UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

High-power and efficiency W-band InAlGaN/AlN/GaN high-electron-mobility transistors for future high-capacity wireless communications

Applied physics express, 2024-08, Vol.17 (8), p.86504

2024

Volltextzugriff (PDF)

High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

IEICE transactions on electronics, 2023-11, Vol.E106.C (11), p.661-668, Article 2023MMP0005

2023

Volltextzugriff (PDF)

Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier

IEICE transactions on electronics, 2023-10, Vol.E106.C (10), p.605-613, Article 2022ECP5046

2023

Volltextzugriff (PDF)

High Output Power and Efficiency 300-GHz Band InP-Based MOS-HEMT Power Amplifiers With Composite-Channel and Double-Side Doping

IEEE journal of the Electron Devices Society, 2024, Vol.12, p.965-973

2024

Volltextzugriff (PDF)

Correlation between Structural and Photoelectrochemical Properties of GaN Porous Nanostructures Formed by Photo-Assisted Electrochemical Etching

Journal of the Electrochemical Society, 2014-01, Vol.161 (10), p.H705-H709

2014

Volltextzugriff (PDF)

Thermal Design of GaN-on-GaN HEMT Power Amplifier for a Selective Heating Microwave Oven

IEEE transactions on components, packaging, and manufacturing technology (2011), 2021-11, Vol.11 (11), p.1909-1916

2021

Volltextzugriff (PDF)

First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm −1 output power density

Applied physics express, 2021-04, Vol.14 (4), p.41004

2021

Volltextzugriff (PDF)

Over 80% power-added-efficiency GaN high-electron-mobility transistors on free-standing GaN substrates

Applied physics express, 2021-01, Vol.14 (1), p.16502

2021

Volltextzugriff (PDF)

Investigation on optical absorption properties of electrochemically formed porous InP using photoelectric conversion devices

Applied surface science, 2013-08, Vol.279, p.116-120

2013

Volltextzugriff (PDF)

Bias-dependent Photoabsorption Properties of GaN Porous Structures under Back-side Illumination

ECS transactions, 2015-09, Vol.69 (2), p.161-166

2015

Volltextzugriff (PDF)

Electrochemical formation of N-type GaN and N-type InP porous structures for chemical sensor applications

2016 IEEE SENSORS, 2016, p.1-3

2016

Volltextzugriff (PDF)

Precise Structural Control of GaN Porous Nanostructures Utilizing Anisotropic Electrochemical and Chemical Etching for the Optical and Photoelectrochemical Applications

Journal of the Electrochemical Society, 2017-01, Vol.164 (7), p.H477-H483

2017

Volltextzugriff (PDF)

Low-Resistance and Low-Thermal-Budget Ohmic Contact by Introducing Periodic Microstructures for AlGaN/AlN/GaN HEMTs

IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.3073-3078

2022

Volltextzugriff (PDF)

Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process

Journal of applied physics, 2017-05, Vol.121 (18)

2017

Volltextzugriff (PDF)

Improved f T /f max in wide bias range by steam-annealed ultrathin-Al 2 O 3 gate dielectrics for InP-based high-electron-mobility transistors

Applied physics express, 2022-04, Vol.15 (4), p.41001

2022

Volltextzugriff (PDF)

Effect of oxidant sources on carbon-related impurities in ALD-Al 2 O 3 for solid-state devices

Applied physics express, 2023-09, Vol.16 (9), p.91001

2023

Volltextzugriff (PDF)

Formation of GaN porous structures with improved structural controllability by photoassisted electrochemical etching

Japanese Journal of Applied Physics, 2016-04, Vol.55 (4S), p.4

2016

Volltextzugriff (PDF)

Deep GaN through-substrate via etching using Cl2/BCl3 inductively coupled plasma

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-12, Vol.38 (6)

2020

Volltextzugriff (PDF)

High-Efficiency 250-320 GHz Power Amplifiers Using InP-based MOS-HEMTs

2022 Asia-Pacific Microwave Conference (APMC), 2022, p.276-278

2022

Volltextzugriff (PDF)

Large photocurrents in GaN porous structures with a redshift of the photoabsorption edge

Semiconductor science and technology, 2016-01, Vol.31 (1), p.14012

2016

Volltextzugriff (PDF)

Thermally stable and low trap density SiNx/AlON bi-layer structure for AlGaN/GaN MIS-HEMTs

