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Metal semiconductor field effect transistor based on single crystal GaN

Applied physics letters, 1993-04, Vol.62 (15), p.1786-1787

1993

Volltextzugriff (PDF)

High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers

Applied physics letters, 1992-06, Vol.60 (23), p.2917-2919

1992

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Influence of buffer layers on the deposition of high quality single crystal GaN over sapphire substrates

Journal of applied physics, 1993-05, Vol.73 (9), p.4700-4702

1993

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Schottky barrier photodetector based on Mg-doped p-type GaN films

Applied physics letters, 1993-11, Vol.63 (18), p.2455-2456

1993

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Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition

Applied physics letters, 1991-02, Vol.58 (5), p.526-527

1991

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High electron mobility GaN/AlxGa1-xN heterostructures grown by low-pressure metalorganic chemical vapor deposition

Applied physics letters, 1991-05, Vol.58 (21), p.2408-2410

1991

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Reactive ion etching of gallium nitride in silicon tetrachloride plasmas

Applied physics letters, 1993-11, Vol.63 (20), p.2777-2779

1993

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GaN/AlN digital alloy short-period superlattices by switched atomic layer metalorganic chemical vapor deposition

Applied physics letters, 1993-12, Vol.63 (25), p.3470-3472

1993

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Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition

Applied physics letters, 1992-03, Vol.60 (11), p.1366-1368

1992

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Vertical-cavity, room-temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using low-pressure metalorganic chemical vapor deposition

Applied physics letters, 1991-04, Vol.58 (14), p.1515-1517

1991

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Gated photodetector based on GaN/AlGaN heterostructure field effect transistor

Electronics letters, 1995-03, Vol.31 (5), p.398-400

1995

Volltextzugriff (PDF)

High electron mobility transistor based on a GaN-AlxGa1-xN heterojunction

Applied physics letters, 1993-08, Vol.63 (9), p.1214-1215

1993

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Deposition and surface characterization of high quality single crystal GaN layers

Journal of applied physics, 1993-03, Vol.73 (6), p.3108-3110

1993

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Low pressure metalorganic chemical vapor deposition of AIN over sapphire substrates

Applied physics letters, 1992-11, Vol.61 (21), p.2539-2541

1992

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Characteristics of chemically assisted ion beam etching of gallium nitride

Applied physics letters, 1994-08, Vol.65 (7), p.889-891

1994

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Vertical–cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature

Applied physics letters, 1994-08, Vol.65 (5), p.520-521

1994

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Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor

Applied physics letters, 1994-08, Vol.65 (9), p.1121-1123

1994

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Low pressure metalorganic chemical-vapor deposition of cubic GaN over (100) GaAs substrates

Applied physics letters, 1994-11, Vol.65 (19), p.2407-2409

1994

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Observation of optically detected magnetic resonance in GaN films

Applied physics letters, 1993-11, Vol.63 (19), p.2673-2675

1993

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Reflective filters based on single-crystal GaN/AlxGa1-xN multilayers deposited using low-pressure metalorganic chemical vapor deposition

Applied physics letters, 1991-09, Vol.59 (12), p.1449-1451

1991

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Current/voltage characteristic collapse in AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias

Electronics letters, 1994-12, Vol.30 (25), p.2175-2176

1994

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Cathodoluminescence of AlN–GaN short period superlattices

Journal of applied physics, 1996-08, Vol.80 (4), p.2378-2382

1996

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Chemically assisted ion beam etching of gallium nitride

Journal of electronic materials, 1995-04, Vol.24 (4), p.229-234

1995

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Violet-blue GaN homojunction light emitting diodes with rapid thermal annealed p -type layers

Applied physics letters, 1995-04, Vol.66 (16), p.2046-2047

1995

Volltextzugriff (PDF)

Optical characterization of AlGaN-GaN-AlGaN quantum wells

Journal of electronic materials, 1992-04, Vol.21 (4), p.437-440

1992

Volltextzugriff (PDF)

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Metal semiconductor field effect transistor based on single crystal GaN

High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers

Influence of buffer layers on the deposition of high quality single crystal GaN over sapphire substrates

Schottky barrier photodetector based on Mg-doped p-type GaN films

Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition

High electron mobility GaN/AlxGa1-xN heterostructures grown by low-pressure metalorganic chemical vapor deposition

Reactive ion etching of gallium nitride in silicon tetrachloride plasmas

GaN/AlN digital alloy short-period superlattices by switched atomic layer metalorganic chemical vapor deposition

Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition

Vertical-cavity, room-temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using low-pressure metalorganic chemical vapor deposition

Gated photodetector based on GaN/AlGaN heterostructure field effect transistor

High electron mobility transistor based on a GaN-AlxGa1-xN heterojunction

Deposition and surface characterization of high quality single crystal GaN layers

Low pressure metalorganic chemical vapor deposition of AIN over sapphire substrates

Characteristics of chemically assisted ion beam etching of gallium nitride

Vertical–cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature

Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor

Low pressure metalorganic chemical-vapor deposition of cubic GaN over (100) GaAs substrates

Observation of optically detected magnetic resonance in GaN films

Reflective filters based on single-crystal GaN/AlxGa1-xN multilayers deposited using low-pressure metalorganic chemical vapor deposition

Current/voltage characteristic collapse in AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias

Cathodoluminescence of AlN–GaN short period superlattices

Chemically assisted ion beam etching of gallium nitride

Violet-blue GaN homojunction light emitting diodes with rapid thermal annealed p -type layers

Optical characterization of AlGaN-GaN-AlGaN quantum wells

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