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A new method for Synthesis of Epitaxial Films of Silicon Carbide on Sapphire Substrates (α-Al2O3)

Reviews on advanced materials science, 2018-06, Vol.57 (1), p.82-96

2018

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DIELECTRIC AND PHOTOVOLTAIC PROPERTIES OF HETEROSTRUCTURE SiC/Si

Physical and Chemical Aspects of the Study of Clusters, Nanostructures and Nanomaterials, 2017-12 (9), p.435-441

2017

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Quantum mechanical theory of epitaxial transformation of silicon to silicon carbide

Journal of physics. D, Applied physics, 2017-11, Vol.50 (46), p.464006

2017

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Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review

Physics of the solid state, 2014-08, Vol.56 (8), p.1507-1535

2014

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Formation of composite SiC-C coatings on graphite via annealing Si-melt in CO

Surface & coatings technology, 2021-10, Vol.423, p.127610, Article 127610

2021

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Spiral growth of a multicomponent crystal from vapor of its components

Journal of crystal growth, 2020-10, Vol.548, p.125845, Article 125845

2020

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Nanoscale Raman mapping of elastic stresses in multilayer heterostructure based on multi-period GaN/AlN superlattices grown using HVPE technology on hybrid SiC/Si substrate

Optical materials, 2024-04, Vol.150, p.115184, Article 115184

2024

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Drift mechanism of mass transfer on heterogeneous reaction in crystalline silicon substrate

Physica. B, Condensed matter, 2017-05, Vol.512, p.26-31

2017

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Plasma assisted molecular beam epitaxy of thin GaN films on Si(111) and SiC/Si(111) substrates: Effect of SiC and polarity issues

Thin solid films, 2018-01, Vol.646, p.158-162

2018

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Phase equilibrium in the formation of silicon carbide by topochemical conversion of silicon

Physics of the solid state, 2016-04, Vol.58 (4), p.747-751

2016

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Nanoindentation of GaN/SiC thin films on silicon substrate

The Journal of physics and chemistry of solids, 2017-03, Vol.102, p.151-156

2017

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Comparative studies of nanoscale columnar AlxGa1-xN/AlN heterostructures grown by plasma-assisted molecular-beam epitaxy on cSi, porSi/cSi and SiC/porSi/cSi substrates

Optical materials, 2023-11, Vol.145, p.114451, Article 114451

2023

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Epitaxial growth of zinc oxide by the method of atomic layer deposition on SiC/Si substrates

Physics of the solid state, 2016-07, Vol.58 (7), p.1448-1452

2016

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First-order phase transition through an intermediate state

Physics of the solid state, 2014-04, Vol.56 (4), p.792-800

2014

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Strength and structural properties of AlN films grown on SiC/Si substrates synthesized by atomic substitution

Journal of physics. Conference series, 2019-12, Vol.1410 (1), p.12244

2019

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Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Epitaxial Films Synthesized by Atom Substitution

Semiconductors (Woodbury, N.Y.), 2018-06, Vol.52 (6), p.802-808

2018

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A New Trigonal

Physics of the solid state, 2018-10, Vol.60 (10), p.2066

2018

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Anisotropy of the solid-state epitaxy of silicon carbide in silicon

Semiconductors (Woodbury, N.Y.), 2013-12, Vol.47 (12), p.1551-1555

2013

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Elastic interaction of point defects in cubic and hexagonal crystals

Physics of the solid state, 2016-05, Vol.58 (5), p.971-980

2016

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Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types

Semiconductors (Woodbury, N.Y.), 2017-03, Vol.51 (3), p.396-401

2017

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Pendeo-epitaxy of stress-free AlN layer on a profiled SiC/Si substrate

Thin solid films, 2016-05, Vol.606, p.74-79

2016

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Stability of the surface of an elastically strained multicomponent film in a system with chemical reactions

Physics of the solid state, 2015-12, Vol.57 (12), p.2524-2531

2015

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IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon carbide

Physics of the solid state, 2017-12, Vol.59 (12), p.2430-2435

2017

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Structural and elastoplastic properties of [beta]-[Ga.sub.2][O.sub.3] films grown on hybrid SiC/Si substrates

Continuum mechanics and thermodynamics, 2018-09, Vol.30 (5), p.1059

2018

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X-ray reflectometry and simulation of the parameters of SiC epitaxial films on Si

Physics of the solid state, 2017-05, Vol.59 (5), p.1014

2017

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A new method for Synthesis of Epitaxial Films of Silicon Carbide on Sapphire Substrates (α-Al2O3)

DIELECTRIC AND PHOTOVOLTAIC PROPERTIES OF HETEROSTRUCTURE SiC/Si

Quantum mechanical theory of epitaxial transformation of silicon to silicon carbide

Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review

Formation of composite SiC-C coatings on graphite via annealing Si-melt in CO

Spiral growth of a multicomponent crystal from vapor of its components

Nanoscale Raman mapping of elastic stresses in multilayer heterostructure based on multi-period GaN/AlN superlattices grown using HVPE technology on hybrid SiC/Si substrate

Drift mechanism of mass transfer on heterogeneous reaction in crystalline silicon substrate

Plasma assisted molecular beam epitaxy of thin GaN films on Si(111) and SiC/Si(111) substrates: Effect of SiC and polarity issues

Phase equilibrium in the formation of silicon carbide by topochemical conversion of silicon

Nanoindentation of GaN/SiC thin films on silicon substrate

Comparative studies of nanoscale columnar AlxGa1-xN/AlN heterostructures grown by plasma-assisted molecular-beam epitaxy on cSi, porSi/cSi and SiC/porSi/cSi substrates

Epitaxial growth of zinc oxide by the method of atomic layer deposition on SiC/Si substrates

First-order phase transition through an intermediate state

Strength and structural properties of AlN films grown on SiC/Si substrates synthesized by atomic substitution

Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Epitaxial Films Synthesized by Atom Substitution

A New Trigonal

Anisotropy of the solid-state epitaxy of silicon carbide in silicon

Elastic interaction of point defects in cubic and hexagonal crystals

Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types

Pendeo-epitaxy of stress-free AlN layer on a profiled SiC/Si substrate

Stability of the surface of an elastically strained multicomponent film in a system with chemical reactions

IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon carbide

Structural and elastoplastic properties of [beta]-[Ga.sub.2][O.sub.3] films grown on hybrid SiC/Si substrates

X-ray reflectometry and simulation of the parameters of SiC epitaxial films on Si

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