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Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs

IEEE transactions on electron devices, 2012-02, Vol.59 (2), p.292-301

2012

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A Dopingless FET With Metal-Insulator-Semiconductor Contacts

IEEE electron device letters, 2017-01, Vol.38 (1), p.5-8

2017

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Fabrication of Vertically Stacked Nanosheet Junctionless Field-Effect Transistors and Applications for the CMOS and CFET Inverters

IEEE transactions on electron devices, 2020-09, Vol.67 (9), p.3504-3509

2020

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Subthreshold Swing Saturation of Nanoscale MOSFETs Due to Source-to-Drain Tunneling at Cryogenic Temperatures

IEEE electron device letters, 2020-09, Vol.41 (9), p.1-1

2020

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Optimization of Gate-on-Source-Only Tunnel FETs With Counter-Doped Pockets

IEEE transactions on electron devices, 2012-08, Vol.59 (8), p.2070-2077

2012

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Device simulations with A U-Net model predicting physical quantities in two-dimensional landscapes

Scientific reports, 2023-01, Vol.13 (1), p.731-731, Article 731

2023

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Impacts of the Shell Doping Profile on the Electrical Characteristics of Junctionless FETs

IEEE transactions on electron devices, 2015-11, Vol.62 (11), p.3541-3546

2015

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Quantum Mechanical Performance Predictions of p-n-i-n Versus Pocketed Line Tunnel Field-Effect Transistors

IEEE transactions on electron devices, 2013-07, Vol.60 (7), p.2128-2134

2013

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Impact of Nanosheet Thickness on Performance and Reliability of Polycrystalline-Silicon Thin-Film Transistors With Double-Gate Operation

IEEE transactions on nanotechnology, 2023, Vol.22, p.740-746

2023

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Inherent Dipole Layer Formation Driven by Surface Energy at Nonplanar Dielectric Interface

IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.294-298

2021

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Significance of Multivalley and Nonparabolic Band Structure for GeSn TFET Simulation

IEEE transactions on electron devices, 2018-10, Vol.65 (10), p.4709-4715

2018

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Counterdoped Pocket Thickness Optimization of Gate-on-Source-Only Tunnel FETs

IEEE transactions on electron devices, 2013-01, Vol.60 (1), p.6-12

2013

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Undoped and Doped Junctionless FETs: Source/Drain Contacts and Immunity to Random Dopant Fluctuation

IEEE electron device letters, 2017-06, Vol.38 (6), p.708-711

2017

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Impact of Semiconductor Permittivity Reduction on Electrical Characteristics of Nanoscale MOSFETs

IEEE transactions on electron devices, 2019-06, Vol.66 (6), p.2509-2512

2019

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Improving the Electrical Performance of a Quantum Well FET With a Shell Doping Profile by Heterojunction Optimization

IEEE transactions on electron devices, 2017-09, Vol.64 (9), p.3563-3568

2017

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First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.2101-2107

2022

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First Demonstration of Ferroelectric Tunnel Thin-Film Transistor Nonvolatile Memory With Polycrystalline-Silicon Channel and HfZrO } Gate Dielectric

IEEE transactions on electron devices, 2022-11, Vol.69 (11), p.1-6

2022

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Impacts of pulse conditions on endurance behavior of ferroelectric thin-film transistor non-volatile memory

Semiconductor science and technology, 2023-03, Vol.38 (3), p.35020

2023

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Demonstration of synaptic characteristics of polycrystalline-silicon ferroelectric thin-film transistor for application of neuromorphic computing

Semiconductor science and technology, 2022-04, Vol.37 (4), p.45003

2022

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Insight into Latchup Risk in 28nm Planar Bulk Technology for Quantum Computing Applications

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.1-7

2024

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Junctionless FETs With a Fin Body for Multi- } and Dynamic Threshold Operation

IEEE transactions on electron devices, 2018-08, Vol.65 (8), p.3535-3542

2018

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Modeling the impact of junction angles in tunnel field-effect transistors

Solid-state electronics, 2012-03, Vol.69, p.31-37

2012

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Investigation of the passivation-induced VTH shift in p-GaN HEMTs with Au-free gate-first process

Microelectronics and reliability, 2021-07, Vol.122, p.114150, Article 114150

2021

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A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors

Applied physics letters, 2012-05, Vol.100 (19), p.193509-193509-4

2012

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Impact of the polarization on time-dependent dielectric breakdown in ferroelectric Hf0.5Zr0.5O2 on Ge substrates

Japanese Journal of Applied Physics, 2020-04, Vol.59, p.1

2020

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Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs

A Dopingless FET With Metal-Insulator-Semiconductor Contacts

Fabrication of Vertically Stacked Nanosheet Junctionless Field-Effect Transistors and Applications for the CMOS and CFET Inverters

Subthreshold Swing Saturation of Nanoscale MOSFETs Due to Source-to-Drain Tunneling at Cryogenic Temperatures

Optimization of Gate-on-Source-Only Tunnel FETs With Counter-Doped Pockets

Device simulations with A U-Net model predicting physical quantities in two-dimensional landscapes

Impacts of the Shell Doping Profile on the Electrical Characteristics of Junctionless FETs

Quantum Mechanical Performance Predictions of p-n-i-n Versus Pocketed Line Tunnel Field-Effect Transistors

Impact of Nanosheet Thickness on Performance and Reliability of Polycrystalline-Silicon Thin-Film Transistors With Double-Gate Operation

Inherent Dipole Layer Formation Driven by Surface Energy at Nonplanar Dielectric Interface

Significance of Multivalley and Nonparabolic Band Structure for GeSn TFET Simulation

Counterdoped Pocket Thickness Optimization of Gate-on-Source-Only Tunnel FETs

Undoped and Doped Junctionless FETs: Source/Drain Contacts and Immunity to Random Dopant Fluctuation

Impact of Semiconductor Permittivity Reduction on Electrical Characteristics of Nanoscale MOSFETs

Improving the Electrical Performance of a Quantum Well FET With a Shell Doping Profile by Heterojunction Optimization

First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications

First Demonstration of Ferroelectric Tunnel Thin-Film Transistor Nonvolatile Memory With Polycrystalline-Silicon Channel and HfZrO } Gate Dielectric

Impacts of pulse conditions on endurance behavior of ferroelectric thin-film transistor non-volatile memory

Demonstration of synaptic characteristics of polycrystalline-silicon ferroelectric thin-film transistor for application of neuromorphic computing

Insight into Latchup Risk in 28nm Planar Bulk Technology for Quantum Computing Applications

Junctionless FETs With a Fin Body for Multi- } and Dynamic Threshold Operation

Modeling the impact of junction angles in tunnel field-effect transistors

Investigation of the passivation-induced VTH shift in p-GaN HEMTs with Au-free gate-first process

A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors

Impact of the polarization on time-dependent dielectric breakdown in ferroelectric Hf0.5Zr0.5O2 on Ge substrates

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