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Varshni parameters for InAs/GaSb strained layer superlattice infrared photodetectors

Journal of physics. D, Applied physics, 2011-02, Vol.44 (7), p.075102

2011

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Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers

Applied physics letters, 2010-06, Vol.96 (23)

2010

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Study of Surface Treatments on InAs/GaSb Superlattice LWIR Detectors

Journal of electronic materials, 2010-10, Vol.39 (10), p.2203-2209

2010

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Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices

Applied physics letters, 2012-12, Vol.101 (25)

2012

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Lateral diffusion of minority carriers in InAsSb-based nBn detectors

Applied physics letters, 2010-09, Vol.97 (12), p.123503-123503-3

2010

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Monolithically integrated III-Sb CW super-luminal light emitting diodes on non-miscut Si (100) substrates

Electronics letters, 2007-02, Vol.43 (4), p.244-245

2007

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Passivation of long-wave infrared InAs/GaSb strained layer superlattice detectors

Infrared physics & technology, 2011-05, Vol.54 (3), p.252-257

2011

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Performance improvement of long-wave infrared InAs/GaSb strained-layer superlattice detectors through sulfur-based passivation

Infrared physics & technology, 2012-03, Vol.55 (2-3), p.216-219

2012

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Electronic characteristics of the interfacial states embedded in"buffer-free" GaSb/GaAs (001) heterojunctions

Applied physics letters, 2009-11, Vol.95 (20), p.202107-202107-3

2009

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GaSb quantum-well-based "buffer-free" vertical light emitting diode monolithically embedded within a GaAs cavity incorporating interfacial misfit arrays

Applied physics letters, 2006-11, Vol.89 (21), p.211110-211110-3

2006

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Fabrication and characteristics of broad-area light-emitting diode based on nanopatterned quantum dots

Nanotechnology, 2009-01, Vol.20 (3), p.035302-035302 (4)

2009

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Aquaculture development in India from a global perspective

Current science (Bangalore), 1999-02, Vol.76 (3), p.333-341

Kutty, M. N.

1999

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Heterojunction bandgap engineered photodetector based on type-II InAs/GaSb superlattice for single color and bicolor infrared detection

Infrared physics & technology, 2011-05, Vol.54 (3), p.273-277

2011

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Device Characteristics of GaInSb/AlGaSb Quantum Well Lasers Monolithically Grown on GaAs Substrates by Using an Interfacial Misfit Array

Journal of electronic materials, 2008-12, Vol.37 (12), p.1758-1763

2008

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Post-etching mesa surface composition investigation of InAs/GaSb type-II strained layer superlattices using XPS characterization

Infrared physics & technology, 2015-05, Vol.70, p.66-69

2015

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Monolithically Integrated III-Sb-Based Laser Diodes Grown on Miscut Si Substrates

IEEE journal of selected topics in quantum electronics, 2009-05, Vol.15 (3), p.716-723

2009

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Compensation of interfacial states located inside the "buffer-free"GaSb/GaAs (001) heterojunction via δ -doping

Applied physics letters, 2009-08, Vol.95 (7), p.072109-072109-3

2009

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Investigation of multistack InAs/InGaAs/GaAs self-assembled quantum dots-in-double-well structures for infrared detectors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-05, Vol.28 (3), p.C3-C3G7

2010

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Room-temperature lasing at 1.82μm of GaInSb∕AlGaSb quantum wells grown on GaAs substrates using an interfacial misfit array

Applied physics letters, 2007-10, Vol.91 (14)

2007

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Performance improvement of longwave infrared photodetectorbased on type-II InAs/GaSb superlattices using unipolar currentblocking layers

Applied physics letters, 2010-06, Vol.96 (23), p.231107-231107-3

2010

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Towards sustainable freshwater prawn aquaculture lessons from shrimp farming, with special reference to India

Aquaculture research, 2005-02, Vol.36 (3), p.255-263

Kutty, M.N

2005

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Effects of pentachlorophenol (NaPCP) on survival, activity and metabolism in Rhinomugil corsula (Hamilton), Cyprinus carpio (Linnaeus) and Tilapia mossambica (Peters)

Hydrobiologia, 1983-01, Vol.107 (1), p.19-24

1983

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Room-Temperature Operation of Buffer-Free GaSb-AlGaSb Quantum-Well Diode Lasers Grown on a GaAs Platform Emitting at 1.65 [mu]m

IEEE photonics technology letters, 2007-10, Vol.19 (20), p.1628-1630

2007

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Room-temperature lasing at 1.82 μ m of Ga In Sb ∕ Al Ga Sb quantum wells grown on GaAs substrates using an interfacial misfit array

Applied physics letters, 2007-10, Vol.91 (14), p.141102-141102-3

2007

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Aquaculture in South East Asia: Some points of emphasis

Aquaculture, 1980-01, Vol.20 (3), p.159-168

Kutty, M.N

1980

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Varshni parameters for InAs/GaSb strained layer superlattice infrared photodetectors

Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers

Study of Surface Treatments on InAs/GaSb Superlattice LWIR Detectors

Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices

Lateral diffusion of minority carriers in InAsSb-based nBn detectors

Monolithically integrated III-Sb CW super-luminal light emitting diodes on non-miscut Si (100) substrates

Passivation of long-wave infrared InAs/GaSb strained layer superlattice detectors

Performance improvement of long-wave infrared InAs/GaSb strained-layer superlattice detectors through sulfur-based passivation

Electronic characteristics of the interfacial states embedded in"buffer-free" GaSb/GaAs (001) heterojunctions

GaSb quantum-well-based "buffer-free" vertical light emitting diode monolithically embedded within a GaAs cavity incorporating interfacial misfit arrays

Fabrication and characteristics of broad-area light-emitting diode based on nanopatterned quantum dots

Aquaculture development in India from a global perspective

Heterojunction bandgap engineered photodetector based on type-II InAs/GaSb superlattice for single color and bicolor infrared detection

Device Characteristics of GaInSb/AlGaSb Quantum Well Lasers Monolithically Grown on GaAs Substrates by Using an Interfacial Misfit Array

Post-etching mesa surface composition investigation of InAs/GaSb type-II strained layer superlattices using XPS characterization

Monolithically Integrated III-Sb-Based Laser Diodes Grown on Miscut Si Substrates

Compensation of interfacial states located inside the "buffer-free"GaSb/GaAs (001) heterojunction via δ -doping

Investigation of multistack InAs/InGaAs/GaAs self-assembled quantum dots-in-double-well structures for infrared detectors

Room-temperature lasing at 1.82μm of GaInSb∕AlGaSb quantum wells grown on GaAs substrates using an interfacial misfit array

Performance improvement of longwave infrared photodetectorbased on type-II InAs/GaSb superlattices using unipolar currentblocking layers

Towards sustainable freshwater prawn aquaculture lessons from shrimp farming, with special reference to India

Effects of pentachlorophenol (NaPCP) on survival, activity and metabolism in Rhinomugil corsula (Hamilton), Cyprinus carpio (Linnaeus) and Tilapia mossambica (Peters)

Room-Temperature Operation of Buffer-Free GaSb-AlGaSb Quantum-Well Diode Lasers Grown on a GaAs Platform Emitting at 1.65 [mu]m

Room-temperature lasing at 1.82 μ m of Ga In Sb ∕ Al Ga Sb quantum wells grown on GaAs substrates using an interfacial misfit array

Aquaculture in South East Asia: Some points of emphasis

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