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Ohmic contact to AlN:Si using graded AlGaN contact layer

Applied physics letters, 2019-11, Vol.115 (19)

2019

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High blocking temperature of Fe nanoparticles embedded in diamond thin films

AIP advances, 2022-04, Vol.12 (4), p.045022-045022-6

2022

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Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence

Applied physics letters, 2005-01, Vol.86 (5), p.052105-052105-3

2005

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A new AlON buffer layer for RF-MBE growth of AlN on a sapphire substrate

Journal of crystal growth, 2015-09, Vol.425, p.138-140

2015

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Realization of high-efficiency deep-UV LEDs using transparent p-AlGaN contact layer

Physica status solidi. C, 2013-11, Vol.10 (11), p.1521-1524

2013

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Thermal stability of single crystalline alpha gallium oxide films on sapphire substrates

Physica status solidi. C, 2013-11, Vol.10 (11), p.1592-1595

2013

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Long-range order and thermal stability of thin Co2FeSi films on GaAs(1 1 1)B

Journal of physics. D, Applied physics, 2010-07, Vol.43 (28), p.285404-285404

2010

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High-efficiency green-yellow light-emitting diodes grown on sapphire (0001) substrates

Physica status solidi. C, 2013-11, Vol.10 (11), p.1529-1532

2013

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Epitaxial Heusler alloy Co2FeSi films on Si(1 1 1) substrates grown by molecular beam epitaxy

Journal of physics. D, Applied physics, 2010-08, Vol.43 (30), p.305004-305004

2010

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High current gains obtained by InGaN/GaN double heterojunction bipolar transistors with p-InGaN base

Applied physics letters, 2001-07, Vol.79 (3), p.380-381

2001

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On the possibility of sub 60 mV/decade subthreshold switching in piezoelectric gate barrier transistors

Physica status solidi. C, 2013-11, Vol.10 (11), p.1469-1472

2013

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Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

IEEE electron device letters, 2007-06, Vol.28 (6), p.476-478

2007

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Minority carrier diffusion lengths in MOVPE-grown n- and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors

Journal of crystal growth, 2007, Vol.298, p.787-790

2007

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Doping effects of nanoscale Fe particles on the superconducting properties of powder-in-tube processed MgB2 tapes

Superconductor science & technology, 2006-11, Vol.19 (11), p.1152-1157

2006

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Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack

Physica status solidi. C, 2013-11, Vol.10 (11), p.1421-1425

2013

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Oriented growth of beta gallium oxide thin films on yttrium-stabilized zirconia substrates

Physica status solidi. C, 2013-11, Vol.10 (11), p.1596-1599

2013

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Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition

Physica status solidi. C, 2013-11, Vol.10 (11), p.1426-1429

2013

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Enhancing carrier mobility of IGZO TFT fabricated by non‐vacuum mist CVD with O 3 assistance

Physica status solidi. C, 2013, Vol.10 (11), p.1565-1568

2013

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Short-channel, high-mobility organic thin-film transistors with alkylated dinaphthothienothiophene

Physica status solidi. C, 2013-11, Vol.10 (11), p.1632-1635

2013

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High growth rates of AlN and AlGaN on 8″ silicon wafer using metal-organic vapor phase epitaxy reactor

Physica status solidi. C, 2013-11, Vol.10 (11), p.1353-1356

2013

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Fabrication and characterization of BN/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors with sputtering-deposited BN gate dielectric

Physica status solidi. C, 2013-11, Vol.10 (11), p.1401-1404

2013

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Time-resolved spectroscopy of luminescence in Cu- and Cr-doped β-Ga2O3

Physica status solidi. C, 2013-11, Vol.10 (11), p.1584-1587

2013

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Bending strain effect on critical current of Bi-2223 superconductor tapes—report of international round-robin-test

Physica. C, Superconductivity, 2005-09, Vol.425 (3), p.111-120

2005

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Selective MOVPE growth of GaInAs/InP MQW on directly-bonded InP/Si substrate

Physica status solidi. C, 2013-11, Vol.10 (11), p.1357-1360

2013

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First-principles study of oxygen-doping states in II-VI semiconductors

Physica status solidi. C, 2013-11, Vol.10 (11), p.1385-1388

2013

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Ohmic contact to AlN:Si using graded AlGaN contact layer

High blocking temperature of Fe nanoparticles embedded in diamond thin films

Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence

A new AlON buffer layer for RF-MBE growth of AlN on a sapphire substrate

Realization of high-efficiency deep-UV LEDs using transparent p-AlGaN contact layer

Thermal stability of single crystalline alpha gallium oxide films on sapphire substrates

Long-range order and thermal stability of thin Co2FeSi films on GaAs(1 1 1)B

High-efficiency green-yellow light-emitting diodes grown on sapphire (0001) substrates

Epitaxial Heusler alloy Co2FeSi films on Si(1 1 1) substrates grown by molecular beam epitaxy

High current gains obtained by InGaN/GaN double heterojunction bipolar transistors with p-InGaN base

On the possibility of sub 60 mV/decade subthreshold switching in piezoelectric gate barrier transistors

Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

Minority carrier diffusion lengths in MOVPE-grown n- and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors

Doping effects of nanoscale Fe particles on the superconducting properties of powder-in-tube processed MgB2 tapes

Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack

Oriented growth of beta gallium oxide thin films on yttrium-stabilized zirconia substrates

Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition

Enhancing carrier mobility of IGZO TFT fabricated by non‐vacuum mist CVD with O 3 assistance

Short-channel, high-mobility organic thin-film transistors with alkylated dinaphthothienothiophene

High growth rates of AlN and AlGaN on 8″ silicon wafer using metal-organic vapor phase epitaxy reactor

Fabrication and characterization of BN/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors with sputtering-deposited BN gate dielectric

Time-resolved spectroscopy of luminescence in Cu- and Cr-doped β-Ga2O3

Bending strain effect on critical current of Bi-2223 superconductor tapes—report of international round-robin-test

Selective MOVPE growth of GaInAs/InP MQW on directly-bonded InP/Si substrate

First-principles study of oxygen-doping states in II-VI semiconductors

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