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On the role of secondary extinction in the measurement of the integrated intensity of X-ray diffraction peaks and in the determination of the thickness of damaged epitaxial layers

Physics of the solid state, 2016-06, Vol.58 (6), p.1090-1097

Kyutt, R. N.

2016

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Intensity Distribution of the Three-Wave Diffraction from Dislocation Epitaxial Layers in the Reciprocal Space

Physics of the solid state, 2018-04, Vol.60 (4), p.695-699

Kyutt, R. N.

2018

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Three-wave diffraction in damaged epitaxial layers with a wurtzite structure

Technical physics, 2011-05, Vol.56 (5), p.668-675

Kyutt, R. N.

2011

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X-ray diffraction determination of the degree of ordering of a solid solution in epitaxial AlGaN layers

Physics of the solid state, 2014-12, Vol.56 (12), p.2390-2392

2014

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On magnetism of nickel clusters in nanoporous carbon

Physics of the solid state, 2017-10, Vol.59 (10), p.2082-2088

2017

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Raman Spectroscopy as a Tool for Characterization of Strained Hexagonal GaN/AlxGa1-xN Superlattices

physica status solidi (b), 2002-12, Vol.234 (3), p.975-979

2002

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Electrical and galvanomagnetic properties of nanoporous carbon samples impregnated with bromine

Physics of the solid state, 2013-07, Vol.55 (7), p.1487-1493

2013

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Cluster structure of nanoporous carbon produced from silicon carbide

Physics of the solid state, 2011-08, Vol.53 (8), p.1739-1746

2011

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Microstructure and strain of ZnO molecular-beam epitaxial layers on sapphire

Semiconductors (Woodbury, N.Y.), 2010-02, Vol.44 (2), p.251-254

2010

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Photoluminescence in silicon implanted with silicon ions at amorphizing doses

Semiconductors (Woodbury, N.Y.), 2011-09, Vol.45 (9), p.1140-1144

2011

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X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals

Technical physics, 2010-04, Vol.55 (4), p.537-545

2010

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Ultra-small angle X-ray scattering from bulk nanoporous carbon produced from silicon carbide

Carbon (New York), 2004, Vol.42 (2), p.405-413

2004

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Atomic structure of CaF 2/MnF 2–Si(1 1 1) superlattices from X-ray diffraction

Applied surface science, 2007-02, Vol.253 (8), p.3991-3999

2007

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Atomic structure of CaF2/MnF2–Si(1 1 1) superlattices from X-ray diffraction

Applied surface science, 2007-02, Vol.253 (8), p.3991-3999

2007

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Structural and Luminescent Properties of Implanted Silicon Layers with Dislocation-Related Luminescence

Solid state phenomena, 2009-10, Vol.156-158, p.573-578

2009

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Optic and Acoustic Phonons in Strained Hexagonal GaN/AlGaN Multilayer Structures

Physica status solidi. A, Applied research, 2001-12, Vol.188 (2), p.863-866

2001

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Defect structure of erbium-doped [formula omitted] silicon layers formed by solid phase epitaxy

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2001, Vol.173 (3), p.319-325

2001

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Surface X-ray diffraction studies of CaF 2 (110)/Si(001) interface formation

Acta crystallographica. Section A, Foundations of crystallography, 2008-08, Vol.64 (a1), p.C556-C556

2008

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Direct assessment of relaxation and defect propagation in different as-grown and in situ post-growth annealed thin Ge/Si and step-graded Si1−xGex/Si buffer layers

Solid-state electronics, 2001-11, Vol.45 (11), p.1869-1874

2001

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Spatial distribution of Cd in CdSe/ZnSe superlattices studied by X-ray diffraction

Applied surface science, 2000-10, Vol.166 (1), p.341-345

2000

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Structural and luminescence studies of CdF2CaF2 superlattices on Si(111)

Applied surface science, 1998-01, Vol.123-124, p.595-598

1998

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Interface Effects in Type-II CdSe/BeTe Quantum Dots

Physica status solidi. B, Basic research, 2002-01, Vol.229 (1), p.489-492

2002

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Excitons as a probe of interface morphology in Cd(Zn)Se/ZnSe heterostructures

Applied surface science, 2000-10, Vol.166 (1), p.278-283

2000

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Direct assessment of relaxation and defect propagation in different as-grown and in situ post-growth annealed thin Ge/Si and step-graded Si 1− xGe x/Si buffer layers

Solid-state electronics, 2001, Vol.45 (11), p.1869-1874

2001

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CdF2–CaF2 superlattices on Si(111): MBE growth, structural and luminescence studies

Journal of crystal growth, 1999-05, Vol.201-202, p.1053-1056

1999

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On the role of secondary extinction in the measurement of the integrated intensity of X-ray diffraction peaks and in the determination of the thickness of damaged epitaxial layers

Intensity Distribution of the Three-Wave Diffraction from Dislocation Epitaxial Layers in the Reciprocal Space

Three-wave diffraction in damaged epitaxial layers with a wurtzite structure

X-ray diffraction determination of the degree of ordering of a solid solution in epitaxial AlGaN layers

On magnetism of nickel clusters in nanoporous carbon

Raman Spectroscopy as a Tool for Characterization of Strained Hexagonal GaN/AlxGa1-xN Superlattices

Electrical and galvanomagnetic properties of nanoporous carbon samples impregnated with bromine

Cluster structure of nanoporous carbon produced from silicon carbide

Microstructure and strain of ZnO molecular-beam epitaxial layers on sapphire

Photoluminescence in silicon implanted with silicon ions at amorphizing doses

X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals

Ultra-small angle X-ray scattering from bulk nanoporous carbon produced from silicon carbide

Atomic structure of CaF 2/MnF 2–Si(1 1 1) superlattices from X-ray diffraction

Atomic structure of CaF2/MnF2–Si(1 1 1) superlattices from X-ray diffraction

Structural and Luminescent Properties of Implanted Silicon Layers with Dislocation-Related Luminescence

Optic and Acoustic Phonons in Strained Hexagonal GaN/AlGaN Multilayer Structures

Defect structure of erbium-doped [formula omitted] silicon layers formed by solid phase epitaxy

Surface X-ray diffraction studies of CaF 2 (110)/Si(001) interface formation

Direct assessment of relaxation and defect propagation in different as-grown and in situ post-growth annealed thin Ge/Si and step-graded Si1−xGex/Si buffer layers

Spatial distribution of Cd in CdSe/ZnSe superlattices studied by X-ray diffraction

Structural and luminescence studies of CdF2CaF2 superlattices on Si(111)

Interface Effects in Type-II CdSe/BeTe Quantum Dots

Excitons as a probe of interface morphology in Cd(Zn)Se/ZnSe heterostructures

Direct assessment of relaxation and defect propagation in different as-grown and in situ post-growth annealed thin Ge/Si and step-graded Si 1− xGe x/Si buffer layers

CdF2–CaF2 superlattices on Si(111): MBE growth, structural and luminescence studies

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