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Field effect mobility model in organic thin film transistor

Applied physics letters, 2011-01, Vol.98 (2), p.023305-023305-3

2011

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High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays

Nano letters, 2004-06, Vol.4 (6), p.1059-1062

2004

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Carrier concentration dependent bimolecular recombination coefficient model in two dimensional hopping system

Synthetic metals, 2012-05, Vol.162 (7-8), p.702-704

2012

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Effect of the property of dielectric capping layers on impurity-free vacancy diffusion in InGaAs/InGaAsP MQW structures

Semiconductor science and technology, 2007-08, Vol.22 (8), p.919-924, Article 919

2007

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Effect of the Low-Pressure Chemical Vapor Deposition Time on the Silicon Morphology

Journal of the Korean Physical Society, 2009, 54(2), , pp.703-706

2009

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Optical Properties of NiO Thin Films Grown by Using Sputtering Deposition and Studied with Spectroscopic Ellipsometry

Journal of the Korean Physical Society, 2008, 52(6), , pp.1868-1876

2008

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Growth of Ferromagnetic Semiconducting Si:Mn Film by Vacuum Evaporation Method

Chemistry of materials, 2003-10, Vol.15 (21), p.3964-3965

2003

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Formation of InGaN nanorods with indium mole fractions by hydride vapor phase epitaxy

Physica Status Solidi (b), 2004-10, Vol.241 (12), p.2802-2805

2004

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Fabrication and optical property of vertically-aligned ZnO/Si double nanostructures

Journal of nanoscience and nanotechnology, 2012-06, Vol.12 (6), p.4570

2012

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Substrate and pretreatment dependence of Cu nucleation by metal–organic chemical vapor deposition

Current applied physics, 2002-06, Vol.2 (3), p.205-211

2002

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Antireflective properties of disordered Si SWSs with hydrophobic surface by thermally dewetted Pt nanomask patterns for Si-based solar cells

Current Applied Physics, 2012, 12(1), , pp.291-298

2012

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Nanoscale Ultraviolet-Light-Emitting Diodes Using Wide-Bandgap Gallium Nitride Nanorods

Advanced materials (Weinheim), 2003-04, Vol.15 (7-8), p.567-569

2003

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Numerical Implementation of Modified Coulomb-Mohr Yield Criterion for Anisotropic and Asymmetric Materials

Fibers and polymers, 2006-09, Vol.7 (3), p.276-285

2006

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An Analytical Solution to the Lateral Buckling of an Elastica with Self-Contact

Textile research journal, 2004-10, Vol.74 (10), p.899-904

2004

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Anisotropic-Asymmetric Yield Criterion and Anisotropic Hardening Law for Composite Materials: Theory and Formulations

Fibers and polymers, 2006-03, Vol.7 (1), p.42-50

2006

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Performance of Low-Operating Voltage P3HT-Based Thin-Film Transistors with Anodized Ta2O5 Insulator

Journal of the Korean Physical Society, 2004, 45(3), , pp.914-916

2004

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Electrical and Optical Properties of ZnO Films Grown on GaAs Substrates

Japanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 6A), p.3333-3336

2003

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Structural and Cathodoluminescence Properties of Gallium Nitride Nanorods by HVPE

Journal of the Korean Physical Society, 2003, 42(III), , pp.222-225

2003

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Selective Etching of Thick Si3N4, SiO2 and Si by Using CF4/O2 and C2F6 Gases with or without O2 or Ar Addition

Journal of the Korean Physical Society, 2009, 54(5), , pp.1816-1823

2009

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Effect of the Low-Pressure Chemical Vapor Deposition Time on the Silicon Morphology

Journal of the Korean Physical Society, 2009-02, p.703-706

2009

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Electro-Mechanical Properties of Metal–Insulator–Metal Device Fabricated on Polymer Substrate Using Low-Temperature Process

Japanese Journal of Applied Physics, 2002-02, Vol.41 (Part 1, No. 2A), p.533-540

2002

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Activation Energy, Capture Cross Section, and Emission Frequency of the Trap Level in Unintentionally Doped n-Type GaN Epilayers Grown on Sapphire Substrates in a Nitrogen-Rich Atmosphere

Japanese Journal of Applied Physics, 2000-11, Vol.39 (11A), p.L1084

2000

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Spring-Back Evaluation of Stretch Bending Process Based on Chaboche Combined Isotropic-Kinematic Hardening Laws

Advanced materials research, 2011, Vol.204-210, p.1745-1750

2011

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A Study of Photoelectrochemical Oxidation of GaN Epilayers by Extrinsic Photoconductivity

Japanese Journal of Applied Physics, 2001-01, Vol.40 (1A), p.L10-L12

2001

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Annealing Effect on Passivated Deep Levels in GaN Epilayers

Japanese Journal of Applied Physics, 2000, Vol.39 (9R), p.5044-5047

2000

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Field effect mobility model in organic thin film transistor

High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays

Carrier concentration dependent bimolecular recombination coefficient model in two dimensional hopping system

Effect of the property of dielectric capping layers on impurity-free vacancy diffusion in InGaAs/InGaAsP MQW structures

Effect of the Low-Pressure Chemical Vapor Deposition Time on the Silicon Morphology

Optical Properties of NiO Thin Films Grown by Using Sputtering Deposition and Studied with Spectroscopic Ellipsometry

Growth of Ferromagnetic Semiconducting Si:Mn Film by Vacuum Evaporation Method

Formation of InGaN nanorods with indium mole fractions by hydride vapor phase epitaxy

Fabrication and optical property of vertically-aligned ZnO/Si double nanostructures

Substrate and pretreatment dependence of Cu nucleation by metal–organic chemical vapor deposition

Antireflective properties of disordered Si SWSs with hydrophobic surface by thermally dewetted Pt nanomask patterns for Si-based solar cells

Nanoscale Ultraviolet-Light-Emitting Diodes Using Wide-Bandgap Gallium Nitride Nanorods

Numerical Implementation of Modified Coulomb-Mohr Yield Criterion for Anisotropic and Asymmetric Materials

An Analytical Solution to the Lateral Buckling of an Elastica with Self-Contact

Anisotropic-Asymmetric Yield Criterion and Anisotropic Hardening Law for Composite Materials: Theory and Formulations

Performance of Low-Operating Voltage P3HT-Based Thin-Film Transistors with Anodized Ta2O5 Insulator

Electrical and Optical Properties of ZnO Films Grown on GaAs Substrates

Structural and Cathodoluminescence Properties of Gallium Nitride Nanorods by HVPE

Selective Etching of Thick Si3N4, SiO2 and Si by Using CF4/O2 and C2F6 Gases with or without O2 or Ar Addition

Effect of the Low-Pressure Chemical Vapor Deposition Time on the Silicon Morphology

Electro-Mechanical Properties of Metal–Insulator–Metal Device Fabricated on Polymer Substrate Using Low-Temperature Process

Activation Energy, Capture Cross Section, and Emission Frequency of the Trap Level in Unintentionally Doped n-Type GaN Epilayers Grown on Sapphire Substrates in a Nitrogen-Rich Atmosphere

Spring-Back Evaluation of Stretch Bending Process Based on Chaboche Combined Isotropic-Kinematic Hardening Laws

A Study of Photoelectrochemical Oxidation of GaN Epilayers by Extrinsic Photoconductivity

Annealing Effect on Passivated Deep Levels in GaN Epilayers

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