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Inflammation enhances Y1 receptor signaling, neuropeptide Y-mediated inhibition of hyperalgesia, and substance P release from primary afferent neurons

Neuroscience, 2014-01, Vol.256, p.178-194

2014

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Extended Swimming Exercise Reduces Inflammatory and Peripheral Neuropathic Pain in Rodents

The journal of pain, 2007-12, Vol.8 (12), p.989-997

2007

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Y1 receptor knockout increases nociception and prevents the anti-allodynic actions of NPY

Nutrition (Burbank, Los Angeles County, Calif.), 2008-09, Vol.24 (9), p.885-891

2008

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Carbohydrate supplementation attenuates muscle glycogen loss during acute bouts of resistance exercise

International journal of sport nutrition and exercise metabolism, 2000-09, Vol.10 (3), p.326-339

2000

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Liquid phase epitaxy

Applied Physics A Solids and Surfaces, 1991-06, Vol.52 (6), p.380-409

KUPHAL, E

1991

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The effects of supplemental carbohydrate ingestion on intermittent isokinetic leg exercise

Journal of sports medicine and physical fitness, 2001-06, Vol.41 (2), p.216

2001

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Phase diagrams of InGaAsP, InGaAs and InP lattice-matched to (100)InP

Journal of crystal growth, 1984-08, Vol.67 (3), p.441-457

Kuphal, E.

1984

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Validation of a single-day maximal lactate steady state assessment protocol

Journal of sports medicine and physical fitness, 2004-06, Vol.44 (2), p.132

2004

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Very high compositional homogeneity of 1.55 μm strain-compensated InGaAsP MQW structures by MOVPE under N2 atmosphere

Journal of crystal growth, 1998-12, Vol.195 (1-4), p.637-643

1998

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Deep level spectroscopy and schottky barrier characteristics of InP

Physica status solidi. A, Applied research, 1981-06, Vol.65 (2), p.583-588

1981

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Low resistance ohmic contacts to n- and p-InP

Solid-state electronics, 1981, Vol.24 (1), p.69-78

Kuphal, E.

1981

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Higher yield of 1.55 μm DFB lasers through MOVPE growth under N 2 atmosphere with excellent homogeneity

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-12, Vol.66 (1), p.111-117

1999

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Relation between photoluminescence wavelength and lattice mismatch in metalorganic vapor-phase epitaxy InGaAs/InP

Journal of applied physics, 1993-05, Vol.73 (9), p.4599-4604

1993

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Higher yield of 1.55 μm DFB lasers through MOVPE growth under N2 atmosphere with excellent homogeneity

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-12, Vol.66 (1-3), p.111-117

1999

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Nearly back-dissolution-free LPE growth from Sn solutions over gratings for DFB lasers

Electronics letters, 1989-01, Vol.25 (23), p.1581-1583

Kuphal, E.

1989

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Properties of InGaAs/InP thermoelectric and surface bulk micromachined infrared sensors

Applied physics letters, 1996-11, Vol.69 (20), p.3039-3041

1996

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Phase diagram and LPE growth of strongly Sn- and Te-doped InGaAs

Applied Physics A Solids and Surfaces, 1994-10, Vol.59 (4), p.441-443

KUPHAL, E

1994

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Laser diodes with integrated spot-size transformer as low-cost optical transmitter elements for telecommunications

IEEE journal of selected topics in quantum electronics, 1997-12, Vol.3 (6), p.1372-1383

1997

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Variation of coupling coefficients by sampled gratings in complex coupled distributed-feedback lasers

IEEE journal of selected topics in quantum electronics, 1995-06, Vol.1 (2), p.341-345, Article 341

1995

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Preparation and characterization of LPE InP

Journal of crystal growth, 1981-01, Vol.54 (1), p.117-126

Kuphal, E.

1981

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The influence of graphite boat material on the purity of LPE InGaAs

Applied Physics A Solids and Surfaces, 1987-05, Vol.43 (1), p.37-40

KUPHAL, E

1987

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The role of hydrogen in low-temperature MOVPE growth and carbon doping of In0.53Ga0.47As for InP-based HBT

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.287-291

1997

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MOVPE growth for an integrated InGaAs/InP PIN-HBT receiver using Zn-doped p+-InGaAs layers

Journal of crystal growth, 1997, Vol.170 (1-4), p.451-455

1997

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Properties of loss-coupled distributed feedback laser arrays for wavelength division multiplexing systems

Journal of lightwave technology, 1997-07, Vol.15 (7), p.1191-1197

1997

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Ohmic Pd/Zn/Au/LaB6/Au contacts on p-type In0.53Ga0.47As: Electrical and metallurgical properties

Journal of applied physics, 1998-07, Vol.84 (2), p.861-869

1998

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Inflammation enhances Y1 receptor signaling, neuropeptide Y-mediated inhibition of hyperalgesia, and substance P release from primary afferent neurons

Extended Swimming Exercise Reduces Inflammatory and Peripheral Neuropathic Pain in Rodents

Y1 receptor knockout increases nociception and prevents the anti-allodynic actions of NPY

Carbohydrate supplementation attenuates muscle glycogen loss during acute bouts of resistance exercise

Liquid phase epitaxy

The effects of supplemental carbohydrate ingestion on intermittent isokinetic leg exercise

Phase diagrams of InGaAsP, InGaAs and InP lattice-matched to (100)InP

Validation of a single-day maximal lactate steady state assessment protocol

Very high compositional homogeneity of 1.55 μm strain-compensated InGaAsP MQW structures by MOVPE under N2 atmosphere

Deep level spectroscopy and schottky barrier characteristics of InP

Low resistance ohmic contacts to n- and p-InP

Higher yield of 1.55 μm DFB lasers through MOVPE growth under N 2 atmosphere with excellent homogeneity

Relation between photoluminescence wavelength and lattice mismatch in metalorganic vapor-phase epitaxy InGaAs/InP

Higher yield of 1.55 μm DFB lasers through MOVPE growth under N2 atmosphere with excellent homogeneity

Nearly back-dissolution-free LPE growth from Sn solutions over gratings for DFB lasers

Properties of InGaAs/InP thermoelectric and surface bulk micromachined infrared sensors

Phase diagram and LPE growth of strongly Sn- and Te-doped InGaAs

Laser diodes with integrated spot-size transformer as low-cost optical transmitter elements for telecommunications

Variation of coupling coefficients by sampled gratings in complex coupled distributed-feedback lasers

Preparation and characterization of LPE InP

The influence of graphite boat material on the purity of LPE InGaAs

The role of hydrogen in low-temperature MOVPE growth and carbon doping of In0.53Ga0.47As for InP-based HBT

MOVPE growth for an integrated InGaAs/InP PIN-HBT receiver using Zn-doped p+-InGaAs layers

Properties of loss-coupled distributed feedback laser arrays for wavelength division multiplexing systems

Ohmic Pd/Zn/Au/LaB6/Au contacts on p-type In0.53Ga0.47As: Electrical and metallurgical properties

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