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Real-time observation of fast and highly reliable magnetization switching in Voltage-Control Spintronics Memory (VoCSM)

Applied physics letters, 2019-05, Vol.114 (19)

2019

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Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height

Applied physics letters, 2017-06, Vol.110 (25)

2017

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HDlive imaging of circumvallate placenta

Ultrasound in obstetrics & gynecology, 2015-10, Vol.46 (4), p.513-514

2015

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Voltage-Control Spintronics Memory With a Self-Aligned Heavy-Metal Electrode

IEEE transactions on magnetics, 2017-11, Vol.53 (11), p.1-4

2017

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IEEE_Xplore

Improvement of Write Efficiency in Voltage-Controlled Spintronic Memory by development of a Ta − B Spin Hall Electrode

Physical review applied, 2018-10, Vol.10 (4), Article 044011

2018

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Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology

IEEE electron device letters, 2000-05, Vol.21 (5), p.230-232

2000

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IEEE_Xplore

Ultra-High-Efficiency Writing in Voltage-Control Spintronics Memory (VoCSM): The Most Promising Embedded Memory for Deep Learning

IEEE journal of the Electron Devices Society, 2018, Vol.6, p.1233-1238

2018

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Long-Term Outcomes of Infantile Sacrococcygeal Teratoma: Results from a Multi-Institutional Retrospective Observational Study in Japan

Journal of pediatric surgery, 2024-04, Vol.59 (4), p.587-592

2024

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235: Can We Defer a Type and Screen for Pregnant Patients With Vaginal Bleeding Who “Know” Their Blood Type?

Annals of emergency medicine, 2009, Vol.54 (3), p.S73-S74

2009

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Advanced SOI p-MOSFETs with strained-Si channel on SiGe-on-insulator substrate fabricated by SIMOX technology

IEEE transactions on electron devices, 2001-08, Vol.48 (8), p.1612-1618

2001

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IEEE_Xplore

Formation of strained-silicon layer on thin relaxed-SiGe/SiO2/Si structure using SIMOX technology

Thin solid films, 2000-07, Vol.369 (1-2), p.199-202

2000

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Device structure and electrical characteristics of strained-Si-on-insulator (strained-SOI) MOSFETs

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-02, Vol.89 (1), p.426-434

2002

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Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers

IEEE journal of quantum electronics, 1985-12, Vol.21 (12), p.1958-1963

1985

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IEEE_Xplore

Transport and single-particle relaxation times of a deformed wavefunction in a back-gated GaAs-AlGaAs heterostructure

Semiconductor science and technology, 1993-05, Vol.8 (5), p.742-746

Kurobe, A

1993

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Fabrication of high mobility in situ back-gated (311)A hole gas heterojunctions

Applied physics letters, 1997-05, Vol.70 (20), p.2750-2752

1997

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Association of serum adiponectin with asthma and pulmonary function in the Japanese population

ENDOCRINE JOURNAL, 2015-08, Vol.62 (8), p.695-709

2015

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Transport properties of two-dimensional electron gas in a strained-Si/SiGe heterostructure at low carrier densities

Thin solid films, 2000-07, Vol.369 (1-2), p.328-332

2000

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Are Sexual Assault Victims Presenting to the Emergency Department in a Timely Manner?

Social work (New York), 2015-01, Vol.60 (1), p.29-33

2015

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小児反復性中耳炎に対する十全大補湯の有用性に関する多施設共同ランダム化比較試験

日本耳鼻咽喉科学会会報, 2018/02/20, Vol.121(2), pp.157-158

2018

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Formation of strained-silicon layer on thin relaxed-SiGe/SiO 2 /Si structure using SIMOX technology

Thin solid films, 2000-07, Vol.369 (1-2), p.199-202

2000

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Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density

2016 IEEE International Electron Devices Meeting (IEDM), 2016, p.27.6.1-27.6.4

2016

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IEEE_Xplore

Calamitic and discotic mesophases formed by kinetically controlled rod–disc alternation of molecular shape in a triphenylene–azobenzene mesogenic system

Chemical communications (Cambridge, England), 2003 (14), p.1676-1677

2003

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Band filling in GaAs/AlGaAs multiquantum well lasers and its effect on the threshold current

IEEE journal of quantum electronics, 1989-06, Vol.25 (6), p.1161-1170

1989

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IEEE_Xplore

Effects of well number, cavity length, and facet reflectivity on the reduction of threshold current of GaAs/AlGaAs multiquantum well lasers

IEEE journal of quantum electronics, 1988-04, Vol.24 (4), p.635-640

1988

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IEEE_Xplore

Simulation of saturation and relaxation of intersubband absorption in doped quantum wells

Applied physics letters, 1988-12, Vol.53 (25), p.2516-2518

1988

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Real-time observation of fast and highly reliable magnetization switching in Voltage-Control Spintronics Memory (VoCSM)

Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height

HDlive imaging of circumvallate placenta

Voltage-Control Spintronics Memory With a Self-Aligned Heavy-Metal Electrode

Improvement of Write Efficiency in Voltage-Controlled Spintronic Memory by development of a Ta − B Spin Hall Electrode

Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology

Ultra-High-Efficiency Writing in Voltage-Control Spintronics Memory (VoCSM): The Most Promising Embedded Memory for Deep Learning

Long-Term Outcomes of Infantile Sacrococcygeal Teratoma: Results from a Multi-Institutional Retrospective Observational Study in Japan

235: Can We Defer a Type and Screen for Pregnant Patients With Vaginal Bleeding Who “Know” Their Blood Type?

Advanced SOI p-MOSFETs with strained-Si channel on SiGe-on-insulator substrate fabricated by SIMOX technology

Formation of strained-silicon layer on thin relaxed-SiGe/SiO2/Si structure using SIMOX technology

Device structure and electrical characteristics of strained-Si-on-insulator (strained-SOI) MOSFETs

Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers

Transport and single-particle relaxation times of a deformed wavefunction in a back-gated GaAs-AlGaAs heterostructure

Fabrication of high mobility in situ back-gated (311)A hole gas heterojunctions

Association of serum adiponectin with asthma and pulmonary function in the Japanese population

Transport properties of two-dimensional electron gas in a strained-Si/SiGe heterostructure at low carrier densities

Are Sexual Assault Victims Presenting to the Emergency Department in a Timely Manner?

小児反復性中耳炎に対する十全大補湯の有用性に関する多施設共同ランダム化比較試験

Formation of strained-silicon layer on thin relaxed-SiGe/SiO 2 /Si structure using SIMOX technology

Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density

Calamitic and discotic mesophases formed by kinetically controlled rod–disc alternation of molecular shape in a triphenylene–azobenzene mesogenic system

Band filling in GaAs/AlGaAs multiquantum well lasers and its effect on the threshold current

Effects of well number, cavity length, and facet reflectivity on the reduction of threshold current of GaAs/AlGaAs multiquantum well lasers

Simulation of saturation and relaxation of intersubband absorption in doped quantum wells

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