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High performance SiC detectors for MeV ion beams generated by intense pulsed laser plasmas

Journal of materials research, 2013-01, Vol.28 (1), p.87-93

2013

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A novel micro-Raman technique to detect and characterize 4H-SiC stacking faults

Journal of applied physics, 2014-10, Vol.116 (16)

2014

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Photo-electrochemical water splitting in silicon based photocathodes enhanced by plasmonic/catalytic nanostructures

Materials science & engineering. B, Solid-state materials for advanced technology, 2017-11, Vol.225, p.128-133

2017

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Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults

Applied physics letters, 2023-08, Vol.123 (7)

2023

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Effects of annealing temperature on the degree of inhomogeneity of nickel-silicide/SiC Schottky barrier

Journal of applied physics, 2005-07, Vol.98 (2)

2005

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Mechanisms of growth and defect properties of epitaxial SiC

Applied physics reviews, 2014-09, Vol.1 (3), p.31301

2014

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On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy

Applied surface science, 2020-10, Vol.526, p.146656, Article 146656

2020

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Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing

Journal of applied physics, 2022-12, Vol.132 (24)

2022

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Silicon carbide detectors study for NUMEN project

EPJ Web of Conferences, 2016, Vol.117, p.10006

2016

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3C-SiC grown on Si by using a Si1-xGex buffer layer

Journal of crystal growth, 2019-08, Vol.519, p.1-6

2019

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Highly reproducible ideal SiC Schottky rectifiers: effects of surface preparation and thermal annealing on the Ni/6H-SiC barrier height

Applied physics. A, Materials science & processing, 2003-11, Vol.77 (6), p.827-833

2003

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Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars

Materials & design, 2021-10, Vol.208, p.109833, Article 109833

2021

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4H-SiC epitaxial layer growth by trichlorosilane (TCS)

Journal of crystal growth, 2008-12, Vol.311 (1), p.107-113

2008

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Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy

Physical chemistry chemical physics : PCCP, 2022-10, Vol.24 (39), p.24487-24494

2022

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Silicon Carbide characterization at the n_TOF spallation source with quasi-monoenergetic fast neutrons

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2020-12, Vol.983, p.164578, Article 164578

2020

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Electron backscattering from stacking faults in SiC by means of ab initio quantum transport calculations

Physical review. B, Condensed matter and materials physics, 2012-06, Vol.85 (23), Article 235310

2012

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Carbonization and transition layer effects on 3C-SiC film residual stress

Journal of crystal growth, 2017-09, Vol.473, p.11-19

2017

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Drift mobility in 4H-SiC Schottky diodes

Applied physics letters, 2005-10, Vol.87 (14), p.142105-142105-3

2005

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Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications

Semiconductor science and technology, 2021-05, Vol.36 (5), p.55006

2021

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Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (100) seeding layers

Journal of crystal growth, 2017-11, Vol.478, p.159-162

2017

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Improvement of high temperature stability of nickel contacts on n-type 6H–SiC

Applied surface science, 2001-12, Vol.184 (1), p.295-298

2001

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Performance of a thick 250 μm silicon carbide detector: stability and energy resolution

Journal of instrumentation, 2023-03, Vol.18 (3), p.C03007

2023

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Interface state density evaluation of high quality hetero-epitaxial 3C–SiC(001) for high-power MOSFET applications

Materials science & engineering. B, Solid-state materials for advanced technology, 2015-08, Vol.198, p.14-19

2015

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Growing bulk‐like 3C‐SiC from seeding material produced by CVD

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.np-n/a

2017

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A Study of Structural Defects in 3C-SiC Hetero-Epitaxial Films

Materials science forum, 2010-01, Vol.645-648, p.371-374

2010

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High performance SiC detectors for MeV ion beams generated by intense pulsed laser plasmas

A novel micro-Raman technique to detect and characterize 4H-SiC stacking faults

Photo-electrochemical water splitting in silicon based photocathodes enhanced by plasmonic/catalytic nanostructures

Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults

Effects of annealing temperature on the degree of inhomogeneity of nickel-silicide/SiC Schottky barrier

Mechanisms of growth and defect properties of epitaxial SiC

On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy

Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing

Silicon carbide detectors study for NUMEN project

3C-SiC grown on Si by using a Si1-xGex buffer layer

Highly reproducible ideal SiC Schottky rectifiers: effects of surface preparation and thermal annealing on the Ni/6H-SiC barrier height

Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars

4H-SiC epitaxial layer growth by trichlorosilane (TCS)

Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy

Silicon Carbide characterization at the n_TOF spallation source with quasi-monoenergetic fast neutrons

Electron backscattering from stacking faults in SiC by means of ab initio quantum transport calculations

Carbonization and transition layer effects on 3C-SiC film residual stress

Drift mobility in 4H-SiC Schottky diodes

Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications

Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (100) seeding layers

Improvement of high temperature stability of nickel contacts on n-type 6H–SiC

Performance of a thick 250 μm silicon carbide detector: stability and energy resolution

Interface state density evaluation of high quality hetero-epitaxial 3C–SiC(001) for high-power MOSFET applications

Growing bulk‐like 3C‐SiC from seeding material produced by CVD

A Study of Structural Defects in 3C-SiC Hetero-Epitaxial Films

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