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Trap-limited migration of Si self-interstitials at room temperature

Physical review letters, 1996-02, Vol.76 (9), p.1493-1496

1996

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High temperature annealing effects on the electrical characteristics of C implanted Si

Journal of applied physics, 1996-04, Vol.79 (7), p.3464-3469

1996

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Ion irradiation induced phase formation in Al–Ni

Journal of materials research, 1992-04, Vol.7 (4), p.861-867

1992

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Heavy doping effects in the diffusion of group IV and V impurities in silicon

Journal of applied physics, 1993-01, Vol.73 (2), p.691-698

1993

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On the chemical diffusion in layered thin films containing amorphous Co–Zr, Ni–Zr, and Fe–Zr

Journal of materials research, 1992-04, Vol.7 (4), p.926-933

1992

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Enhanced interdiffusion in amorphous Ni-Zr thin films under tensile strain

Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties., 1992-10, Vol.66 (4), p.507-512

1992

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Electrical transport in (100)CoSi2/Si contacts

Journal of applied physics, 1995-03, Vol.77 (6), p.2525-2536

1995

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Increase in the infrared response of silicide Schottky barrier diodes by grain boundary scattering

Applied physics letters, 1995-09, Vol.67 (10), p.1372-1374

1995

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Lowered interdiffusivity in thin amorphous Ni-Zr films with large composition gradients

Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties., 1994-06, Vol.69 (6), p.1083-1091

1994

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Infrared response of epitaxial and polycrystalline CoSi2 Schottky diodes

Materials science and technology, 1998-12, Vol.14 (12), p.1303-1306

1998

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Point Defects Migration and Agglomeration in Si at Room Temperature: The Role of Surface and Impurity Content

MRS proceedings, 1997, Vol.469, Article 163

1997

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On the phase formation during ion beam mixing of Al-Ti

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1993-06, Vol.80, p.390-393

1993

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Low Energy Implantation and Transient Enhanced Diffusion: Physical Mechanisms and Technology Implications

MRS proceedings, 1997, Vol.469, Article 265

1997

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The Effect of Oxygen on The Electrical Activation and Diffusion of Ion-Implanted Boron

MRS proceedings, 1997, Vol.469, Article 291

1997

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Evidence for phase separation in amorphous Fe-Zr from chemical diffusion

Philosophical magazine letters, 1991-06, Vol.63 (6), p.309-314

1991

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Infrared response of epitaxial and polycrystalline CoSi 2 Schottky diodes

Materials science and technology, 1998-12, Vol.14 (12), p.1303-1306

1998

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Infrared response of epitaxial and polycrystalline CoSi2 Schottky diodes

Materials science and technology, 1998-12, Vol.14 (12), p.1303-1306

1998

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Influence of grain boundary scattering in the infrared response of silicide Schottky barrier diodes

Journal of applied physics, 1996-04, Vol.79 (8), p.4426-4430

1996

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Secondary defect annihilation in ion beam processed Si x Ge1− x layers using titanium silicide

Applied physics letters, 1995-11, Vol.67 (20), p.2931-2933

1995

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Characterization of C coimplanted Ge x Si1− x epitaxial layers formed by high dose Ge ion implantation in (100) Si

Journal of applied physics, 1996-04, Vol.79 (7), p.3456-3463

1996

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Time scales of transient enhanced diffusion: free and clustered interstitials

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1996-12, Vol.120 (1), p.14-18

1996

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The damage recovery and electrical activation of shallow boron implants in silicon: The effects of high energy implants

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1996-05, Vol.112 (1), p.139-143

1996

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Growth of epitaxial β-FeSi2 on (100) silicon using Fe–Ti–Si diffusion couples

Journal of applied physics, 1995-07, Vol.78 (1), p.599-601

1995

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Energetic model of ferromagnetic hysteresis 2: magnetization calculations of (110)[001] FeSi sheets by static domain behavior

Journal of applied physics, 1995-03, Vol.77 (6), p.2625-2633

1995

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Formation of β-and α-FeSi2 Films on (100) Silicon using Fe-Si and Fe-Ti-Si Diffusion Couples

MRS proceedings, 1993, Vol.320

1993

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Trap-limited migration of Si self-interstitials at room temperature

High temperature annealing effects on the electrical characteristics of C implanted Si

Ion irradiation induced phase formation in Al–Ni

Heavy doping effects in the diffusion of group IV and V impurities in silicon

On the chemical diffusion in layered thin films containing amorphous Co–Zr, Ni–Zr, and Fe–Zr

Enhanced interdiffusion in amorphous Ni-Zr thin films under tensile strain

Electrical transport in (100)CoSi2/Si contacts

Increase in the infrared response of silicide Schottky barrier diodes by grain boundary scattering

Lowered interdiffusivity in thin amorphous Ni-Zr films with large composition gradients

Infrared response of epitaxial and polycrystalline CoSi2 Schottky diodes

Point Defects Migration and Agglomeration in Si at Room Temperature: The Role of Surface and Impurity Content

On the phase formation during ion beam mixing of Al-Ti

Low Energy Implantation and Transient Enhanced Diffusion: Physical Mechanisms and Technology Implications

The Effect of Oxygen on The Electrical Activation and Diffusion of Ion-Implanted Boron

Evidence for phase separation in amorphous Fe-Zr from chemical diffusion

Infrared response of epitaxial and polycrystalline CoSi 2 Schottky diodes

Infrared response of epitaxial and polycrystalline CoSi2 Schottky diodes

Influence of grain boundary scattering in the infrared response of silicide Schottky barrier diodes

Secondary defect annihilation in ion beam processed Si x Ge1− x layers using titanium silicide

Characterization of C coimplanted Ge x Si1− x epitaxial layers formed by high dose Ge ion implantation in (100) Si

Time scales of transient enhanced diffusion: free and clustered interstitials

The damage recovery and electrical activation of shallow boron implants in silicon: The effects of high energy implants

Growth of epitaxial β-FeSi2 on (100) silicon using Fe–Ti–Si diffusion couples

Energetic model of ferromagnetic hysteresis 2: magnetization calculations of (110)[001] FeSi sheets by static domain behavior

Formation of β-and α-FeSi2 Films on (100) Silicon using Fe-Si and Fe-Ti-Si Diffusion Couples

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