UB Paderborn / Katalog / Suche / in CDI

Buried-heterostructure mid-infrared quantum cascade lasers fabricated by non-selective regrowth and chemical polishing

Electronics letters, 2015-07, Vol.51 (14), p.1098-1100

2015

Link zum Volltext

Verfügbarkeit prüfen

Characteristics of bulk InGaAsSbN/GaAs grown by metalorganic vapor phase epitaxy (MOVPE)

Journal of crystal growth, 2013-05, Vol.370, p.163-167

2013

Link zum Volltext

Verfügbarkeit prüfen

Effectiveness of in situ NH3 annealing treatments for the removal of oxygen from GaN surfaces

Surface science, 2009-01, Vol.603 (2), p.387-399

2009

Link zum Volltext

Verfügbarkeit prüfen

Effects of antimony (Sb) incorporation on MOVPE grown InAsyP1―y metamorphic buffer layers on InP substrates

Journal of crystal growth, 2011-01, Vol.315 (1), p.96-101

2011

Link zum Volltext

Verfügbarkeit prüfen

Practical Surface Treatments and Surface Chemistry of n-Type and p-Type GaN

Journal of electronic materials, 2008-04, Vol.37 (4), p.439-447

2008

Link zum Volltext

Verfügbarkeit prüfen

Temperature sensitivity of InGaAs quantum-dot lasers grown by MOCVD

IEEE photonics technology letters, 2006-04, Vol.18 (8), p.989-991

2006

Link zum Volltext
IEEE_Xplore

MOCVD-Grown Dilute Nitride Type II Quantum Wells

IEEE journal of selected topics in quantum electronics, 2008-07, Vol.14 (4), p.979-991

2008

Link zum Volltext
IEEE_Xplore

Report on the Meetings of the International Organization for Crystal Growth Executive Council and General Assembly held during ICCG-16/ICVGE-14 in Beijing, People’s Republic of China 8–13 August, 2010

Journal of crystal growth, 2011-03, Vol.318 (1), p.1184-1186

Kuech, T.F.

2011

Link zum Volltext

Verfügbarkeit prüfen

Characteristics of InGaAsN-GaAsSb type-II “W” quantum wells

Journal of crystal growth, , Vol.287 (2), p.615-619

Link zum Volltext

Verfügbarkeit prüfen

GaAsSbN-GaAsSb-InP Type-II "W" Quantum Wells for Mid-IR Emission

IEEE journal of selected topics in quantum electronics, 2007-09, Vol.13 (5), p.1065-1073

2007

Link zum Volltext
IEEE_Xplore

InAsyP1―y metamorphic buffer layers on InP substrates for mid-IR diode lasers

Journal of crystal growth, 2010-04, Vol.312 (8), p.1165-1169

2010

Link zum Volltext

Verfügbarkeit prüfen

Evolution of epilayer tilt in thick In Ga1−As metamorphic buffer layers grown by hydride vapor phase epitaxy

Journal of crystal growth, 2015-09, Vol.426, p.283-286

2015

Link zum Volltext

Verfügbarkeit prüfen

Layer-thickness dependence of the compositions in strained III–V superlattices by atom probe tomography

Journal of crystal growth, 2020-04, Vol.535, p.125550, Article 125550

2020

Link zum Volltext

Verfügbarkeit prüfen

Impact of in-situ annealing on dilute-bismide materials and its application to photovoltaics

Journal of crystal growth, 2016-10, Vol.452, p.276-280

2016

Link zum Volltext

Verfügbarkeit prüfen

InGaAs/AlInAs strain-compensated Superlattices grown on metamorphic buffer layers for low-strain, 3.6μm-emitting quantum-cascade-laser active regions

Journal of crystal growth, 2013-05, Vol.370, p.230-235

2013

Link zum Volltext

Verfügbarkeit prüfen

Impact of growth temperature and substrate orientation on dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application

Journal of crystal growth, 2014-11, Vol.405, p.87-91

2014

Link zum Volltext

Verfügbarkeit prüfen

Regrowth of quantum cascade laser active regions on metamorphic buffer layers

Journal of crystal growth, 2016-10, Vol.452, p.268-271

2016

Link zum Volltext

Verfügbarkeit prüfen

Properties of ‘bulk’ GaAsSbN/GaAs for multi-junction solar cell application: Reduction of carbon background concentration

