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Complex permittivities of breast tumor tissues obtained from cancer surgeries

Applied physics letters, 2014-06, Vol.104 (25)

2014

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Threshold voltage instability and hysteresis in gamma-rays irradiated 4H-SiC junction field effect transistors

Journal of applied physics, 2022-06, Vol.131 (24)

2022

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Growth of vanadium doped semi-insulating 4H-SiC epilayer with ultrahigh-resistivity

Journal of applied physics, 2022-06, Vol.131 (24)

2022

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Amplifier Based on 4H-SiC MOSFET Operation at 500 °C for Harsh Environment Applications

IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4194-4199

2022

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IEEE_Xplore

Dependence of thin film transistor characteristics on low-angle grain boundaries of (100)-oriented polycrystalline silicon thin films

Japanese Journal of Applied Physics, 2019-04, Vol.58 (SB), p.SBBJ08

2019

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Formation of epitaxial Ti-Si-C Ohmic contact on 4H-SiC C face using pulsed-laser annealing

Applied physics letters, 2017-06, Vol.110 (25)

2017

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Formation of amorphous alloys on 4H-SiC with NbNi film using pulsed-laser annealing

Applied physics letters, 2016-07, Vol.109 (1)

2016

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High-temperature reliability of Ni/Nb ohmic contacts on 4H-SiC for harsh environment applications

Thin solid films, 2019-01, Vol.669, p.306-314

2019

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500 °C high-temperature reliability of Ni/Nb ohmic contact on n-type 4H-SiC

Japanese Journal of Applied Physics, 2022-03, Vol.61 (3), p.36501

2022

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Influence of Gate Depletion Layer Width on Radiation Resistance of Silicon Carbide Junction Field-Effect Transistors

Quantum beam science, 2023-12, Vol.7 (4), p.31

2023

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Radiation Hardness of 4H-SiC JFETs in MGy Dose Ranges

Materials science forum, 2020-07, Vol.1004, p.1109-1114

2020

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Influence of Ni and Nb thickness on low specific contact resistance and high-temperature reliability of ohmic contacts to 4H-SiC

Japanese Journal of Applied Physics, 2019-11, Vol.58 (11), p.116501

2019

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Observation of Metal-free Phthalocyanine Adsorbed on SiC Reconstructed Surface

e-Journal of Surface Science and Nanotechnology, 2022/08/04, Vol.20(4), pp.257-260

2022

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Thickness dependencies of SiO2/BaOx layers on interfacial properties of a layered gate dielectric on 4H-SiC

Materials science in semiconductor processing, 2021-01, Vol.121, p.105343, Article 105343

2021

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CF4:O2 surface etching for the improvement of contact resistance and high-temperature reliability in Ni/Nb ohmic contacts on n-type 4H-SiC

Japanese Journal of Applied Physics, 2020-04, Vol.59 (5)

2020

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Effect of TMCTS silylation treatments on crosslinking density of low-k zeolite porous silica film

Japanese Journal of Applied Physics, 2019-02, Vol.58 (2), p.21003

2019

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High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits

IEEE transactions on nuclear science, 2017-02, Vol.64 (2), p.852-858

2017

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IEEE_Xplore

Enhanced-oxidation and interface modification on 4H-SiC(0001) substrate using Alkaline earth metal

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Integrated Fabrication Process of Si Microcantilever Using TMAH Solution With Planar Molybdenum Mask

Journal of microelectromechanical systems, 2023-06, Vol.32 (3), p.290-296

2023

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IEEE_Xplore

Hybrid Pixels With Si Photodiode and 4H-SiC MOSFETs Using Direct Heterogeneous Bonding Toward Radiation Hardened CMOS Image Sensors

IEEE electron device letters, 2022-10, Vol.43 (10), p.1713-1716

2022

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Integrated 4H-SiC Photosensors with Active Pixel Sensor-type Circuits for MGy-class Radiation Hardened CMOS UV Image Sensor

IEEE electron device letters, 2023-01, Vol.44 (1), p.1-1

2023

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Flexible and compact perspiration-monitoring system with 0.18 μm BCD process and PDMS micro air-flow path

Japanese Journal of Applied Physics, 2023-04, Vol.62 (SC), p.SC1078

2023

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Study of interface-trap and near-interface-state distribution in a 4H-SiC MOS capacitor with the full-distributed circuit model

Japanese Journal of Applied Physics, 2024-01, Vol.63 (1), p.15503

2024

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High-temperature reliability of integrated circuit based on 4H-SiC MOSFET with Ni/Nb ohmic contacts for harsh environment applications

Japanese Journal of Applied Physics, 2020-12, Vol.59 (12), p.126504

2020

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Gamma-ray irradiation-induced mobility enhancement of 4H-SiC NMOSFETs with a Ba-silicate interface layer

Japanese Journal of Applied Physics, 2019-08, Vol.58 (8), p.81007

2019

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Complex permittivities of breast tumor tissues obtained from cancer surgeries

Threshold voltage instability and hysteresis in gamma-rays irradiated 4H-SiC junction field effect transistors

Growth of vanadium doped semi-insulating 4H-SiC epilayer with ultrahigh-resistivity

Amplifier Based on 4H-SiC MOSFET Operation at 500 °C for Harsh Environment Applications

Dependence of thin film transistor characteristics on low-angle grain boundaries of (100)-oriented polycrystalline silicon thin films

Formation of epitaxial Ti-Si-C Ohmic contact on 4H-SiC C face using pulsed-laser annealing

Formation of amorphous alloys on 4H-SiC with NbNi film using pulsed-laser annealing

High-temperature reliability of Ni/Nb ohmic contacts on 4H-SiC for harsh environment applications

500 °C high-temperature reliability of Ni/Nb ohmic contact on n-type 4H-SiC

Influence of Gate Depletion Layer Width on Radiation Resistance of Silicon Carbide Junction Field-Effect Transistors

Radiation Hardness of 4H-SiC JFETs in MGy Dose Ranges

Influence of Ni and Nb thickness on low specific contact resistance and high-temperature reliability of ohmic contacts to 4H-SiC

Observation of Metal-free Phthalocyanine Adsorbed on SiC Reconstructed Surface

Thickness dependencies of SiO2/BaOx layers on interfacial properties of a layered gate dielectric on 4H-SiC

CF4:O2 surface etching for the improvement of contact resistance and high-temperature reliability in Ni/Nb ohmic contacts on n-type 4H-SiC

Effect of TMCTS silylation treatments on crosslinking density of low-k zeolite porous silica film

High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits

Enhanced-oxidation and interface modification on 4H-SiC(0001) substrate using Alkaline earth metal

Integrated Fabrication Process of Si Microcantilever Using TMAH Solution With Planar Molybdenum Mask

Hybrid Pixels With Si Photodiode and 4H-SiC MOSFETs Using Direct Heterogeneous Bonding Toward Radiation Hardened CMOS Image Sensors

Integrated 4H-SiC Photosensors with Active Pixel Sensor-type Circuits for MGy-class Radiation Hardened CMOS UV Image Sensor

Flexible and compact perspiration-monitoring system with 0.18 μm BCD process and PDMS micro air-flow path

Study of interface-trap and near-interface-state distribution in a 4H-SiC MOS capacitor with the full-distributed circuit model

High-temperature reliability of integrated circuit based on 4H-SiC MOSFET with Ni/Nb ohmic contacts for harsh environment applications

Gamma-ray irradiation-induced mobility enhancement of 4H-SiC NMOSFETs with a Ba-silicate interface layer

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