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Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials

Electronics letters, 1989-05, Vol.25 (11), p.718-719

1989

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Relationship between self-organization and size of InAs islands on InP(001) grown by gas-source molecular beam epitaxy

Applied physics letters, 1995-09, Vol.67 (13), p.1850-1852

1995

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Optical activation of Er3+ implanted in silicon by oxygen impurities

Japanese journal of applied physics, 1990, Vol.29 (4), p.L524-L526

1990

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The effect of the growth procedure and the InAs amount on the formation of strain-induced islands in the InAs/InP(001) system

Applied surface science, 1998-01, Vol.123-124, p.751-756

1998

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Structural aspects of the growth of InAs islands on InP substrate

Solid-state electronics, 1996, Vol.40 (1), p.615-619

1996

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Epitaxial liftoff microcavities for 1.55-μm quantum-well spatial light modulators

IEEE photonics technology letters, 1999-01, Vol.11 (1), p.57-59, Article 57

1999

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Characterization of Ca1-xErxF2+x solid solution thin films grown on Si(100) substrates

Journal of applied physics, 1993-02, Vol.73 (3), p.1180-1186

1993

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Anomalous behavior of ion-implanted GaSb

Applied physics letters, 1991-10, Vol.59 (15), p.1872-1874

1991

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Spatial modulation of the dielectric function using free carriers and/or coherent effects in quantum-well semiconductor microcavity

Applied physics letters, 1999-05, Vol.74 (20), p.3056-3058

1999

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Erbium-doped hydrogenated amorphous silicon prepared by dc sputtering

Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties., 1999-08, Vol.79 (8), p.1205-1211

1999

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Simulation and photoluminescence characterization of transverse electric-transverse magnetic emission of strained Ga0.47In0.53As/Ga062In038As superlattices

Materials science & engineering. B, Solid-state materials for advanced technology, 1995-05, Vol.31 (3), p.293-297

1995

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Direct correlation of structural and optical properties of InAs self-assembled dots deposited on InP(100)

Applied physics letters, 1997-11, Vol.71 (19), p.2818-2820

1997

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Scanning photoluminescence technique: application to defect recovery of ion-implanted InP

Semiconductor science and technology, 1992-01, Vol.7 (1A), p.A32-A35

1992

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Erbium implanted in III-V materials

Japanese Journal of Applied Physics, 1988-12, Vol.27 (12), p.L2348-2350

1988

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Scanning photoluminescence characterization of iron-doped gas source molecular beam epitaxy indium phosphide layers

Materials science & engineering. B, Solid-state materials for advanced technology, 1993-06, Vol.20 (1), p.82-87

1993

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Crystalline characterization by Rutherford backscattering spectrometry and electron channeling of in situ grown YBa2Cu3O7 thin films deposited on (100) MgO by d.c. sputtering or laser ablation

Journal of materials science, 1993-01, Vol.28 (18), p.4934-4939

1993

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Nondiffusion and 1•54 μm luminescence of erbium implanted in InP

Electronics letters, 1987, Vol.23 (13), p.684-686

1987

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Fe-doped InGaAs/InGaAsP photorefractive multiple quantum well devices operating at 1.55 μm

Applied physics letters, 1997-06, Vol.70 (26), p.3591-3593

1997

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Angle resolved X-ray photoemission study of rapid thermal annealing applied to different GaAs and InP samples

Electronics letters, 1990-01, Vol.26 (15), p.1119-1122

1990

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Erbium-doped GaAs light-emitting diode at 1.54 μm

Electronics letters, 1988, Vol.24 (15), p.956-958

1988

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Spatial investigation of an iron-doped indium phosphide ingot

Applied surface science, 1991-06, Vol.50 (1), p.237-244

1991

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Inhomogeneity in a semi-insulating indium phosphide ingot

Journal of crystal growth, 1991, Vol.113 (1), p.39-44

1991

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Luminescent Er doped microparticles in a semiconductor matrix

Electronics letters, 1990, Vol.26 (19), p.1556-1558

1990

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High photoluminescence efficiency of InAs/InP self-assembled quantum dots emitting at 1.5-1.6 μm

Semiconductor science and technology, 1998, Vol.13 (1), p.143-145

1998

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Photorefractive multiple quantum well device using quantum dots as trapping zones

Applied physics letters, 1997-03, Vol.70 (12), p.1575-1577

1997

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Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials

Relationship between self-organization and size of InAs islands on InP(001) grown by gas-source molecular beam epitaxy

Optical activation of Er3+ implanted in silicon by oxygen impurities

The effect of the growth procedure and the InAs amount on the formation of strain-induced islands in the InAs/InP(001) system

Structural aspects of the growth of InAs islands on InP substrate

Epitaxial liftoff microcavities for 1.55-μm quantum-well spatial light modulators

Characterization of Ca1-xErxF2+x solid solution thin films grown on Si(100) substrates

Anomalous behavior of ion-implanted GaSb

Spatial modulation of the dielectric function using free carriers and/or coherent effects in quantum-well semiconductor microcavity

Erbium-doped hydrogenated amorphous silicon prepared by dc sputtering

Simulation and photoluminescence characterization of transverse electric-transverse magnetic emission of strained Ga0.47In0.53As/Ga062In038As superlattices

Direct correlation of structural and optical properties of InAs self-assembled dots deposited on InP(100)

Scanning photoluminescence technique: application to defect recovery of ion-implanted InP

Erbium implanted in III-V materials

Scanning photoluminescence characterization of iron-doped gas source molecular beam epitaxy indium phosphide layers

Crystalline characterization by Rutherford backscattering spectrometry and electron channeling of in situ grown YBa2Cu3O7 thin films deposited on (100) MgO by d.c. sputtering or laser ablation

Nondiffusion and 1•54 μm luminescence of erbium implanted in InP

Fe-doped InGaAs/InGaAsP photorefractive multiple quantum well devices operating at 1.55 μm

Angle resolved X-ray photoemission study of rapid thermal annealing applied to different GaAs and InP samples

Erbium-doped GaAs light-emitting diode at 1.54 μm

Spatial investigation of an iron-doped indium phosphide ingot

Inhomogeneity in a semi-insulating indium phosphide ingot

Luminescent Er doped microparticles in a semiconductor matrix

High photoluminescence efficiency of InAs/InP self-assembled quantum dots emitting at 1.5-1.6 μm

Photorefractive multiple quantum well device using quantum dots as trapping zones

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