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III–Nitride UV Devices

Japanese Journal of Applied Physics, 2005-10, Vol.44 (10R), p.7191

2005

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Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells

Applied physics letters, 2002-02, Vol.80 (6), p.977-979

2002

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Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm

Applied physics letters, 2002-12, Vol.81 (23), p.4392-4394

2002

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Confocal spectroscopy of InGaN LED structures

Journal of physics. D, Applied physics, 2011-04, Vol.44 (13), p.135104

2011

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Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells

Applied physics letters, 2002-11, Vol.81 (22), p.4130-4132

2002

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Role of alloy fluctuations in photoluminescence dynamics of AlGaN epilayers

Applied physics letters, 2006-06, Vol.88 (26), p.261905-261905-3

2006

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Pulsed atomic layer epitaxy of quaternary AlInGaN layers

Applied physics letters, 2001-08, Vol.79 (7), p.925-927

2001

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Near-band-edge photoluminescence of wurtzite-type AlN

Applied physics letters, 2002-10, Vol.81 (15), p.2755-2757

2002

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Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN

Applied physics letters, 2002-12, Vol.81 (24), p.4658-4660

2002

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Photoluminescence dynamics of AlGaN quantum wells with built-in electric fields and localized states

Physica status solidi. A, Applications and materials science, 2010-02, Vol.207 (2), p.423-427

2010

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GaN/AlGaN multiple quantum wells on a -plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices

Applied physics letters, 2003-09, Vol.83 (13), p.2599-2601

2003

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High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes

Journal of electronic materials, 2003-05, Vol.32 (5), p.364-370

2003

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Luminescence mechanisms in quaternary AlxInyGa1−x−yN materials

Applied physics letters, 2002-05, Vol.80 (20), p.3730-3732

2002

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GaN homoepitaxy on freestanding (11̄00) oriented GaN substrates

Applied physics letters, 2002-10, Vol.81 (17), p.3194-3196

2002

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Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN

Applied physics letters, 2004-02, Vol.84 (5), p.696-698

2004

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Exciton and carrier motion in quaternary AlInGaN

Applied physics letters, 2003-06, Vol.82 (25), p.4501-4503

2003

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Visible light-emitting diodes using a -plane GaN–InGaN multiple quantum wells over r -plane sapphire

Applied physics letters, 2004-05, Vol.84 (18), p.3663-3665

2004

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Internal polarization fields in GaN∕AlGaN multiple quantum wells with different crystallographic orientations

Journal of applied physics, 2005-05, Vol.97 (10)

2005

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Low-temperature operation of AlGaN single-quantum-well light-emitting diodes with deep ultraviolet emission at 285 nm

Applied physics letters, 2002-10, Vol.81 (16), p.2938-2940

2002

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Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells

Applied physics letters, 2001-12, Vol.79 (26), p.4375-4377

2001

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Study of spectral and recombination characteristics of HVPE GaN grown on ammono substrates

Materials science in semiconductor processing, 2019-03, Vol.91, p.341-355

2019

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Room-temperature optically pumped laser emission from a -plane GaN with high optical gain characteristics

Applied physics letters, 2004-04, Vol.84 (16), p.2998-3000

2004

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Well-width-dependent carrier lifetime in AlGaN∕AlGaN quantum wells

Applied physics letters, 2007-03, Vol.90 (13)

2007

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Screening dynamics of intrinsic electric field in AlGaN quantum wells

Applied physics letters, 2008-02, Vol.92 (6), p.061907-061907-3

2008

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Time-resolved photoluminescence of quaternary AlInGaN-based multiple quantum wells

Applied physics letters, 2002-05, Vol.80 (21), p.3943-3945

2002

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III–Nitride UV Devices

Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells

Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm

Confocal spectroscopy of InGaN LED structures

Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells

Role of alloy fluctuations in photoluminescence dynamics of AlGaN epilayers

Pulsed atomic layer epitaxy of quaternary AlInGaN layers

Near-band-edge photoluminescence of wurtzite-type AlN

Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN

Photoluminescence dynamics of AlGaN quantum wells with built-in electric fields and localized states

GaN/AlGaN multiple quantum wells on a -plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices

High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes

Luminescence mechanisms in quaternary AlxInyGa1−x−yN materials

GaN homoepitaxy on freestanding (11̄00) oriented GaN substrates

Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN

Exciton and carrier motion in quaternary AlInGaN

Visible light-emitting diodes using a -plane GaN–InGaN multiple quantum wells over r -plane sapphire

Internal polarization fields in GaN∕AlGaN multiple quantum wells with different crystallographic orientations

Low-temperature operation of AlGaN single-quantum-well light-emitting diodes with deep ultraviolet emission at 285 nm

Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells

Study of spectral and recombination characteristics of HVPE GaN grown on ammono substrates

Room-temperature optically pumped laser emission from a -plane GaN with high optical gain characteristics

Well-width-dependent carrier lifetime in AlGaN∕AlGaN quantum wells

Screening dynamics of intrinsic electric field in AlGaN quantum wells

Time-resolved photoluminescence of quaternary AlInGaN-based multiple quantum wells

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