UB Paderborn / Katalog / Suche / in CDI

Optical Properties of ZnSe Epilayers and Films

Physica status solidi. A, Applied research, 1990-07, Vol.120 (1), p.11-59

1990

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Analysis of strain and impurity distribution in II–VI epilayers with optical methods

Journal of luminescence, 1992-06, Vol.52 (1), p.55-69

1992

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Shallow impurity- and defect-related complexes in undoped ZnSe crystals

Journal of crystal growth, 1994-04, Vol.138 (1), p.385-390

1994

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Magneto-optical investigation of the shallow lithium acceptor in zinc selenide

Journal of crystal growth, 1996-02, Vol.159 (1-4), p.414-417

1996

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Excitonic processes in highly excited ZnSe epilayers

Journal of luminescence, 1992-07, Vol.53 (1-6), p.435-438

1992

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Energy transfer processes via the interface of ZnSe/GaAs epilayers

Journal of crystal growth, 1994-04, Vol.138 (1), p.820-825

1994

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Comparative optical investigations of ZnSe/GaAs epilayers grown by molecular beam and hot-wall epitaxy

Journal of applied physics, 1990-12, Vol.68 (11), p.5630-5635

1990

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Resonant Raman scattering at bound excitons in ZnSe/GaAs epilayers

Semiconductor science and technology, 1991-09, Vol.6 (9A), p.A83-A89

1991

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High-Density Spectroscopy of ZnSe/GaAs Epilayers in the Near-Band-Edge Region

Physica status solidi. B. Basic research, 1990-05, Vol.159 (1), p.443-448

1990

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Exciton complexes in ZnSe layers: a tool for probing the strain distribution

Journal of crystal growth, 1992-02, Vol.117 (1), p.309-315

1992

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High-density luminescence and excitation spectroscopy of MBE-grown ZnSe/GaAs epilayers

Journal of crystal growth, 1990-04, Vol.101 (1), p.667-672

1990

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Dispersive and absorptive thermally induced optical bistability in ZnSe epilayers

Journal of luminescence, 1992-07, Vol.53 (1-6), p.363-366

1992

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Electrical and optical properties of Li-doped MBE-grown p-type ZnSe films

Semiconductor science and technology, 1991-09, Vol.6 (9A), p.A72-A75

1991

Volltextzugriff (PDF)

Thermally induced optical bistability in ZnSe epilayers grown by molecular-beam epitaxy

Journal of applied physics, 1990-09, Vol.68 (5), p.2532-2534

1990

Volltextzugriff (PDF)

Term structure of bound excitons in cubic ZnSe:Na

Journal of luminescence, 1991, Vol.48, p.138-142

1991

Volltextzugriff (PDF)

Analysis of strain and impurity distribution in II-VI epilayers with optical methods: Optical properties of wide band gap II-VI semiconductors

Journal of luminescence, 1992, Vol.52 (1-4), p.55-69

1992

Volltextzugriff (PDF)

Optical Properties of ZnSe Epilayers and Films

Physica status solidi. A, Applied research, 1990-07, Vol.120 (1), p.11-59

1990

Volltextzugriff (PDF)

Phase transition from the cubic to the hexagonal modification in thin CdS films on InP(110)

Advanced materials for optics and electronics, 1994-01, Vol.3 (1-6), p.11-14

1994

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Spectroscopy of bound excitons in cubic ZnS at moderate to high excitation densities

Physical review. B, Condensed matter, 1989-02, Vol.39 (6), p.3670-3676

1989

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Electronic structure and dynamical behaviour of different bound-exciton complexes in ZnSe bulk crystals

Physica. B, Condensed matter, 1993, Vol.185 (1), p.325-331

1993

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Nonlinear transmission of MBE-grown ZnSe epilayers in the near-band-edge region

Superlattices and microstructures, 1991, Vol.10 (2), p.247-252

1991

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Impurity and defect distribution in ZnTe/GaAs epilayers of different thickness

Journal of crystal growth, 1992-02, Vol.117 (1), p.290-296

1992

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Long-term stable thermally induced absorptive optical bistability in MBE-grown ZnSe epilayers

Superlattices and microstructures, 1990, Vol.8 (4), p.381-385

1990

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High-density and optical non-linearity effects in epitaxially grown ZnTe layers

Advanced materials for optics and electronics, 1994-01, Vol.3 (1-6), p.33-39

1994

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A Universal Turing Machine with 3 States and 9 Symbols

Developments in Language Theory, 2002, p.311-318

2002

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Optical Properties of ZnSe Epilayers and Films

Analysis of strain and impurity distribution in II–VI epilayers with optical methods

Shallow impurity- and defect-related complexes in undoped ZnSe crystals

Magneto-optical investigation of the shallow lithium acceptor in zinc selenide

Excitonic processes in highly excited ZnSe epilayers

Energy transfer processes via the interface of ZnSe/GaAs epilayers

Comparative optical investigations of ZnSe/GaAs epilayers grown by molecular beam and hot-wall epitaxy

Resonant Raman scattering at bound excitons in ZnSe/GaAs epilayers

High-Density Spectroscopy of ZnSe/GaAs Epilayers in the Near-Band-Edge Region

Exciton complexes in ZnSe layers: a tool for probing the strain distribution

High-density luminescence and excitation spectroscopy of MBE-grown ZnSe/GaAs epilayers

Dispersive and absorptive thermally induced optical bistability in ZnSe epilayers

Electrical and optical properties of Li-doped MBE-grown p-type ZnSe films

Thermally induced optical bistability in ZnSe epilayers grown by molecular-beam epitaxy

Term structure of bound excitons in cubic ZnSe:Na

Analysis of strain and impurity distribution in II-VI epilayers with optical methods: Optical properties of wide band gap II-VI semiconductors

Optical Properties of ZnSe Epilayers and Films

Phase transition from the cubic to the hexagonal modification in thin CdS films on InP(110)

Spectroscopy of bound excitons in cubic ZnS at moderate to high excitation densities

Electronic structure and dynamical behaviour of different bound-exciton complexes in ZnSe bulk crystals

Nonlinear transmission of MBE-grown ZnSe epilayers in the near-band-edge region

Impurity and defect distribution in ZnTe/GaAs epilayers of different thickness

Long-term stable thermally induced absorptive optical bistability in MBE-grown ZnSe epilayers

High-density and optical non-linearity effects in epitaxially grown ZnTe layers

A Universal Turing Machine with 3 States and 9 Symbols

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