Japanese Journal of Applied Physics, 2020-04, Vol.59 (4)

2020

Volltextzugriff (PDF)

Thermally stable and low trap density SiN x /AlON bi-layer structure for AlGaN/GaN MIS-HEMTs

Japanese Journal of Applied Physics, 2020-04, Vol.59 (4), p.46505

2020

Volltextzugriff (PDF)

Effect of Tin Addition and Humidity on Electrical Properties of Phosphate Glass

Denki Gakkai ronbunshi. A, Kiso zairyÅ, 2015-09, Vol.135 (9), p.553-554

2015

Volltextzugriff (PDF)

Formation of GaN-Porous Structures Using Photo-Assisted Electrochemical Process in Back-Side Illumination Mode

ECS electrochemistry letters, 2015-03, Vol.4 (5), p.H11-H13

2015

Volltextzugriff (PDF)

Formation and Photoelectrical Measurements of Pt Schottky Interfaces on InP Porous Structures

ECS transactions, 2013, Vol.50 (37), p.247-252

2013

Volltextzugriff (PDF)

1 – 25 von 66

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(50)
Mit Volltextzugriff
(45)

Publikationsform

Artikel
(61)
Tagungsberichte
(5)

Sprache

Englisch
(62)
Japanisch
(9)

Erscheinungsjahr

n.n

Thema

Science & Technology
(28)
Physical Sciences
(13)
Life Sciences & Biomedicine
(12)
Humans
(10)
Cardiovascular
(9)
Technology
(9)
Physics
(8)
Physics, Applied
(7)
Gan
(6)
Materials Science
(6)
Power Amplifiers
(6)
Engineering
(5)
Engineering, Electrical & Electronic
(5)
Female
(5)
Gallium Nitrides
(5)
High Electron Mobility Transistors
(5)
High-Electron-Mobility Transistor
(5)
Internal Medicine
(5)
Oncology
(5)
Porous Structure
(5)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

High-power and efficiency W-band InAlGaN/AlN/GaN high-electron-mobility transistors for future high-capacity wireless communications

High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier

High Output Power and Efficiency 300-GHz Band InP-Based MOS-HEMT Power Amplifiers With Composite-Channel and Double-Side Doping

Correlation between Structural and Photoelectrochemical Properties of GaN Porous Nanostructures Formed by Photo-Assisted Electrochemical Etching

Thermal Design of GaN-on-GaN HEMT Power Amplifier for a Selective Heating Microwave Oven

First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm −1 output power density

Over 80% power-added-efficiency GaN high-electron-mobility transistors on free-standing GaN substrates

Investigation on optical absorption properties of electrochemically formed porous InP using photoelectric conversion devices

Bias-dependent Photoabsorption Properties of GaN Porous Structures under Back-side Illumination

Electrochemical formation of N-type GaN and N-type InP porous structures for chemical sensor applications

Precise Structural Control of GaN Porous Nanostructures Utilizing Anisotropic Electrochemical and Chemical Etching for the Optical and Photoelectrochemical Applications

Low-Resistance and Low-Thermal-Budget Ohmic Contact by Introducing Periodic Microstructures for AlGaN/AlN/GaN HEMTs

Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process

Improved f T /f max in wide bias range by steam-annealed ultrathin-Al 2 O 3 gate dielectrics for InP-based high-electron-mobility transistors

Effect of oxidant sources on carbon-related impurities in ALD-Al 2 O 3 for solid-state devices

Formation of GaN porous structures with improved structural controllability by photoassisted electrochemical etching

Deep GaN through-substrate via etching using Cl2/BCl3 inductively coupled plasma

High-Efficiency 250-320 GHz Power Amplifiers Using InP-based MOS-HEMTs

Large photocurrents in GaN porous structures with a redshift of the photoabsorption edge

Thermally stable and low trap density SiNx/AlON bi-layer structure for AlGaN/GaN MIS-HEMTs

Thermally stable and low trap density SiN x /AlON bi-layer structure for AlGaN/GaN MIS-HEMTs

Effect of Tin Addition and Humidity on Electrical Properties of Phosphate Glass

Formation of GaN-Porous Structures Using Photo-Assisted Electrochemical Process in Back-Side Illumination Mode

Formation and Photoelectrical Measurements of Pt Schottky Interfaces on InP Porous Structures

Suchergebnisse filtern