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Development of Benzobisoxazole-Based Novel Conjugated Polymers for Organic Thin-Film Transistors

Polymers, 2023-02, Vol.15 (5), p.1156

2023

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Rational Design of Highly Soluble and Crystalline Conjugated Polymers for High‐Performance Field‐Effect Transistors

Advanced electronic materials, 2022-05, Vol.8 (5), p.n/a

2022

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Development of Alkylthiazole-Based Novel Thermoelectric Conjugated Polymers for Facile Organic Doping

Nanomaterials (Basel, Switzerland), 2023-04, Vol.13 (7), p.1286

2023

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RESET-first unipolar resistance switching behavior in annealed Nb2O5 films

Thin solid films, 2014-05, Vol.558, p.423-429

2014

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Effect of thermal annealing on resistance switching characteristics of Pt/ZrO2/TiN stacks

Materials chemistry and physics, 2013-11, Vol.142 (2-3), p.608-613

2013

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Detecting experts on Quora: by their activity, quality of answers, linguistic characteristics and temporal behaviors

Social network analysis and mining, 2016-12, Vol.6 (1), p.5, Article 5

2016

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Ultrahigh selective etching of Si3N4 films over SiO2 films for silicon nitride gate spacer etching

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-01, Vol.28 (1), p.131-137

2010

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Fibrogenic fibroblasts increase intercellular adhesion strength by reinforcing individual OB-cadherin bonds

Journal of cell science, 2008-03, Vol.121 (Pt 6), p.877-886

2008

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Exploring the Cutting-Edge Frontiers of Electrochemical Random Access Memories (ECRAMs) for Neuromorphic Computing: Revolutionary Advances in Material-to-Device Engineering

Small (Weinheim an der Bergstrasse, Germany), 2023-10, Vol.19 (40), p.e2302593-e2302593

2023

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Fake and Spam Messages: Detecting Misinformation During Natural Disasters on Social Media

2015 IEEE/WIC/ACM International Conference on Web Intelligence and Intelligent Agent Technology (WI-IAT), 2015, Vol.1, p.17-20

2015

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High-performance resistive random access memory using two-dimensional electron gas electrode and its switching mechanism analysis

Nanotechnology, 2024-01, Vol.35 (2), p.25205

2024

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Occupants’ satisfaction with LEED- and non-LEED-certified apartments using social media data

Building and environment, 2021-12, Vol.206, p.108288, Article 108288

2021

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Study of high-pressure hydrogen annealing effects on InGaZnO thin-film transistors

Applied physics letters, 2022-08, Vol.121 (7)

2022

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RESET-first bipolar resistive switching due to redox reaction in ALD HfO2 films

Microelectronic engineering, 2013-12, Vol.112, p.46-51

2013

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Improving the PV Module Single-Diode Model Accuracy with Temperature Dependence of the Series Resistance

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 2017, p.1526-1530

Lee, Kyumin

2017

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Probing fibronectin-antibody interactions using AFM force spectroscopy and lateral force microscopy

Beilstein journal of nanotechnology, 2015-05, Vol.6 (1), p.1164-1175

2015

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3D Stackable Vertical‐Sensing Electrochemical Random‐Access Memory Using Ion‐Permeable WS 2 Electrode for High‐Density Neuromorphic Systems

Advanced functional materials, 2024-07, Vol.34 (27)

2024

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Doping of donor-acceptor polymers with long side chains via solution mixing for advancing thermoelectric properties

Nano energy, 2019-04, Vol.58, p.585-595

2019

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Sodium-based nano-ionic synaptic transistor with improved retention characteristics

Nanotechnology, 2020-11, Vol.31 (45), p.455204-455204

2020

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NbO2 selector device with Ge2Sb2Te5 thermal barrier for low off current (300 nA) and low power operation

Applied physics letters, 2023-03, Vol.122 (11)

