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Assistance extracorporelle au cours du syndrome de détresse respiratoire aiguë (chez l’adulte et l’enfant, à l’exclusion du nouveau-né). Conférence de consensus organisée par la Société de réanimation de langue française

Revue des maladies respiratoires, 2014-10, Vol.31 (8), p.779-795

2014

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Approximate Single-Diode Photovoltaic Model for Efficient I-V Characteristics Estimation

TheScientificWorld, 2013-01, Vol.2013 (1), p.230471-230471

2013

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A Comprehensive Study of the Corner Effects in Pi-Gate MOSFETs Including Quantum Effects

IEEE transactions on electron devices, 2007-12, Vol.54 (12), p.3369-3377

2007

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IEEE_Xplore

Intubation and extubation of the ICU patient

Anaesthesia critical care & pain medicine, 2017-10, Vol.36 (5), p.327-341

2017

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Hole Mobility in Ultrathin Double-Gate SOI Devices: The Effect of Acoustic Phonon Confinement

IEEE electron device letters, 2009-12, Vol.30 (12), p.1338-1340

2009

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IEEE_Xplore

Reaching sub-32 nm nodes: ET-FDSOI and BOX optimization

Solid-state electronics, 2012-04, Vol.70, p.101-105

2012

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Acoustic phonon confinement in silicon nanolayers:Effect on electron mobility

Journal of applied physics, 2006-07, Vol.100 (1), p.013701-013701-7

2006

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Effect of confined acoustic phonons on the electron mobility of rectangular nanowires

Applied physics letters, 2013-10, Vol.103 (16)

2013

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Influence of acoustic phonon confinement on electron mobility in ultrathin silicon on insulator layers

Applied physics letters, 2006-03, Vol.88 (12), p.122108-122108-3

2006

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Equivalent Oxide Thickness of Trigate SOI MOSFETs With High- \kappa Insulators

IEEE transactions on electron devices, 2009-11, Vol.56 (11), p.2711-2719

2009

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IEEE_Xplore

Inversion charge modeling in n-type and p-type Double-Gate MOSFETs including quantum effects: The role of crystallographic orientation

Solid-state electronics, 2012, Vol.67 (1), p.30-37

2012

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Erratum to “Intubation and extubation of the ICU patient” [Anaesth. Crit. Care Pain Med. 36 (5) (2017) 327–341]

Anaesthesia critical care & pain medicine, 2018-06, Vol.37 (3), p.295-296

2018

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Simulation of the electrostatic and transport properties of 3D-stacked GAA silicon nanowire FETs

Solid-state electronics, 2011-05, Vol.59 (1), p.62-67

2011

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Impact of S/D tunneling in ultrascaled devices, a Multi-Subband Ensemble Monte Carlo study

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2015, p.214-217

2015

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IEEE_Xplore

Hole transport in DGSOI devices: Orientation and silicon thickness effects

Solid-state electronics, 2010-02, Vol.54 (2), p.191-195

2010

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Entangled networks, synchronization, and optimal network topology

Physical review letters, 2005-10, Vol.95 (18), p.188701.1-188701.4, Article 188701

2005

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DFT-based layered dielectric model of few-layer MoS2

Solid-state electronics, 2022-08, Vol.194, p.108346, Article 108346

2022

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Monte Carlo simulation of Hall and magnetoresistance mobility in SOI devices

Solid-state electronics, 2007-09, Vol.51 (9), p.1216-1220

2007

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Towards a DFT-based layered model for TCAD simulations of MoS2

Solid-state electronics, 2022-11, Vol.197, p.108437, Article 108437

2022

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Detecting network communities: a new systematic and efficient algorithm

Journal of statistical mechanics, 2004-10, Vol.2004 (10), p.P10012

2004

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Extracorporeal life support for patients with acute respiratory distress syndrome (adult and paediatric). Consensus conference organized by the French Intensive Care Society

Revue des maladies respiratoires, 2014-10, Vol.31 (8), p.779

2014

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3D-TCAD benchmark of two-gate dual-doped Reconfigurable FETs on FDSOI28 technology

Solid-state electronics, 2023-02, Vol.200, p.108577, Article 108577

2023

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Experts’ guidelines of intubation and extubation of the ICU patient of French Society of Anaesthesia and Intensive Care Medicine (SFAR) and French-speaking Intensive Care Society (SRLF): In collaboration with the pediatric Association of French-speaking Anaesthetists and Intensivists (ADARPEF), French-speaking Group of Intensive Care and Paediatric emergencies (GFRUP) and Intensive Care physiotherapy society (SKR)

Annals of intensive care, 2019-01, Vol.9 (1), p.13-13, Article 13

2019

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A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations

Solid-state electronics, 2019-09, Vol.159, p.19-25

2019

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Performance of FDSOI double-gate dual-doped reconfigurable FETs

Solid-state electronics, 2022-08, Vol.194, p.108336, Article 108336

2022

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Assistance extracorporelle au cours du syndrome de détresse respiratoire aiguë (chez l’adulte et l’enfant, à l’exclusion du nouveau-né). Conférence de consensus organisée par la Société de réanimation de langue française

Approximate Single-Diode Photovoltaic Model for Efficient I-V Characteristics Estimation

A Comprehensive Study of the Corner Effects in Pi-Gate MOSFETs Including Quantum Effects

Intubation and extubation of the ICU patient

Hole Mobility in Ultrathin Double-Gate SOI Devices: The Effect of Acoustic Phonon Confinement

Reaching sub-32 nm nodes: ET-FDSOI and BOX optimization

Acoustic phonon confinement in silicon nanolayers:Effect on electron mobility

Effect of confined acoustic phonons on the electron mobility of rectangular nanowires

Influence of acoustic phonon confinement on electron mobility in ultrathin silicon on insulator layers

Equivalent Oxide Thickness of Trigate SOI MOSFETs With High- \kappa Insulators

Inversion charge modeling in n-type and p-type Double-Gate MOSFETs including quantum effects: The role of crystallographic orientation

Erratum to “Intubation and extubation of the ICU patient” [Anaesth. Crit. Care Pain Med. 36 (5) (2017) 327–341]

Simulation of the electrostatic and transport properties of 3D-stacked GAA silicon nanowire FETs

Impact of S/D tunneling in ultrascaled devices, a Multi-Subband Ensemble Monte Carlo study

Hole transport in DGSOI devices: Orientation and silicon thickness effects

Entangled networks, synchronization, and optimal network topology

DFT-based layered dielectric model of few-layer MoS2

Monte Carlo simulation of Hall and magnetoresistance mobility in SOI devices

Towards a DFT-based layered model for TCAD simulations of MoS2

Detecting network communities: a new systematic and efficient algorithm

Extracorporeal life support for patients with acute respiratory distress syndrome (adult and paediatric). Consensus conference organized by the French Intensive Care Society

3D-TCAD benchmark of two-gate dual-doped Reconfigurable FETs on FDSOI28 technology

A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations

Performance of FDSOI double-gate dual-doped reconfigurable FETs

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