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Negative gate-bias temperature stability of N-doped InGaZnO active-layer thin-film transistors

Applied physics letters, 2013-02, Vol.102 (8)

2013

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Electrical and Structural Characteristics of Excimer Laser-Crystallized Polycrystalline Si1−xGex Thin-Film Transistors

Materials, 2019-05, Vol.12 (11), p.1739

2019

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Improved Data Retention of InSnZnO Nonvolatile Memory by H2O2 Treated Al2O3 Tunneling Layer: A Cost-Effective Method

IEEE electron device letters, 2016-10, Vol.37 (10), p.1272-1275

2016

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Suppression of temperature instability in InGaZnO thin-film transistors by in situ nitrogen doping

Semiconductor science and technology, 2013-11, Vol.28 (11), p.115010

2013

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Drain-Induced Barrier Lowering and Parasitic Resistance Induced Instabilities in Short-Channel InSnZnO TFTs

IEEE electron device letters, 2014-07, Vol.35 (7), p.756-758

2014

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Effect of high conductivity amorphous InGaZnO active layer on the field effect mobility improvement of thin film transistors

Journal of applied physics, 2014-12, Vol.116 (21)

2014

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Effects of Carrier Concentration, Indium Content, and Crystallinity on the Electrical Properties of Indium-Tin-Zinc-Oxide Thin-Film Transistors

IEEE electron device letters, 2013-09, Vol.34 (9), p.1151-1153

2013

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Improvement in the performance of an InGaZnO thin-film transistor by controlling interface trap densities between the insulator and active layer

Semiconductor science and technology, 2011-08, Vol.26 (8), p.085012

2011

Volltextzugriff (PDF)

Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation

Materials, 2019-01, Vol.12 (1), p.161

2019

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Enhancement of electrical stability of a-IGZO TFTs by improving the surface morphology and packing density of active channel

Current Applied Physics, 2013, 13(1), , pp.246-251

2013

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Boosting the mobility and bias stability of oxide-based thin-film transistors with ultra-thin nanocrystalline InSnO:Zr layer

Applied physics letters, 2015-01, Vol.106 (3)

2015

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A numerical study for the optimal arrangement of ocean current turbine generators in the ocean current power parks

Current Applied Physics, 2010, 10(2), , pp.137-141

2010

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Bias-stability improvement using Al2O3 interfacial dielectrics in a-InSnZnO thin-film transistors

Semiconductor science and technology, 2013-08, Vol.28 (8)

2013

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Effects of interface trap density on the electrical performance of amorphous InSnZnO thin-film transistor

Journal of semiconductors, 2015-02, Vol.36 (2), p.82-86

梁永烨 Kyungsoo Jang S. Velumani Cam Phu Thi Nguyen and Junsin Yi

2015

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Bias-stress-induced threshold voltage shift dependence of negative charge trapping in the amorphous indium tin zinc oxide thin-film transistors

Semiconductor science and technology, 2013-10, Vol.28 (10), p.105014

2013

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Electrical mechanism analysis of Al2O3 doped zinc oxide thin films deposited by rotating cylindrical DC magnetron sputtering

Thin solid films, 2011-08, Vol.519 (20), p.6910-6915

2011

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Poly-silicon thin-film transistors without active layer pattern for high current performance with large operational range

Semiconductor science and technology, 2013-10, Vol.28 (10), p.105018

2013

Volltextzugriff (PDF)

Characterization of MONOS nonvolatile memory by solid phase crystallization on glass

Surface & coatings technology, 2008-08, Vol.202 (22-23), p.5637-5640

2008

Volltextzugriff (PDF)

Electrical and Structural Characteristics of Excimer Laser-Crystallized Polycrystalline Si 1-x Ge x Thin-Film Transistors

Materials, 2019-05, Vol.12 (11)

2019

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Enhanced electrical properties of oxide semiconductor thin-film transistors with high conductivity thin layer insertion for the channel region

Applied surface science, 2017-02, Vol.396, p.1472-1477

2017

Volltextzugriff (PDF)

