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Transport properties of SiO2/AlInN/AlN/GaN metal-oxide-semiconductor high electron mobility transistors on SiC substrate

Journal of physics. D, Applied physics, 2014-04, Vol.47 (13)

2014

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Efficient prediction of terahertz quantum cascade laser dynamics from steady-state simulations

Applied physics letters, 2015-04, Vol.106 (16)

2015

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Terahertz inverse synthetic aperture radar imaging using self-mixing interferometry with a quantum cascade laser

Optics letters, 2014-05, Vol.39 (9), p.2629

2014

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MOCVD growth of semipolar AlxGa1−xN on m-plane sapphire for applications in deep-ultraviolet light emitters

Physica status solidi. A, Applications and materials science, 2011-12, Vol.208 (12), p.2724-2729

2011

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Large periphery AlInN AlN GaN metal-oxide-semiconductor heterostructure field-effect transistors on sapphire substrate

Semiconductor science and technology, 2014-11, Vol.29 (11), p.115031

2014

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Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2 gate dielectric

Semiconductor science and technology, 2012-12, Vol.27 (12)

2012

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Enhancement of light extraction efficiency in sub-300 nm nitride thin-film flip-chip light-emitting diodes

Solid-state electronics, 2013-11, Vol.89, p.156-160

2013

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Terahertz vibrational absorption spectroscopy using microstrip-line waveguides

Applied physics letters, 2008-11, Vol.93 (18), p.182904-182904-3

2008

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Quasi-pseudomorphic AlGaN based deep ultraviolet LEDs over sapphire substrates

2015 IEEE Summer Topicals Meeting Series (SUM), 2015, p.5-6

2015

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Terahertz radar cross-section characterisation using laser feedback interferometry with quantum cascade laser

Electronics letters, 2015-10, Vol.51 (22), p.1774-1776

2015

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Optical probe of InAs/GaAs self-assembled quantum dots grown using low growth rate and growth interruptions

Applied surface science, 2008-03, Vol.254 (11), p.3385-3390

2008

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Terahertz evanescent field microscopy of dielectric materials using on-chip waveguides

Applied physics letters, 2008-01, Vol.92 (3)

2008

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Generation of Bessel beams using a terahertz quantum cascade laser

Optics letters, 2009-04, Vol.34 (7), p.1030

2009

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Measurement and analysis of the diffuse reflectance of powdered samples at terahertz frequencies using a quantum cascade laser

The Journal of chemical physics, 2011-04, Vol.134 (13), p.134304-134304-8

2011

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Effect of silicon doping on the optical and transport properties of InGaN/GaN multiple-quantum-well structures

Applied physics letters, 2000-03, Vol.76 (13), p.1737-1739

2000

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Optical investigation of InGaN/GaN multiple quantum wells

Applied physics letters, 1999-05, Vol.74 (21), p.3128-3130

1999

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MBE growth and transport properties of silicon δ-doped GaAs/AlAs quantum well structures for terahertz frequency detection

Journal of crystal growth, 2010-05, Vol.312 (10), p.1761-1765

2010

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Effect of reactive ion etching on the yellow luminescence of GaN

Applied physics letters, 1999-12, Vol.75 (23), p.3710-3712

1999

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Study on the properties of CuInSe2 ingots grown from the melt using stoichiometric and non-stoichiometric charges

Journal of crystal growth, 2005-07, Vol.280 (3-4), p.474-482

2005

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MOCVD growth of device-quality GaN on sapphire using a three-step approach

Journal of crystal growth, 2002-02, Vol.234 (4), p.637-645

2002

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Metalorganic chemical vapor deposition selective growth and characterization of InGaN quantum dots

Applied physics letters, 1999-08, Vol.75 (7), p.950-952

1999

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Dopant Migration-Induced Interface Dipole Effect in n-Doped GaAs/AlGaAs Terahertz Detectors

IEEE electron device letters, 2008-10, Vol.29 (10), p.1090-1093

2008

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Characterization of Mg-doped GaN grown by metalorganic chemical vapor deposition

Solid-state electronics, 2000-09, Vol.44 (9), p.1669-1677

2000

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Monolithic integration of low-temperature-grown GaAs with a two-dimensional electron gas

Semiconductor science and technology, 2007-07, Vol.22 (7), p.811-813

2007

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Transport properties of SiO 2 /AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistors on SiC substrate

Journal of physics. D, Applied physics, 2014-04, Vol.47 (13), p.135108

2014

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Transport properties of SiO2/AlInN/AlN/GaN metal-oxide-semiconductor high electron mobility transistors on SiC substrate

Efficient prediction of terahertz quantum cascade laser dynamics from steady-state simulations

Terahertz inverse synthetic aperture radar imaging using self-mixing interferometry with a quantum cascade laser

MOCVD growth of semipolar AlxGa1−xN on m-plane sapphire for applications in deep-ultraviolet light emitters

Large periphery AlInN AlN GaN metal-oxide-semiconductor heterostructure field-effect transistors on sapphire substrate

Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2 gate dielectric

Enhancement of light extraction efficiency in sub-300 nm nitride thin-film flip-chip light-emitting diodes

Terahertz vibrational absorption spectroscopy using microstrip-line waveguides

Quasi-pseudomorphic AlGaN based deep ultraviolet LEDs over sapphire substrates

Terahertz radar cross-section characterisation using laser feedback interferometry with quantum cascade laser

Optical probe of InAs/GaAs self-assembled quantum dots grown using low growth rate and growth interruptions

Terahertz evanescent field microscopy of dielectric materials using on-chip waveguides

Generation of Bessel beams using a terahertz quantum cascade laser

Measurement and analysis of the diffuse reflectance of powdered samples at terahertz frequencies using a quantum cascade laser

Effect of silicon doping on the optical and transport properties of InGaN/GaN multiple-quantum-well structures

Optical investigation of InGaN/GaN multiple quantum wells

MBE growth and transport properties of silicon δ-doped GaAs/AlAs quantum well structures for terahertz frequency detection

Effect of reactive ion etching on the yellow luminescence of GaN

Study on the properties of CuInSe2 ingots grown from the melt using stoichiometric and non-stoichiometric charges

MOCVD growth of device-quality GaN on sapphire using a three-step approach

Metalorganic chemical vapor deposition selective growth and characterization of InGaN quantum dots

Dopant Migration-Induced Interface Dipole Effect in n-Doped GaAs/AlGaAs Terahertz Detectors

Characterization of Mg-doped GaN grown by metalorganic chemical vapor deposition

Monolithic integration of low-temperature-grown GaAs with a two-dimensional electron gas

Transport properties of SiO 2 /AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistors on SiC substrate

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