2023

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A Highly Soluble Iron‐Based Posolyte Species with High Redox Potential for Aqueous Redox Flow Batteries

Advanced functional materials, 2023-12

2023

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A Highly Soluble Iron–Based Posolyte Species with High Redox Potential for Aqueous Redox Flow Batteries

Advanced functional materials, 2023-12, Vol.34 (11)

2023

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Enhanced ON/OFF Ratio (4 × 10 5 ) and Robust Endurance (> 10 10 ) in an InGaZnO/Hf x Zr 1-x O 2 Ferroelectric Diode via Defect Engineering

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.2238-2242

2024

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Enhanced on/off Ratio (4 \times 10 ^}\text and Robust Endurance ( > 10 ^}\text in an InGaZnO/ Hf } Zr }} O } Ferroelectric Diode via Defect Engineering

IEEE transactions on electron devices, 2024-02, p.1-5

2024

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IEEE_Xplore

1010) in an InGaZnO/HfxZr1-xO2 Ferroelectric Diode via Defect Engineering

IEEE transactions on electron devices, 2024-01, Vol.71 (3), p.2238

2024

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Development of Benzobisoxazole-Based Novel Conjugated Polymers for Organic Thin-Film Transistors

Rational Design of Highly Soluble and Crystalline Conjugated Polymers for High‐Performance Field‐Effect Transistors

Development of Alkylthiazole-Based Novel Thermoelectric Conjugated Polymers for Facile Organic Doping

RESET-first unipolar resistance switching behavior in annealed Nb2O5 films

Effect of thermal annealing on resistance switching characteristics of Pt/ZrO2/TiN stacks

Detecting experts on Quora: by their activity, quality of answers, linguistic characteristics and temporal behaviors

Ultrahigh selective etching of Si3N4 films over SiO2 films for silicon nitride gate spacer etching

Fibrogenic fibroblasts increase intercellular adhesion strength by reinforcing individual OB-cadherin bonds

Exploring the Cutting-Edge Frontiers of Electrochemical Random Access Memories (ECRAMs) for Neuromorphic Computing: Revolutionary Advances in Material-to-Device Engineering

Fake and Spam Messages: Detecting Misinformation During Natural Disasters on Social Media

High-performance resistive random access memory using two-dimensional electron gas electrode and its switching mechanism analysis

Occupants’ satisfaction with LEED- and non-LEED-certified apartments using social media data

Study of high-pressure hydrogen annealing effects on InGaZnO thin-film transistors

RESET-first bipolar resistive switching due to redox reaction in ALD HfO2 films

Improving the PV Module Single-Diode Model Accuracy with Temperature Dependence of the Series Resistance

Probing fibronectin-antibody interactions using AFM force spectroscopy and lateral force microscopy

3D Stackable Vertical‐Sensing Electrochemical Random‐Access Memory Using Ion‐Permeable WS 2 Electrode for High‐Density Neuromorphic Systems

Doping of donor-acceptor polymers with long side chains via solution mixing for advancing thermoelectric properties

Sodium-based nano-ionic synaptic transistor with improved retention characteristics

NbO2 selector device with Ge2Sb2Te5 thermal barrier for low off current (300 nA) and low power operation

A Highly Soluble Iron‐Based Posolyte Species with High Redox Potential for Aqueous Redox Flow Batteries

A Highly Soluble Iron–Based Posolyte Species with High Redox Potential for Aqueous Redox Flow Batteries

Enhanced ON/OFF Ratio (4 × 10 5 ) and Robust Endurance (> 10 10 ) in an InGaZnO/Hf x Zr 1-x O 2 Ferroelectric Diode via Defect Engineering

Enhanced on/off Ratio (4 \times 10 ^}\text and Robust Endurance ( > 10 ^}\text in an InGaZnO/ Hf } Zr }} O } Ferroelectric Diode via Defect Engineering

1010) in an InGaZnO/HfxZr1-xO2 Ferroelectric Diode via Defect Engineering

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