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Metal-to-insulator transition in platinum group compounds

Rare metals, 2024, Vol.43 (8), p.3460-3474

2024

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Batch synthesis of rare-earth nickelates electronic phase transition perovskites via rare-earth processing intermediates

Rare metals, 2022, Vol.41 (10), p.3495-3503

2022

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Robust interface-induced unusual anomalous Hall effect in Mn3Sn/Pt bilayers

Rare metals, 2022-09, Vol.41 (9), p.3012-3018

2022

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Influence of thickness on current-induced magnetization switching in L10-FePt single layer

中国物理B（英文版）, 2021-11, Vol.30 (10), p.500-505

2021

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The role of nitridation of nc-Si dots for improving performance of nc-Si nonvolatile memory

Journal of non-crystalline solids, 2012-09, Vol.358 (17), p.2344-2347

2012

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Large-Scale Synthesis of Single-Crystalline RE2O3 (RE=Y, Dy, Ho, Er) Nanobelts by a Solid-Liquid-Phase Chemical Route

Chemistry : a European journal, 2008-02, Vol.14 (5), p.1615-1620

2008

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Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices

Chinese physics B, 2016-09, Vol.25 (9), p.518-522

于杰陈坤基马忠元张鑫鑫江小帆吴仰晴黄信凡 Shunri Oda

2016

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Effect of water vapour on the interface reaction between carbon brick and molten iron in blast furnace hearth

Ironmaking & steelmaking, 2023-09, Vol.ahead-of-print (ahead-of-print), p.1-10

2023

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Room-Temperature Multi-Peak NDR in nc-Si Quantum-Dot Stacking MOS Structures for Multiple Value Memory and Logic

Chinese physics letters, 2013-07, Vol.30 (7), p.077303-1-077303-4

2013

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The Effect of Multiple Interface States and nc-Si Dots in a Nc-Si Floating Gate MOS Structure Measured by their G — V Characteristics

Chinese physics letters, 2013-07, Vol.30 (7), p.77307-1-077307-4

2013

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Subband Light Emission from Phosphorous-Doped Amorphous Si/SiO2 Multilayers at Room Temperature

Chinese physics letters, 2011-06, Vol.28, p.067802

2011

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Two-Dimensional Cavity Resonant Modes of Si Based Bragg Reflection Ridge Waveguide

Chinese physics letters, 2011-06, Vol.28 (6), p.066803

2011

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Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment

Chinese physics letters, 2010-08, Vol.27 (8), p.180-182

张贤高陈坤基方忠慧钱昕晔刘广元江小帆马忠元徐骏黄信凡计建新何飞宋矿宝张俊万辉王荣华

2010

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Observation of Coulomb Oscillations with Single Dot Characteristics in Heavy Doped Ultra Thin SOI Nanowires

Chinese physics letters, 2010-05, Vol.27 (5), p.231-233, Article 057304

方忠慧张贤高陈坤基钱昕晔徐骏黄信凡何飞

2010

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Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded nickel nanoparticles for the application of nonvolatile memory

Chinese physics B, 2010-04, Vol.19 (4), p.047308-047308

2010

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Structural, Eelectronic and Optical Properties of Ultra-thin Hydrogenated Amorphous Germanium Films

Faguang xuebao, 2011-11, Vol.32 (11), p.1165-1170

2011

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Origin of Electron and Hole Charging Current Peaks in Nanocrystal-Si Quantum Dot Floating Gate MOS Structure

Chinese physics letters, 2009-03, Vol.26 (3), p.037301, Article 037301

2009

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Strong Green Light Emission from Low-Temperature Grown a-SiNx:H Film after Different Oxidation Routes

Chinese physics letters, 2008-11, Vol.25, p.4147

2008

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Fabrication of large-scale periodic silicon nanopillar arrays for 2D nanomold using modified nanosphere lithography

Applied surface science, 2007-09, Vol.253 (22), p.9035-9038

2007

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Eigenmode Splitting in all Hydrogenated Amorphous Silicon Nitride Coupled Microcavity

Chinese physics letters, 2008-05, Vol.25 (5), p.1888-1890

2008

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Hydrogen Passivation Effect on Enhanced Luminescence from Nanocrystalline Si/SiO2 Multilayers

Chinese physics letters, 2007-09, Vol.24, p.2657

2007

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The origin of blue photoluminescence from nc-Si/SiO2 multilayers

Chinese physics B, 2008-01, Vol.17, p.303

2008

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Simulation of localized surface plasmon resonance of hexagonal Ag nanoarrays and amorphous oxidized silicon nitride

Wuli xuebao, 2015-09, Vol.64 (17), p.177301

2015

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Correlation between Light Emissions from Amorphous-Si:H/SiO2 and nc-Si/SiO2 Multilayers

Chinese physics letters, 2007-07, Vol.24, p.2064

2007

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Dependence of annealing temperatures on the optimized resistive switching behavior from SiOx (x=1.3) films

Wuli xuebao, 2014-08, Vol.63 (16), p.167201

2014

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Metal-to-insulator transition in platinum group compounds

Batch synthesis of rare-earth nickelates electronic phase transition perovskites via rare-earth processing intermediates

Robust interface-induced unusual anomalous Hall effect in Mn3Sn/Pt bilayers

Influence of thickness on current-induced magnetization switching in L10-FePt single layer

The role of nitridation of nc-Si dots for improving performance of nc-Si nonvolatile memory

Large-Scale Synthesis of Single-Crystalline RE2O3 (RE=Y, Dy, Ho, Er) Nanobelts by a Solid-Liquid-Phase Chemical Route

Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices

Effect of water vapour on the interface reaction between carbon brick and molten iron in blast furnace hearth

Room-Temperature Multi-Peak NDR in nc-Si Quantum-Dot Stacking MOS Structures for Multiple Value Memory and Logic

The Effect of Multiple Interface States and nc-Si Dots in a Nc-Si Floating Gate MOS Structure Measured by their G — V Characteristics

Subband Light Emission from Phosphorous-Doped Amorphous Si/SiO2 Multilayers at Room Temperature

Two-Dimensional Cavity Resonant Modes of Si Based Bragg Reflection Ridge Waveguide

Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment

Observation of Coulomb Oscillations with Single Dot Characteristics in Heavy Doped Ultra Thin SOI Nanowires

Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded nickel nanoparticles for the application of nonvolatile memory

Structural, Eelectronic and Optical Properties of Ultra-thin Hydrogenated Amorphous Germanium Films

Origin of Electron and Hole Charging Current Peaks in Nanocrystal-Si Quantum Dot Floating Gate MOS Structure

Strong Green Light Emission from Low-Temperature Grown a-SiNx:H Film after Different Oxidation Routes

Fabrication of large-scale periodic silicon nanopillar arrays for 2D nanomold using modified nanosphere lithography

Eigenmode Splitting in all Hydrogenated Amorphous Silicon Nitride Coupled Microcavity

Hydrogen Passivation Effect on Enhanced Luminescence from Nanocrystalline Si/SiO2 Multilayers

The origin of blue photoluminescence from nc-Si/SiO2 multilayers

Simulation of localized surface plasmon resonance of hexagonal Ag nanoarrays and amorphous oxidized silicon nitride

Correlation between Light Emissions from Amorphous-Si:H/SiO2 and nc-Si/SiO2 Multilayers

Dependence of annealing temperatures on the optimized resistive switching behavior from SiOx (x=1.3) films

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