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Two-dimensional analytical modeling of fully depleted DMG SOI MOSFET and evidence for diminished SCEs

IEEE transactions on electron devices, 2004-04, Vol.51 (4), p.569-574

2004

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Interleukin-18-induced atherosclerosis involves CD36 and NF-κB crosstalk in Apo E−/− mice

Journal of cardiology, 2015-07, Vol.66 (1), p.28-35

2015

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A new dual-material double-gate (DMDG) nanoscale SOI MOSFET-two-dimensional analytical modeling and simulation

IEEE transactions on nanotechnology, 2005-03, Vol.4 (2), p.260-268

2005

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Investigation of the novel attributes of a fully depleted dual-material gate SOI MOSFET

IEEE transactions on electron devices, 2004-09, Vol.51 (9), p.1463-1467

2004

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A novel sonochemical synthesis of nano-size silicon nitride and titanium carbide

Ceramics international, 2015-11, Vol.41 (9), p.11301-11305

2015

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A Stepped Oxide Hetero-Material Gate Trench Power MOSFET for Improved Performance

IEEE transactions on electron devices, 2009-06, Vol.56 (6), p.1355-1359

2009

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Dual-Material-Gate Technique for Enhanced Transconductance and Breakdown Voltage of Trench Power MOSFETs

IEEE transactions on electron devices, 2009-03, Vol.56 (3), p.517-522

2009

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New dual-material SG nanoscale MOSFET: analytical threshold-voltage model

IEEE transactions on electron devices, 2006-04, Vol.53 (4), p.920-922

2006

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A simple analytical threshold voltage model of nanoscale single-layer fully depleted strained-silicon-on-insulator MOSFETs

IEEE transactions on electron devices, 2006-10, Vol.53 (10), p.2500-2506

2006

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Two-dimensional analytical threshold voltage model of nanoscale fully depleted SOI MOSFET with electrically induced S/D extensions

IEEE transactions on electron devices, 2005-07, Vol.52 (7), p.1568-1575

2005

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A New Strained-Silicon Channel Trench-Gate Power MOSFET: Design and Analysis

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.3299-3304

2008

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Compact modeling of the effects of parasitic internal fringe capacitance on the threshold voltage of high-k gate-dielectric nanoscale SOI MOSFETs

IEEE transactions on electron devices, 2006-04, Vol.53 (4), p.706-711

2006

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Compact Surface Potential Model for FD SOI MOSFET Considering Substrate Depletion Region

IEEE transactions on electron devices, 2008-03, Vol.55 (3), p.789-795

2008

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A New Buried-Oxide-In-Drift-Region Trench MOSFET With Improved Breakdown Voltage

IEEE electron device letters, 2009-09, Vol.30 (9), p.990-992

2009

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A super beta bipolar transistor using SiGe-base surface accumulation layer transistor(SALTran) concept: a simulation study

IEEE transactions on electron devices, 2006-03, Vol.53 (3), p.577-579

2006

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Essential oil of Tridax procumbens L induces apoptosis and suppresses angiogenesis and lung metastasis of the B16F-10 cell line in C57BL/6 mice

Asian Pacific journal of cancer prevention : APJCP, 2012-01, Vol.13 (11), p.5887-5895

2012

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Low-temperature sonochemical synthesis of high dielectric Lanthanum doped Cerium oxide nanopowder

Journal of alloys and compounds, 2018-06, Vol.748, p.348-354

2018

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Critical aspects of neurodevelopment

Neurobiology of learning and memory, 2021-04, Vol.180, p.107415-107415, Article 107415

2021

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New Schottky-Gate Bipolar-Mode Field-Effect Transistor (SBMFET): Design and Analysis Using Two-Dimensional Simulation

IEEE transactions on electron devices, 2006-09, Vol.53 (9), p.2364-2369

2006

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A new high breakdown voltage lateral Schottky collector bipolar transistor on SOI: design and analysis

IEEE transactions on electron devices, 2005-11, Vol.52 (11), p.2496-2501

2005

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A new poly-Si TG-TFT with diminished pseudosubthreshold region: theoretical investigation and analysis

IEEE transactions on electron devices, 2005-08, Vol.52 (8), p.1815-1820

2005

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Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.2813-2819

2008

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A new grounded lamination gate (GLG) for diminished fringe-capacitance effects in high-/spl kappa/ gate-dielectric MOSFETs

IEEE transactions on electron devices, 2006-10, Vol.53 (10), p.2578-2581

2006

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On the parasitic gate capacitance of small-geometry MOSFETs

IEEE transactions on electron devices, 2005-07, Vol.52 (7), p.1676-1677

2005

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A new 4H-SiC lateral merged double Schottky (LMDS) rectifier with excellent forward and reverse characteristics

IEEE transactions on electron devices, 2001-12, Vol.48 (12), p.2695-2700

2001

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Two-dimensional analytical modeling of fully depleted DMG SOI MOSFET and evidence for diminished SCEs

Interleukin-18-induced atherosclerosis involves CD36 and NF-κB crosstalk in Apo E−/− mice

A new dual-material double-gate (DMDG) nanoscale SOI MOSFET-two-dimensional analytical modeling and simulation

Investigation of the novel attributes of a fully depleted dual-material gate SOI MOSFET

A novel sonochemical synthesis of nano-size silicon nitride and titanium carbide

A Stepped Oxide Hetero-Material Gate Trench Power MOSFET for Improved Performance

Dual-Material-Gate Technique for Enhanced Transconductance and Breakdown Voltage of Trench Power MOSFETs

New dual-material SG nanoscale MOSFET: analytical threshold-voltage model

A simple analytical threshold voltage model of nanoscale single-layer fully depleted strained-silicon-on-insulator MOSFETs

Two-dimensional analytical threshold voltage model of nanoscale fully depleted SOI MOSFET with electrically induced S/D extensions

A New Strained-Silicon Channel Trench-Gate Power MOSFET: Design and Analysis

Compact modeling of the effects of parasitic internal fringe capacitance on the threshold voltage of high-k gate-dielectric nanoscale SOI MOSFETs

Compact Surface Potential Model for FD SOI MOSFET Considering Substrate Depletion Region

A New Buried-Oxide-In-Drift-Region Trench MOSFET With Improved Breakdown Voltage

A super beta bipolar transistor using SiGe-base surface accumulation layer transistor(SALTran) concept: a simulation study

Essential oil of Tridax procumbens L induces apoptosis and suppresses angiogenesis and lung metastasis of the B16F-10 cell line in C57BL/6 mice

Low-temperature sonochemical synthesis of high dielectric Lanthanum doped Cerium oxide nanopowder

Critical aspects of neurodevelopment

New Schottky-Gate Bipolar-Mode Field-Effect Transistor (SBMFET): Design and Analysis Using Two-Dimensional Simulation

A new high breakdown voltage lateral Schottky collector bipolar transistor on SOI: design and analysis

A new poly-Si TG-TFT with diminished pseudosubthreshold region: theoretical investigation and analysis

Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology

A new grounded lamination gate (GLG) for diminished fringe-capacitance effects in high-/spl kappa/ gate-dielectric MOSFETs

On the parasitic gate capacitance of small-geometry MOSFETs

A new 4H-SiC lateral merged double Schottky (LMDS) rectifier with excellent forward and reverse characteristics

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