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Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix

Applied physics letters, 1998-02, Vol.72 (8), p.942-944

1998

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A Quantitative Analysis of Two-Colour Pump and Probe Spectra from Bound Excitons in Compensated II-VI Semiconductors

Physica status solidi. B. Basic research, 2002-01, Vol.229 (2), p.617-620

2002

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Influence of compensation on the luminescence of nitrogen-doped ZnSe epilayers grown by MOVPE

Journal of crystal growth, 1996-02, Vol.159 (1-4), p.307-311

1996

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Acceptor bound biexcitons in ZnSe and CdS

Journal of crystal growth, 1996-02, Vol.159 (1-4), p.776-779

1996

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Influence of growth non-stoichiometry on optical properties of doped and non-doped ZnSe grown by chemical vapour deposition

Journal of crystal growth, 1994-04, Vol.138 (1), p.75-80

1994

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Incorporation of nitrogen in ZnSe grown by metalorganic vapour phase epitaxy

Journal of crystal growth, 1994-04, Vol.138 (1), p.379-384

1994

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Time-resolved donor-acceptor pair recombination luminescence in highly n- and p-doped II–VI semiconductors

Journal of crystal growth, 1994-04, Vol.138 (1), p.815-819

1994

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Dephasing of acceptor bound excitons in II-VI semiconductors

Physica status solidi. B. Basic research, 1995-03, Vol.188 (1), p.493-505

1995

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The influence of nitrogen on the p-conductivity in ZnSe epilayers grown by molecular beam epitaxy

Journal of crystal growth, 1994-04, Vol.138 (1), p.1073-1074

1994

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Bound Excitons in Wide-Gap II-VI and Nitride Semiconductors. Comparison of Optical Studies of Shallow Dopants in These Materials

physica status solidi (b), 1998-12, Vol.210 (2), p.327-335

1998

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Gain to absorption conversion by increasing excitation density in excitonic waveguides

Journal of crystal growth, 1998-02, Vol.184-185 (1-2), p.632-636

Kutzer, V

1998

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Intensity-dependent hot-phonon relaxation in ZnSe

Materials science & engineering. B, Solid-state materials for advanced technology, 1997, Vol.43 (1), p.46-48

1997

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Gain to absorption conversion by increasing excitation density in excitonic waveguides

Journal of crystal growth, 1998, Vol.184, p.632-636

1998

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Optical-Gain Measurements on GaN and Alx Ga1-xN Heterostructures

MRS proceedings, 1997, Vol.468

1997

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Optical-Gain Measurements on GaN and Al x Ga 1-x N Heterostructures

MRS proceedings, 1997, Vol.468, Article 237

1997

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Gain to absorption conversion by increasing excitation density in excitonic waveguides

Journal of crystal growth, 1998, Vol.184-85, p.632-636

1998

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Low Temperature Growth and Planar Nitrogen Doping of ZnSe in a Plasma-Stimulated LP-MOVPE System

Materials science forum, 1995, Vol.182-184, p.35-38

1995

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Absorption as Optical Access to Accepptor Concentrations and Compensation Mechanism in ZnSe Epilayers

Materials science forum, 1995-02, Vol.182-184, p.259-262

1995

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Degenerate-Four-Wave-Mixing at the Nitrogen Acceptor Bound Exiton in ZnSe Epilayers

Materials science forum, 1995-02, Vol.182-184, p.283-286

1995

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Tracking Additive Manufacturing Using Machine Vision

2020 IEEE 10th International Conference Nanomaterials: Applications & Properties (NAP), 2020, p.02SAMA22-1-02SAMA22-5

2020

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Kasatkinite, Ba2Ca8B5Si8O32(OH)3 · 6H2O6, a new mineral from the Bazhenovskoe deposit, the Central Urals, Russia

Geology of ore deposits, 2013, Vol.55 (7), p.558-566

2013

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Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix

A Quantitative Analysis of Two-Colour Pump and Probe Spectra from Bound Excitons in Compensated II-VI Semiconductors

Influence of compensation on the luminescence of nitrogen-doped ZnSe epilayers grown by MOVPE

Acceptor bound biexcitons in ZnSe and CdS

Influence of growth non-stoichiometry on optical properties of doped and non-doped ZnSe grown by chemical vapour deposition

Incorporation of nitrogen in ZnSe grown by metalorganic vapour phase epitaxy

Time-resolved donor-acceptor pair recombination luminescence in highly n- and p-doped II–VI semiconductors

Dephasing of acceptor bound excitons in II-VI semiconductors

The influence of nitrogen on the p-conductivity in ZnSe epilayers grown by molecular beam epitaxy

Bound Excitons in Wide-Gap II-VI and Nitride Semiconductors. Comparison of Optical Studies of Shallow Dopants in These Materials

Gain to absorption conversion by increasing excitation density in excitonic waveguides

Intensity-dependent hot-phonon relaxation in ZnSe

Gain to absorption conversion by increasing excitation density in excitonic waveguides

Optical-Gain Measurements on GaN and Alx Ga1-xN Heterostructures

Optical-Gain Measurements on GaN and Al x Ga 1-x N Heterostructures

Gain to absorption conversion by increasing excitation density in excitonic waveguides

Low Temperature Growth and Planar Nitrogen Doping of ZnSe in a Plasma-Stimulated LP-MOVPE System

Absorption as Optical Access to Accepptor Concentrations and Compensation Mechanism in ZnSe Epilayers

Degenerate-Four-Wave-Mixing at the Nitrogen Acceptor Bound Exiton in ZnSe Epilayers

Tracking Additive Manufacturing Using Machine Vision

Kasatkinite, Ba2Ca8B5Si8O32(OH)3 · 6H2O6, a new mineral from the Bazhenovskoe deposit, the Central Urals, Russia

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