLSI-DAT), 2021, p.1-2

Lai, Jie-Wei

2021

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Carrier diffusion effect in tapered semiconductor-laser amplifier

IEEE journal of quantum electronics, 1998-07, Vol.34 (7), p.1247-1256

1998

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Vertical scaling of 0.25-μm emitter InP/InGaAs single heterojunction bipolar transistors with fT of 452 GHz

IEEE electron device letters, 2003-07, Vol.24 (7), p.436-438

2003

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A 4-in-1 (WiFi/BT/FM/GPS) connectivity SoC with enhanced co-existence performance in 65nm CMOS

2012 IEEE International Solid-State Circuits Conference, 2012, p.172-174

2012

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A visualization tool for observing metaheuristic algorithm: Epanel

2017 IEEE International Conference on Systems, Man, and Cybernetics (SMC), 2017, p.2826-2831

2017

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Experimental evidence of nonuniform carrier distribution in multiple-quantum-well laser diodes

Electronics letters, 1998-06, Vol.34 (12), p.1230

1998

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Over 500 GHz InP heterojunction bipolar transistors

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004, 2004, p.653-658

2004

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Knowledge as a Predictor for Preparedness in Managing COVID-19 Among General Practitioners in Malaysia

Curēus (Palo Alto, CA), 2024-06

2024

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An initial edge point selection and segmental contour following for object contour extraction

2010 11th International Conference on Control Automation Robotics & Vision, 2010, p.1632-1637

2010

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Design of variable gain amplifier with gain-bandwidth product up to 354 GHz implemented in InP-InGaAs DGBT technology

IEEE transactions on microwave theory and techniques, 2006, Vol.54 (2), p.599-607

2006

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InP/InGaAs SHBTs with 75 nm collector and f^sub T^ > 500 GHz

Electronics letters, 2003-10, Vol.39 (20), p.1

2003

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InP/InGaAs SHBTs with 75 nm collector and f sub( T) > 500 GHz

Electronics letters, 2003-10, Vol.39 (20), p.1-1

2003

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Vertical scaling of 0.25-mum emitter InP/InGaAs single heterojunction bipolar transistors with f/T/ of 452 GHz

IEEE electron device letters, 2003-07, Vol.24 (7), p.436-438

2003

Volltextzugriff (PDF)

Vertical scaling of 0.25-μm emitter InP/InGaAs single heterojunction bipolar transistors with f T of 452 GHz

IEEE electron device letters, 2003-07, Vol.24 (7), p.436-438

2003

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Vertical scaling of 0.25-[micro]m emitter InP/InGaAs single heterojunction bipolar transistors with fT of 452 GHz

IEEE electron device letters, 2003-07, Vol.24 (7), p.436

2003

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A world-band triple-mode 802.11a/b/g SOC in 0.13um CMOS

2008 IEEE Asian Solid-State Circuits Conference, 2008, p.337-340

2008

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Hydroxyethyl cellulose-grafted loofa sponge-based metal affinity adsorbents for protein purification and enzyme immobilization

A Fully Integrated 16-Element Phased-Array Transmitter in SiGe BiCMOS for 60-GHz Communications

Design of variable gain amplifier with gain-bandwidth product up to 354 GHz implemented in InP-InGaAs DHBT technology

A World-Band Triple-Mode 802.11a/b/g SOC in 130-nm CMOS

A 1V 17.9dBm 60GHz power amplifier in standard 65nm CMOS

InP∕InGaAs SHBTs with 75 nm collector and fT>500 GHz

Submicron InP-InGaAs single heterojunction bipolar transistors with fT of 377 GHz

A SiGe BiCMOS 16-element phased-array transmitter for 60GHz communications

Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mA

Opportunity and Challenge of Chiplet-Based HPC and AIoT

Carrier diffusion effect in tapered semiconductor-laser amplifier

Vertical scaling of 0.25-μm emitter InP/InGaAs single heterojunction bipolar transistors with fT of 452 GHz

A 4-in-1 (WiFi/BT/FM/GPS) connectivity SoC with enhanced co-existence performance in 65nm CMOS

A visualization tool for observing metaheuristic algorithm: Epanel

Experimental evidence of nonuniform carrier distribution in multiple-quantum-well laser diodes

Over 500 GHz InP heterojunction bipolar transistors

Knowledge as a Predictor for Preparedness in Managing COVID-19 Among General Practitioners in Malaysia

An initial edge point selection and segmental contour following for object contour extraction

Design of variable gain amplifier with gain-bandwidth product up to 354 GHz implemented in InP-InGaAs DGBT technology

InP/InGaAs SHBTs with 75 nm collector and f^sub T^ > 500 GHz

InP/InGaAs SHBTs with 75 nm collector and f sub( T) > 500 GHz

Vertical scaling of 0.25-mum emitter InP/InGaAs single heterojunction bipolar transistors with f/T/ of 452 GHz

Vertical scaling of 0.25-μm emitter InP/InGaAs single heterojunction bipolar transistors with f T of 452 GHz

Vertical scaling of 0.25-[micro]m emitter InP/InGaAs single heterojunction bipolar transistors with fT of 452 GHz

A world-band triple-mode 802.11a/b/g SOC in 0.13um CMOS

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