UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Investigation into Microwave Absorption in Semiconductors for Frequency-Multiplication Devices and Radiation-Output Control of Continuous and Pulsed Gyrotrons

Semiconductors (Woodbury, N.Y.), 2020-09, Vol.54 (9), p.1069-1074

2020

Volltextzugriff (PDF)

Optically pumped stimulated emission in HgCdTe-based quantum wells: Toward continuous wave lasing in very long-wavelength infrared range

Applied physics letters, 2024-04, Vol.124 (16)

2024

Volltextzugriff (PDF)

Auger recombination in narrow gap HgCdTe/CdHgTe quantum well heterostructures

Journal of applied physics, 2021-04, Vol.129 (13)

2021

Volltextzugriff (PDF)

Highly doped InP as a low loss plasmonic material for mid-IR region

Optics express, 2016-12, Vol.24 (25), p.29077-29088

2016

Volltextzugriff (PDF)

Analysis of the optical gain due to free-to-bound electronic transitions in indium-rich InGaN layers

Journal of applied physics, 2023-12, Vol.134 (21)

2023

Volltextzugriff (PDF)

Quantifying non-threshold Auger-recombination processes in mid-wavelength infrared range HgCdTe quantum wells

Applied physics letters, 2023-10, Vol.123 (18)

2023

Volltextzugriff (PDF)

Intraband carrier relaxation in mid-infrared (3–4 μm) HgCdTe based structures: Effect of the carrier heating on the operating temperatures of bulk and quantum-well lasers

Journal of applied physics, 2023-02, Vol.133 (7)

2023

Volltextzugriff (PDF)

Temperature limitations for stimulated emission in 3–4 μm range due to threshold and non-threshold Auger recombination in HgTe/CdHgTe quantum wells

Applied physics letters, 2020-08, Vol.117 (8)

2020

Volltextzugriff (PDF)

Stimulated emission in the 2.8-3.5 μm wavelength range from Peltier cooled HgTe/CdHgTe quantum well heterostructures

Optics express, 2018-05, Vol.26 (10), p.12755-12760

2018

Volltextzugriff (PDF)

Near-infrared stimulated emission from indium-rich InGaN layers grown by plasma-assisted MBE

Applied physics letters, 2021-04, Vol.118 (15)

2021

Volltextzugriff (PDF)

Features of Formation of InxGa1 –xN Bulk Layers in the Immiscibility Gap of Solid Solutions (x ~ 0.6) by Molecular Beam Epitaxy with Plasma Nitrogen Activation

Semiconductors (Woodbury, N.Y.), 2024-03, Vol.58 (3), p.231-237

2024

Volltextzugriff (PDF)

Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures

Scientific reports, 2018-06, Vol.8 (1), p.9454-8, Article 9454

2018

Volltextzugriff (PDF)

Efficient long wavelength interband photoluminescence from HgCdTe epitaxial films at wavelengths up to 26 μ m

Applied physics letters, 2014-02, Vol.104 (7)

2014

Volltextzugriff (PDF)

Mid-IR stimulated emission in Hg(Cd)Te/CdHgTe quantum well structures up to 200 K due to suppressed Auger recombination

Laser physics, 2021-01, Vol.31 (1), p.15801

2021

Volltextzugriff (PDF)

Stimulated Emission at a Wavelength of 2.86 μm from In(Sb, As)/In(Ga, Al)As/GaAs Metamorphic Quantum Wells under Optical Pumping

JETP letters, 2019-09, Vol.110 (5), p.313-318

2019

Volltextzugriff (PDF)

Urbach absorption edge in epitaxial erbium-doped silicon

Journal of applied physics, 2015-02, Vol.117 (5)

2015

Volltextzugriff (PDF)

Laser Generation at Wavelengths 4.1–5.1 μm of CdxHg1–xTe/CdyHg1–yTe Quantum-Well Heterostructures with Microdisk Resonators

Journal of applied spectroscopy, 2022-11, Vol.89 (5), p.844-848

2022

Volltextzugriff (PDF)

Spectra and kinetics of THz photoconductivity in narrow-gap Hg1-xCdxTe (x < 0.2) epitaxial films

Semiconductor science and technology, 2013-12, Vol.28 (12)

2013

Volltextzugriff (PDF)

Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD

Semiconductors (Woodbury, N.Y.), 2019-08, Vol.53 (8), p.1138-1142

2019

Volltextzugriff (PDF)