Corrigendum to ‘Enhanced electrical properties of oxide semiconductor thin-film transistors with high conductivity thin layer insertion for the channel region’ [Applied Surface Science 396 (2017) 1472–1477]

Applied surface science, 2019-03, Vol.469, p.1016-1016

2019

Volltextzugriff (PDF)

Aging effects on the stability of nitrogen-doped and un-doped InGaZnO thin-film transistors

Materials science in semiconductor processing, 2015-09, Vol.37, p.129-134

2015

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Application of a Gate Blocking Layer on Glass by Using TiO2 as a High-k Material for a Nonvolatile Memory

Journal of the Korean Physical Society, 2008, 52(6), , pp.1863-1867

2008

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Effects of tunneling dielectrics formed by CO2 and N2O plasma-assisted oxidations on memory characteristics in p-channel LTPS NVM devices with ONO structure

Semiconductor science and technology, 2018-10, Vol.33 (12)

2018

Volltextzugriff (PDF)

Memory Characteristics of MNNOS Capacitors with Various Energy Band Gaps of Silicon Nitride

Journal of the Korean Physical Society, 2009, 54(4), , pp.1492-1495

2009

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Negative gate-bias temperature stability of N-doped InGaZnO active-layer thin-film transistors

Electrical and Structural Characteristics of Excimer Laser-Crystallized Polycrystalline Si1−xGex Thin-Film Transistors

Improved Data Retention of InSnZnO Nonvolatile Memory by H2O2 Treated Al2O3 Tunneling Layer: A Cost-Effective Method

Suppression of temperature instability in InGaZnO thin-film transistors by in situ nitrogen doping

Drain-Induced Barrier Lowering and Parasitic Resistance Induced Instabilities in Short-Channel InSnZnO TFTs

Effect of high conductivity amorphous InGaZnO active layer on the field effect mobility improvement of thin film transistors

Effects of Carrier Concentration, Indium Content, and Crystallinity on the Electrical Properties of Indium-Tin-Zinc-Oxide Thin-Film Transistors

Improvement in the performance of an InGaZnO thin-film transistor by controlling interface trap densities between the insulator and active layer

Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation

Enhancement of electrical stability of a-IGZO TFTs by improving the surface morphology and packing density of active channel

Boosting the mobility and bias stability of oxide-based thin-film transistors with ultra-thin nanocrystalline InSnO:Zr layer

A numerical study for the optimal arrangement of ocean current turbine generators in the ocean current power parks

Bias-stability improvement using Al2O3 interfacial dielectrics in a-InSnZnO thin-film transistors

Effects of interface trap density on the electrical performance of amorphous InSnZnO thin-film transistor

Bias-stress-induced threshold voltage shift dependence of negative charge trapping in the amorphous indium tin zinc oxide thin-film transistors

Electrical mechanism analysis of Al2O3 doped zinc oxide thin films deposited by rotating cylindrical DC magnetron sputtering

Poly-silicon thin-film transistors without active layer pattern for high current performance with large operational range

Characterization of MONOS nonvolatile memory by solid phase crystallization on glass

Electrical and Structural Characteristics of Excimer Laser-Crystallized Polycrystalline Si 1-x Ge x Thin-Film Transistors

Enhanced electrical properties of oxide semiconductor thin-film transistors with high conductivity thin layer insertion for the channel region

Corrigendum to ‘Enhanced electrical properties of oxide semiconductor thin-film transistors with high conductivity thin layer insertion for the channel region’ [Applied Surface Science 396 (2017) 1472–1477]

Aging effects on the stability of nitrogen-doped and un-doped InGaZnO thin-film transistors

Application of a Gate Blocking Layer on Glass by Using TiO2 as a High-k Material for a Nonvolatile Memory

Effects of tunneling dielectrics formed by CO2 and N2O plasma-assisted oxidations on memory characteristics in p-channel LTPS NVM devices with ONO structure

Memory Characteristics of MNNOS Capacitors with Various Energy Band Gaps of Silicon Nitride

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