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Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers

Crystal growth & design, 2021-03, Vol.21 (3), p.1666-1673

2021

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Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate

Applied physics letters, 2020-06, Vol.116 (23)

2020

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Study of critical optical confinement factor for GeSn-based multiple quantum well lasers

Applied physics letters, 2022-10, Vol.121 (17)

2022

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X-ray diffraction study of strain relaxation, spontaneous compositional gradient, and dislocation density in GeSn/Ge/Si(100) heterostructures

Semiconductor science and technology, 2020-07, Vol.35 (7), p.75009

2020

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Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift

Nano research, 2022-03, Vol.15 (3), p.2405-2412

2022

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Study of SiGeSn/GeSn single quantum well toward high-performance all-group-IV optoelectronics

Journal of applied physics, 2021-03, Vol.129 (9)

2021

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The Growth of Polarization Domains in Ultrathin Ferroelectric Films Seeded by the Tip of an Atomic Force Microscope

Nanoscale research letters, 2022-05, Vol.17 (1), p.52-52, Article 52

2022

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Low resistance Ohmic contacts to graded InGaN

Materials science in semiconductor processing, 2023-01, Vol.153, p.107114, Article 107114

2023

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Thermal stability study of gallium nitride based magnetic field sensor

Journal of applied physics, 2023-10, Vol.134 (14)

2023

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Energy band engineering toward hardened electronics in ionizing radiation environments via quantum gettering

Journal of applied physics, 2021-02, Vol.129 (8)

2021

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Band Offsets of the MOCVD-Grown β‑(Al0.21Ga0.79)2O3/β-Ga2O3 (010) Heterojunction

ACS applied materials & interfaces, 2022-07, Vol.14 (29), p.33944-33951

2022

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Investigation of the Structural and Optical Properties of Compositionally V‐Graded Strained InxGa1–xN Layers

physica status solidi (b), 2020-04, Vol.257 (4), p.n/a

2020

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Band Offsets of the MOCVD-Grown β-(Al 0.21 Ga 0.79 ) 2 O 3 /β-Ga 2 O 3 (010) Heterojunction

ACS applied materials & interfaces, 2022-07, Vol.14 (29), p.33944-33951

2022

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Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix

Journal of applied physics, 2018-12, Vol.124 (23)

2018

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Optical and structural study of deformation states in the GaN/AlN superlattices

Journal of applied physics, 2017-10, Vol.122 (15)

2017

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Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics

Optics letters, 2017-02, Vol.42 (3), p.387-390

2017

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Luminescence Properties of GaN/InxGa1−xN/InyGa1−yN Double Graded Structures (Zigzag Quantum Wells)

Journal of electronic materials, 2020-06, Vol.49 (6), p.3512-3519

2020

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Local Strain and Crystalline Defects in GaN/AlGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AlGaN Buried Layers

Crystal growth & design, 2019-01, Vol.19 (1), p.200-210

2019

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Polarization Effects in Graded AlGaN Nanolayers Revealed by Current-Sensing and Kelvin Probe Microscopy

ACS applied materials & interfaces, 2018-02, Vol.10 (7), p.6755-6763

2018

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Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate

AIP advances, 2018-02, Vol.8 (2), p.025104-025104-7

2018

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Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures

Journal of applied physics, 2018-05, Vol.123 (19)

2018

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High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si(111) substrate

Nanoscale research letters, 2015-02, Vol.10 (1), p.51-51, Article 51

2015

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Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys

Crystals (Basel), 2021-08, Vol.11 (8), p.905

2021

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Effect of indium accumulation on the growth and properties of ultrathin In(Ga)N/GaN quantum wells

Materials & design, 2020-05, Vol.190, p.108565, Article 108565

2020

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X-ray Reciprocal Space Mapping of Graded Al x Ga1 - x N Films and Nanowires

Nanoscale research letters, 2016-12, Vol.11 (1), p.81-81, Article 81

2016

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Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers

Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate

Study of critical optical confinement factor for GeSn-based multiple quantum well lasers

X-ray diffraction study of strain relaxation, spontaneous compositional gradient, and dislocation density in GeSn/Ge/Si(100) heterostructures

Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift

Study of SiGeSn/GeSn single quantum well toward high-performance all-group-IV optoelectronics

The Growth of Polarization Domains in Ultrathin Ferroelectric Films Seeded by the Tip of an Atomic Force Microscope

Low resistance Ohmic contacts to graded InGaN

Thermal stability study of gallium nitride based magnetic field sensor

Energy band engineering toward hardened electronics in ionizing radiation environments via quantum gettering

Band Offsets of the MOCVD-Grown β‑(Al0.21Ga0.79)2O3/β-Ga2O3 (010) Heterojunction

Investigation of the Structural and Optical Properties of Compositionally V‐Graded Strained InxGa1–xN Layers

Band Offsets of the MOCVD-Grown β-(Al 0.21 Ga 0.79 ) 2 O 3 /β-Ga 2 O 3 (010) Heterojunction

Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix

Optical and structural study of deformation states in the GaN/AlN superlattices

Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics

Luminescence Properties of GaN/InxGa1−xN/InyGa1−yN Double Graded Structures (Zigzag Quantum Wells)

Local Strain and Crystalline Defects in GaN/AlGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AlGaN Buried Layers

Polarization Effects in Graded AlGaN Nanolayers Revealed by Current-Sensing and Kelvin Probe Microscopy

Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate

Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures

High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si(111) substrate

Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys

Effect of indium accumulation on the growth and properties of ultrathin In(Ga)N/GaN quantum wells

X-ray Reciprocal Space Mapping of Graded Al x Ga1 - x N Films and Nanowires

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