Investigation of Stimulated Emission from HgTe/CdHgTe Quantum-Well Heterostructures in the 3–5 μm Atmospheric Transparency Window

Semiconductors (Woodbury, N.Y.), 2020-10, Vol.54 (10), p.1365-1370

2020

Volltextzugriff (PDF)

Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate

Semiconductors (Woodbury, N.Y.), 2018-05, Vol.52 (5), p.602-604

2018

Volltextzugriff (PDF)

Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics

Semiconductors (Woodbury, N.Y.), 2018-11, Vol.52 (11), p.1442-1447

2018

Volltextzugriff (PDF)

Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates

Semiconductors (Woodbury, N.Y.), 2017-11, Vol.51 (11), p.1527-1530

2017

Volltextzugriff (PDF)

On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (12), p.1547-1550

2018

Volltextzugriff (PDF)

Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate

Semiconductors (Woodbury, N.Y.), 2017-11, Vol.51 (11), p.1477-1480

2017

Volltextzugriff (PDF)

1 – 25 von 551

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(500)
Mit Volltextzugriff
(448)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(339)
Physical Sciences
(264)
Physics
(250)
Physics, Particles & Fields
(104)
Astronomy & Astrophysics
(70)
Technology
(69)
Dark Matter
(65)
Physics And Astronomy
(59)
Physics, Condensed Matter
(53)
Physics Of Elementary Particles And Fields
(48)
Materials Science
(43)
Life Sciences & Biomedicine
(41)
Physics, Nuclear
(41)
Physics, Applied
(33)
Nuclear Physics
(31)
Astronomy And Astrophysics
(29)
Instruments & Instrumentation
(29)
Instrumentation Related To Nuclear Science And Technology
(28)
Magnetism
(28)
Instrumentation And Detectors
(27)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(3)
... seit 90 Tagen
(5)

Menü

Weitere Dienste

Einstellungen

Investigation into Microwave Absorption in Semiconductors for Frequency-Multiplication Devices and Radiation-Output Control of Continuous and Pulsed Gyrotrons

Optically pumped stimulated emission in HgCdTe-based quantum wells: Toward continuous wave lasing in very long-wavelength infrared range

Auger recombination in narrow gap HgCdTe/CdHgTe quantum well heterostructures

Highly doped InP as a low loss plasmonic material for mid-IR region

Analysis of the optical gain due to free-to-bound electronic transitions in indium-rich InGaN layers

Quantifying non-threshold Auger-recombination processes in mid-wavelength infrared range HgCdTe quantum wells

Intraband carrier relaxation in mid-infrared (3–4 μm) HgCdTe based structures: Effect of the carrier heating on the operating temperatures of bulk and quantum-well lasers

Temperature limitations for stimulated emission in 3–4 μm range due to threshold and non-threshold Auger recombination in HgTe/CdHgTe quantum wells

Stimulated emission in the 2.8-3.5 μm wavelength range from Peltier cooled HgTe/CdHgTe quantum well heterostructures

Near-infrared stimulated emission from indium-rich InGaN layers grown by plasma-assisted MBE

Features of Formation of InxGa1 –xN Bulk Layers in the Immiscibility Gap of Solid Solutions (x ~ 0.6) by Molecular Beam Epitaxy with Plasma Nitrogen Activation

Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures

Efficient long wavelength interband photoluminescence from HgCdTe epitaxial films at wavelengths up to 26 μ m

Mid-IR stimulated emission in Hg(Cd)Te/CdHgTe quantum well structures up to 200 K due to suppressed Auger recombination

Stimulated Emission at a Wavelength of 2.86 μm from In(Sb, As)/In(Ga, Al)As/GaAs Metamorphic Quantum Wells under Optical Pumping

Urbach absorption edge in epitaxial erbium-doped silicon

Laser Generation at Wavelengths 4.1–5.1 μm of CdxHg1–xTe/CdyHg1–yTe Quantum-Well Heterostructures with Microdisk Resonators

Spectra and kinetics of THz photoconductivity in narrow-gap Hg1-xCdxTe (x < 0.2) epitaxial films

Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD

Investigation of Stimulated Emission from HgTe/CdHgTe Quantum-Well Heterostructures in the 3–5 μm Atmospheric Transparency Window

Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate

Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics

Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates

On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates

Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate

Suchergebnisse filtern