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High-quality MOVPE butt-joint integration of InP/AlGaInAs/InGaAsP-based all-active optical components

Journal of crystal growth, 2014-09, Vol.402, p.243-248

2014

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On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate

Semiconductors (Woodbury, N.Y.), 2017-10, Vol.51 (10), p.1332-1336

2017

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1.5 μm InAs InGaAsP InP quantum dot laser with improved temperature stability

Journal of physics. Conference series, 2016-08, Vol.741 (1), p.12109

2016

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Luminescence and Raman spectra of sol-gel-derived ZnO microcrystals with a high iron content

Glass physics and chemistry, 2012-02, Vol.38 (1), p.143-148

2012

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Metal organic vapor-phase epitaxy of InAs/InGaAsP quantum dots for laser applications at 1.5 μ m

Applied physics letters, 2011-09, Vol.99 (10), p.101106-101106-3

2011

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Crystallographic dependent in-situ CBr4 selective nano-area etching and local regrowth of InP/InGaAs by MOVPE

Journal of crystal growth, 2014-11, Vol.406, p.111-115

2014

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Crystallographic dependent in-situ CBr sub(4) selective nano-area etching and local regrowth of InP/InGaAs by MOVPE

Journal of crystal growth, 2014-11, Vol.406, p.111-115

2014

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Raman scattering in mosaic silicon carbide films

Physics of the solid state, 2010-09, Vol.52 (9), p.1850-1854

2010

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Crystallographic dependent in-situ CBr4 selective nano-area etching and local regrowth of InP/InGaAs by MOVPE

Journal of crystal growth, 2014, Vol.406, p.111-115

2014

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Problems and ways of development of the sports and recreation industry in the context of international sanctions

Putevoditelʹ predprinimatelâ (Online), 2023-04, Vol.16 (2), p.50-55

2023

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Foreign practices of implementing programs on adaptive physical culture

Scientific notes of the Russian academy of entrepreneurship, 2021-04, Vol.20 (1), p.178-188

2021

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Luminescence spectra of hexagonal forms of silicon carbide in mosaic films grown by solid-state epitaxy

Physics of the solid state, 2009-12, Vol.51 (12), p.2469-2473

2009

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Individual optimization of InAlGaAsP-InP sections for 1.55-μm passively mode-locked lasers

ISLC 2012 International Semiconductor Laser Conference, 2012, p.133-134

2012

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Programmno-metodiceskoe soderzanie fiziceskogo vospitanija slabovidjascich i slaboslysascich detej 4-7 let

Teorija i praktika fizic̆eskoj kultury, 2015 (4), p.61-4<61

Kulkova, I. V

2015

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InAs/InGaAsP quantum dots emitting at 1.5 µm for applications in lasers

IPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials, 2011, p.1-4

2011

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Diffusion of Co and Ga in α-Ti

Computational materials science, 2024-09, Vol.244, p.113231, Article 113231

2024

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Effect of boron on the hydrogen-induced grain boundary embrittlement in α-Fe

International journal of hydrogen energy, 2018-01, Vol.43 (3), p.1909-1925

2018

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Oxygen absorption and diffusion in Ti5Si3

Intermetallics, 2022-07, Vol.146, p.107587, Article 107587

2022

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Ab initio investigation of Co/TaC interfaces

Journal of alloys and compounds, 2021-02, Vol.853, p.156944, Article 156944

2021

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First-Principle Investigation of the (001) Surface Reconstructions of GaSb and InSb Semiconductors

Semiconductors (Woodbury, N.Y.), 2020-07, Vol.54 (7), p.742-753

2020

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The Electronic Structure and Magnetic Properties of Full- and Half-Heusler Alloys

Materials transactions, 2006-03, Vol.47 (3), p.599-606

2006

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Impurity influence on the hydrogen diffusivity in B2–TiFe

International journal of hydrogen energy, 2023-01, Vol.48 (1), p.232-242

2023

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Influence of Impurities on Adhesion at the TiAl/Al2O3 Interface

Journal of experimental and theoretical physics, 2023-09, Vol.137 (3), p.362-371

2023

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Adsorption and diffusion of oxygen on γ-TiAl(001) and (100) surfaces

Computational materials science, 2015-02, Vol.97, p.55-63

2015

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Diffusion properties of oxygen in the α2-Ti3Al alloy

Intermetallics, 2021-10, Vol.137, p.107281, Article 107281

2021

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High-quality MOVPE butt-joint integration of InP/AlGaInAs/InGaAsP-based all-active optical components

On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate

1.5 μm InAs InGaAsP InP quantum dot laser with improved temperature stability

Luminescence and Raman spectra of sol-gel-derived ZnO microcrystals with a high iron content

Metal organic vapor-phase epitaxy of InAs/InGaAsP quantum dots for laser applications at 1.5 μ m

Crystallographic dependent in-situ CBr4 selective nano-area etching and local regrowth of InP/InGaAs by MOVPE

Crystallographic dependent in-situ CBr sub(4) selective nano-area etching and local regrowth of InP/InGaAs by MOVPE

Raman scattering in mosaic silicon carbide films

Crystallographic dependent in-situ CBr4 selective nano-area etching and local regrowth of InP/InGaAs by MOVPE

Problems and ways of development of the sports and recreation industry in the context of international sanctions

Foreign practices of implementing programs on adaptive physical culture

Luminescence spectra of hexagonal forms of silicon carbide in mosaic films grown by solid-state epitaxy

Individual optimization of InAlGaAsP-InP sections for 1.55-μm passively mode-locked lasers

Programmno-metodiceskoe soderzanie fiziceskogo vospitanija slabovidjascich i slaboslysascich detej 4-7 let

InAs/InGaAsP quantum dots emitting at 1.5 µm for applications in lasers

Diffusion of Co and Ga in α-Ti

Effect of boron on the hydrogen-induced grain boundary embrittlement in α-Fe

Oxygen absorption and diffusion in Ti5Si3

Ab initio investigation of Co/TaC interfaces

First-Principle Investigation of the (001) Surface Reconstructions of GaSb and InSb Semiconductors

The Electronic Structure and Magnetic Properties of Full- and Half-Heusler Alloys

Impurity influence on the hydrogen diffusivity in B2–TiFe

Influence of Impurities on Adhesion at the TiAl/Al2O3 Interface

Adsorption and diffusion of oxygen on γ-TiAl(001) and (100) surfaces

Diffusion properties of oxygen in the α2-Ti3Al alloy

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