Journal of crystal growth, 2014-05, Vol.393, p.70-74

2014

Link zum Volltext

Verfügbarkeit prüfen

An examination of the surface decomposition chemistry of lithium niobate precursors under high vacuum conditions

Journal of crystal growth, 2000-08, Vol.217 (3), p.287-301

2000

Link zum Volltext

Verfügbarkeit prüfen

Multitechnique Approach for Determining Energy Levels and Exciton Binding Energies of Molecules for Organic Electronics

Journal of physical chemistry. C, 2016-01, Vol.120 (3), p.1366-1374

2016

Link zum Volltext

Verfügbarkeit prüfen

Grafting of molecular layers to oxidized gallium nitride surfaces via phosphonic acid linkages

Surface science, 2008-07, Vol.602 (14), p.2382-2388

2008

Link zum Volltext

Verfügbarkeit prüfen

PII: S0022-0248(05)00341-6

Journal of crystal growth, 2005, Vol.280 (1), p.1-1

Kuech, T.F.

2005

Link zum Volltext

Verfügbarkeit prüfen

Metalorganic vapor phase growth of quantum well structures on thick metamorphic buffer layers grown by hydride vapor phase epitaxy

Journal of crystal growth, 2013-05, Vol.370, p.293-298

2013

Link zum Volltext

Verfügbarkeit prüfen

PII: S0022-0248(03)02127-4

Journal of crystal growth, 2004, Vol.260 (3), p.vi-vi

Kuech, T.F.

2004

Link zum Volltext

Verfügbarkeit prüfen

Narrow band gap GaInNAsSb material grown by metal organic vapor phase epitaxy (MOVPE) for solar cell applications

Journal of crystal growth, 2011-01, Vol.315 (1), p.68-73

2011

Link zum Volltext

Verfügbarkeit prüfen

Menü

Weitere Dienste

Einstellungen

Buried-heterostructure mid-infrared quantum cascade lasers fabricated by non-selective regrowth and chemical polishing

Characteristics of bulk InGaAsSbN/GaAs grown by metalorganic vapor phase epitaxy (MOVPE)

Effectiveness of in situ NH3 annealing treatments for the removal of oxygen from GaN surfaces

Effects of antimony (Sb) incorporation on MOVPE grown InAsyP1―y metamorphic buffer layers on InP substrates

Practical Surface Treatments and Surface Chemistry of n-Type and p-Type GaN

Temperature sensitivity of InGaAs quantum-dot lasers grown by MOCVD

MOCVD-Grown Dilute Nitride Type II Quantum Wells

Report on the Meetings of the International Organization for Crystal Growth Executive Council and General Assembly held during ICCG-16/ICVGE-14 in Beijing, People’s Republic of China 8–13 August, 2010

Characteristics of InGaAsN-GaAsSb type-II “W” quantum wells

GaAsSbN-GaAsSb-InP Type-II "W" Quantum Wells for Mid-IR Emission

InAsyP1―y metamorphic buffer layers on InP substrates for mid-IR diode lasers

Evolution of epilayer tilt in thick In Ga1−As metamorphic buffer layers grown by hydride vapor phase epitaxy

Layer-thickness dependence of the compositions in strained III–V superlattices by atom probe tomography

Impact of in-situ annealing on dilute-bismide materials and its application to photovoltaics

InGaAs/AlInAs strain-compensated Superlattices grown on metamorphic buffer layers for low-strain, 3.6μm-emitting quantum-cascade-laser active regions

Impact of growth temperature and substrate orientation on dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application

Regrowth of quantum cascade laser active regions on metamorphic buffer layers

Properties of ‘bulk’ GaAsSbN/GaAs for multi-junction solar cell application: Reduction of carbon background concentration

An examination of the surface decomposition chemistry of lithium niobate precursors under high vacuum conditions

Multitechnique Approach for Determining Energy Levels and Exciton Binding Energies of Molecules for Organic Electronics

Grafting of molecular layers to oxidized gallium nitride surfaces via phosphonic acid linkages

PII: S0022-0248(05)00341-6

Metalorganic vapor phase growth of quantum well structures on thick metamorphic buffer layers grown by hydride vapor phase epitaxy

PII: S0022-0248(03)02127-4

Narrow band gap GaInNAsSb material grown by metal organic vapor phase epitaxy (MOVPE) for solar cell applications

Suchergebnisse filtern