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Signature of weak-antilocalization in sputtered topological insulator Bi2Se3 thin films with varying thickness

Scientific reports, 2022-06, Vol.12 (1), p.9770-10, Article 9770

2022

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Influence of laser repetition rate on the structural and optical properties of GaN layers grown on sapphire (0001) by laser molecular beam epitaxy

CrystEngComm, 2016-01, Vol.18 (5), p.744-753

2016

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Structural, optical and electronic properties of homoepitaxial GaN nanowalls grown on GaN template by laser molecular beam epitaxy

RSC advances, 2015-01, Vol.5 (17), p.87818-8783

2015

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Laser molecular beam epitaxy of vertically self-assembled GaN nanorods on Ta metal foil: role of growth temperature and laser repetition rate

CrystEngComm, 2019, Vol.21 (36), p.5448-5454

2019

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Structural, Electronic and Thermoelectric Properties of Bi2Se3 Thin Films Deposited by RF Magnetron Sputtering

Journal of electronic materials, 2022-05, Vol.51 (5), p.2500-2509

2022

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Fabrication of ultra-violet photodetector on laser MBE grown epitaxial GaN nanowalls on sapphire (11–20)

Journal of materials research, 2023-01, Vol.38 (2), p.429-438

2023

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Effect of surface modification and laser repetition rate on growth, structural, electronic and optical properties of GaN nanorods on flexible Ti metal foil

RSC advances, 2020-01, Vol.1 (4), p.2113-2122

2020

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Structural and optical properties of sputtered Bi2Se3 thin films on sapphire (0001), quartz and GaN/sapphire (0001)

Journal of materials research, 2023-04, Vol.38 (7), p.1780-1791

2023

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Correlation of crystalline and optical properties with UV photodetector characteristics of GaN grown by laser molecular beam epitaxy on a-sapphire

Applied physics. A, Materials science & processing, 2022-11, Vol.128 (11), Article 989

2022

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Laser molecular beam epitaxy growth of porous GaN nanocolumn and nanowall network on sapphire (0001) for high responsivity ultraviolet photodetectors

Journal of alloys and compounds, 2019-01, Vol.770, p.572-581

2019

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Self-Induced Growth of GaN Nanowall Structure on Si (111) by Laser Molecular Beam Epitaxy

Journal of nanoscience and nanotechnology, 2020-06, Vol.20 (6), p.3919-3924

2020

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Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target

AIP advances, 2013-09, Vol.3 (9), p.092109-092109-10

2013

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Annealing modified surface morphology and electrical transport behavior of nebulized spray pyrolysis deposited LaNiO3 and NdNiO3 thin films

Indian journal of physics, 2023-08, Vol.97 (9), p.2657-2668

2023

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Excitation Density Dependent Photoluminescence Studies on Homo-Epitaxial GaN Nanowall Networks Grown by Laser Assisted Molecular Beam Epitaxy

Journal of nanoscience and nanotechnology, 2020-06, Vol.20 (6), p.3866-3872

2020

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Role of growth temperature on formation of single crystalline GaN nanorods on flexible titanium foil by laser molecular beam epitaxy

Journal of crystal growth, 2019-03, Vol.509, p.23-28

2019

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Facile Synthesis of Semiconducting Ultrathin Layer of Molybdenum Disulfide

Journal of nanoscience and nanotechnology, 2018-01, Vol.18 (1), p.614-622

2018

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Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

AIP advances, 2014-02, Vol.4 (2), p.027114-027114-9

2014

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Influence of substrate nitridation on properties of GaN nanorods grown on molybdenum foil by laser molecular beam epitaxy

Physica. B, Condensed matter, 2020-08, Vol.591, p.412255, Article 412255

2020

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Low Temperature Growth of GaN Epitaxial Layers on Sapphire (0001) by Pulsed Laser Deposition Using Liquid Gallium Target

Science of advanced materials, 2014-06, Vol.6 (6), p.1215-1220

2014

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Effect of nitridation temperature on formation and properties of GaN nanowall networks on sapphire (0 0 0 1) grown by laser MBE

Materials science & engineering. B, Solid-state materials for advanced technology, 2018-05, Vol.231, p.105-114

2018

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Nanomaterials for Energy and Sensor Applications

1, 2024

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Structural and optical properties of low temperature grown single crystalline GaN nanorods on flexible tungsten foil using laser molecular beam epitaxy

Materials research express, 2019-06, Vol.6 (8), p.85919

2019

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Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy

Applied physics letters, 2011-02, Vol.98 (7), p.072902-072902-3

2011

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Quantum confinement effect in low temperature grown homo-epitaxial GaN nanowall network by laser assisted molecular beam epitaxy

Journal of alloys and compounds, 2017-05, Vol.703, p.466-476

2017

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Detection of dislocation-related midgap levels in pulsed laser deposited GaN by photo-induced current transient spectroscopy

physica status solidi (b), 2015-04, Vol.252 (4), p.800-803

2015

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Signature of weak-antilocalization in sputtered topological insulator Bi2Se3 thin films with varying thickness

Influence of laser repetition rate on the structural and optical properties of GaN layers grown on sapphire (0001) by laser molecular beam epitaxy

Structural, optical and electronic properties of homoepitaxial GaN nanowalls grown on GaN template by laser molecular beam epitaxy

Laser molecular beam epitaxy of vertically self-assembled GaN nanorods on Ta metal foil: role of growth temperature and laser repetition rate

Structural, Electronic and Thermoelectric Properties of Bi2Se3 Thin Films Deposited by RF Magnetron Sputtering

Fabrication of ultra-violet photodetector on laser MBE grown epitaxial GaN nanowalls on sapphire (11–20)

Effect of surface modification and laser repetition rate on growth, structural, electronic and optical properties of GaN nanorods on flexible Ti metal foil

Structural and optical properties of sputtered Bi2Se3 thin films on sapphire (0001), quartz and GaN/sapphire (0001)

Correlation of crystalline and optical properties with UV photodetector characteristics of GaN grown by laser molecular beam epitaxy on a-sapphire

Laser molecular beam epitaxy growth of porous GaN nanocolumn and nanowall network on sapphire (0001) for high responsivity ultraviolet photodetectors

Self-Induced Growth of GaN Nanowall Structure on Si (111) by Laser Molecular Beam Epitaxy

Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target

Annealing modified surface morphology and electrical transport behavior of nebulized spray pyrolysis deposited LaNiO3 and NdNiO3 thin films

Excitation Density Dependent Photoluminescence Studies on Homo-Epitaxial GaN Nanowall Networks Grown by Laser Assisted Molecular Beam Epitaxy

Role of growth temperature on formation of single crystalline GaN nanorods on flexible titanium foil by laser molecular beam epitaxy

Facile Synthesis of Semiconducting Ultrathin Layer of Molybdenum Disulfide

Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

Influence of substrate nitridation on properties of GaN nanorods grown on molybdenum foil by laser molecular beam epitaxy

Low Temperature Growth of GaN Epitaxial Layers on Sapphire (0001) by Pulsed Laser Deposition Using Liquid Gallium Target

Effect of nitridation temperature on formation and properties of GaN nanowall networks on sapphire (0 0 0 1) grown by laser MBE

Nanomaterials for Energy and Sensor Applications

Structural and optical properties of low temperature grown single crystalline GaN nanorods on flexible tungsten foil using laser molecular beam epitaxy

Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy

Quantum confinement effect in low temperature grown homo-epitaxial GaN nanowall network by laser assisted molecular beam epitaxy

Detection of dislocation-related midgap levels in pulsed laser deposited GaN by photo-induced current transient spectroscopy

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