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GaN-based micro-LED arrays on flexible substrates for optical cochlear implants

Journal of physics. D, Applied physics, 2014-05, Vol.47 (20), p.1-6

2014

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Tunable light emission from nitrogen-vacancy centers in single crystal diamond PIN diodes

Applied physics letters, 2013-04, Vol.102 (15)

2013

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Reduced nonthermal rollover of wide-well GaInN light-emitting diodes

Applied physics letters, 2009-01, Vol.94 (4), p.041103-041103-3

2009

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Reduction of the threading edge dislocation density in AlGaN epilayers by GaN nucleation for efficient 350 nm light emitting diodes

Physica status solidi. B. Basic research, 2010-07, Vol.247 (7), p.1710-1712

2010

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Influence of sample thickness and concentration of Ce dopant on the optical properties of YAG:Ce ceramic phosphors for white LEDs

Journal of materials research, 2014-10, Vol.29 (19), p.2318-2324

2014

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High Power Efficiency AlGaN-Based Ultraviolet Light-Emitting Diodes

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JG16-08JG16-4

2013

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Aluminum–germanium wafer bonding of (AlGaIn)N thin-film light-emitting diodes

Microsystem technologies : sensors, actuators, systems integration, 2013-05, Vol.19 (5), p.655-659

2013

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Laser Repair of Defects in GaN LEDs

Optik & Photonik, 2018-06, Vol.13 (3), p.43-45

2018

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Ultraviolet laser ablation as technique for defect repair of GaN-based light-emitting diodes

Applied physics. A, Materials science & processing, 2018-03, Vol.124 (3), p.1-5, Article 257

2018

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Towards a deeper understanding of the reduced efficiency droop in low defect-density GaInN wide-well LEDs

Physica status solidi. C, 2010-07, Vol.7 (7-8), p.2148-2150

2010

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Microstructural and optical emission properties of diamond multiply twinned particles

Journal of applied physics, 2020-01, Vol.127 (2)

2020

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GaN doped with beryllium—An effective light converter for white light emitting diodes

Applied physics letters, 2013-07, Vol.103 (1)

2013

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Laser Repair of Defects in GaN LEDs: Excimer laser defect ablation is the optimum method for repairing the two major LED types

Optik & Photonik, 2018-06, Vol.13 (3), p.43-45

2018

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Laser Repair of Defects in GaN LEDs

Optik & Photonik, 2018-06, Vol.13 (3), p.43-45

2018

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Improved AlGaN p-i-n Photodetectors for Monitoring of Ultraviolet Radiation

IEEE journal of selected topics in quantum electronics, 2014-11, Vol.20 (6), p.166-172

2014

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Sub-surface channels in sapphire made by ultraviolet picosecond laser irradiation and selective etching

Optics express, 2011-11, Vol.19 (24), p.24738-24745

2011

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Line beam processing for laser lift-off of GaN from sapphire

Physica status solidi. A, Applications and materials science, 2012-12, Vol.209 (12), p.2653-2658

2012

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Laser direct writing of GaN-based light-emitting diodes—The suitable laser source for mesa definition

Journal of applied physics, 2013-03, Vol.113 (10)

2013

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Design, Fabrication, and Characterization of Near-Milliwatt-Power RCLEDs Emitting at 390 nm

IEEE photonics journal, 2013-12, Vol.5 (6), p.8400709-8400709

2013

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Luminance and current distribution of hybrid circular GaN-based resonant-cavity light-emitting diodes with lateral current injection on the n- and p-side

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.817-820

2014

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Aluminum―germanium wafer bonding of (AlGaIn)N thin-film light-emitting diodes : WaferBond'11, International Conference on Wafer Bonding for Microsystems, 3D- and Wafer Level Integration

Microsystem technologies : sensors, actuators, systems integration, 2013, Vol.19 (5), p.655-659

2013

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Thin film LEDs gaining ground: Excimer laser lift‐off enables high brightness LED production

Laser-Technik-Journal, 2011-05, Vol.8 (3), p.48-52

2011

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Thin film LEDs gaining ground

Laser-Technik-Journal, 2011-05, Vol.8 (3), p.48-52

2011

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SIMS depth profiling of Mg back-diffusion in (AlGaIn)N light-emitting diodes

Journal of materials science. Materials in electronics, 2008-12, Vol.19 (Suppl 1), p.176-181

2008

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Effect of In incorporation into the quantum well active region on the efficiency of AlGaN-based ultraviolet light-emitting diodes

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.794-797

2012

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GaN-based micro-LED arrays on flexible substrates for optical cochlear implants

Tunable light emission from nitrogen-vacancy centers in single crystal diamond PIN diodes

Reduced nonthermal rollover of wide-well GaInN light-emitting diodes

Reduction of the threading edge dislocation density in AlGaN epilayers by GaN nucleation for efficient 350 nm light emitting diodes

Influence of sample thickness and concentration of Ce dopant on the optical properties of YAG:Ce ceramic phosphors for white LEDs

High Power Efficiency AlGaN-Based Ultraviolet Light-Emitting Diodes

Aluminum–germanium wafer bonding of (AlGaIn)N thin-film light-emitting diodes

Laser Repair of Defects in GaN LEDs

Ultraviolet laser ablation as technique for defect repair of GaN-based light-emitting diodes

Towards a deeper understanding of the reduced efficiency droop in low defect-density GaInN wide-well LEDs

Microstructural and optical emission properties of diamond multiply twinned particles

GaN doped with beryllium—An effective light converter for white light emitting diodes

Laser Repair of Defects in GaN LEDs: Excimer laser defect ablation is the optimum method for repairing the two major LED types

Laser Repair of Defects in GaN LEDs

Improved AlGaN p-i-n Photodetectors for Monitoring of Ultraviolet Radiation

Sub-surface channels in sapphire made by ultraviolet picosecond laser irradiation and selective etching

Line beam processing for laser lift-off of GaN from sapphire

Laser direct writing of GaN-based light-emitting diodes—The suitable laser source for mesa definition

Design, Fabrication, and Characterization of Near-Milliwatt-Power RCLEDs Emitting at 390 nm

Luminance and current distribution of hybrid circular GaN-based resonant-cavity light-emitting diodes with lateral current injection on the n- and p-side

Aluminum―germanium wafer bonding of (AlGaIn)N thin-film light-emitting diodes : WaferBond'11, International Conference on Wafer Bonding for Microsystems, 3D- and Wafer Level Integration

Thin film LEDs gaining ground: Excimer laser lift‐off enables high brightness LED production

Thin film LEDs gaining ground

SIMS depth profiling of Mg back-diffusion in (AlGaIn)N light-emitting diodes

Effect of In incorporation into the quantum well active region on the efficiency of AlGaN-based ultraviolet light-emitting diodes

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