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Anomalous Charge Collection in Silicon Carbide Schottky Barrier Diodes and Resulting Permanent Damage and Single-Event Burnout

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3343-3348

2006

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Single-Event Burnout of Silicon Carbide Schottky Barrier Diodes Caused by High Energy Protons

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2379-2383

2007

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A fabrication technique for paper-based analytical devices via two-sided patterning with thermal-transfer printer and laminator

Sensors and actuators. B, Chemical, 2023-01, Vol.375, p.132886, Article 132886

2023

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Investigation of Single-Event Damages on Silicon Carbide (SiC) Power MOSFETs

IEEE transactions on nuclear science, 2014-08, Vol.61 (4), p.1924-1928

2014

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Single-Event Effects Induced on Atom Switch-based Field-Programmable Gate Array

IEEE transactions on nuclear science, 2019-07, Vol.66 (7), p.1355-1360

2019

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Single-Event Damage Observed in GaN-on-Si HEMTs for Power Control Applications

IEEE transactions on nuclear science, 2018-08, Vol.65 (8), p.1956-1963

2018

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Physical Analysis of Damage Sites Introduced by SEGR in Silicon Vertical Power MOSFETs and Implications for Postirradiation Gate-Stress Test

IEEE transactions on nuclear science, 2019-07, Vol.66 (7), p.1710-1714

2019

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IEEE_Xplore

Thermal Runaway in SiC Schottky Barrier Diodes Caused by Heavy Ions

IEEE transactions on nuclear science, 2019-07, Vol.66 (7), p.1688-1693

2019

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Single-Event Damages Caused by Heavy Ions Observed in AlGaN/GaN HEMTs

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2734-2738

2011

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Characteristic Charge Collection Mechanism Observed in FinFET SRAM Cells

IEEE transactions on nuclear science, 2022-08, Vol.69 (8), p.1833-1839

2022

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IEEE_Xplore

Rediscovery of Single-Event Gate Rupture Mechanism in Power MOSFETs

IEEE transactions on nuclear science, 2012-08, Vol.59 (4), p.749-754

2012

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IEEE_Xplore

Study of Latent Damage in Power MOSFETs Caused by Heavy Ion Irradiation

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.3388-3393

2008

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Applicability of Redundant Pairs of SOI Transistors for Analog Circuits and Their Applications to Phase-Locked Loop Circuits

IEEE transactions on nuclear science, 2013-02, Vol.60 (1), p.230-235

2013

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Characterization of Microdose Damage Caused by Single Heavy Ion Observed in Trench Type Power MOSFETs

IEEE transactions on nuclear science, 2010-12, Vol.57 (6), p.3257-3261

2010

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IEEE_Xplore

DICE-Based Flip-Flop With SET Pulse Discriminator on a 90 nm Bulk CMOS Process

IEEE transactions on nuclear science, 2010-12, Vol.57 (6), p.3602-3608

2010

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Single-event burnout of Super-junction power MOSFETs

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3332-3335

2004

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Averaged LET Spectra for SEE Rate Prediction for Power Devices

IEEE transactions on nuclear science, 2009-08, Vol.56 (4), p.2056-2060

2009

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IEEE_Xplore

Analysis of angular dependence of proton-induced multiple-bit upsets in a synchronous SRAM

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2200-2204

2005

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IEEE_Xplore

Improved model for single-event burnout mechanism

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3336-3341

2004

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Design of digital hysteresis current control circuit in AC-DC converter for wind power generation

2017 IEEE 6th International Conference on Renewable Energy Research and Applications (ICRERA), 2017, p.510-514

2017

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IEEE_Xplore

Angular dependence of multiple-bit upsets induced by protons in a 16 mbit DRAM

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3270-3277

2004

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IEEE_Xplore

Improvement of transient characteristics of AC-DC converter connected with HVDC bus

2017 IEEE 12th International Conference on Power Electronics and Drive Systems (PEDS), 2017, p.474-478

2017

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Enhanced avalanche multiplication factor and single-event burnout

IEEE transactions on nuclear science, 2003-12, Vol.50 (6), p.2233-2238

2003

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Development of MOS Transistors for Radiation-Hardened Large Scale Integrated Circuits and Analysis of Radiation-Induced Degradation

Journal of nuclear science and technology, 1994-01, Vol.31 (1), p.24-33

1994

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A new digital hysteresis current control for switching power converters

2016 3rd Conference on Power Engineering and Renewable Energy (ICPERE), 2016, p.113-117

2016

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Anomalous Charge Collection in Silicon Carbide Schottky Barrier Diodes and Resulting Permanent Damage and Single-Event Burnout

Single-Event Burnout of Silicon Carbide Schottky Barrier Diodes Caused by High Energy Protons

A fabrication technique for paper-based analytical devices via two-sided patterning with thermal-transfer printer and laminator

Investigation of Single-Event Damages on Silicon Carbide (SiC) Power MOSFETs

Single-Event Effects Induced on Atom Switch-based Field-Programmable Gate Array

Single-Event Damage Observed in GaN-on-Si HEMTs for Power Control Applications

Physical Analysis of Damage Sites Introduced by SEGR in Silicon Vertical Power MOSFETs and Implications for Postirradiation Gate-Stress Test

Thermal Runaway in SiC Schottky Barrier Diodes Caused by Heavy Ions

Single-Event Damages Caused by Heavy Ions Observed in AlGaN/GaN HEMTs

Characteristic Charge Collection Mechanism Observed in FinFET SRAM Cells

Rediscovery of Single-Event Gate Rupture Mechanism in Power MOSFETs

Study of Latent Damage in Power MOSFETs Caused by Heavy Ion Irradiation

Applicability of Redundant Pairs of SOI Transistors for Analog Circuits and Their Applications to Phase-Locked Loop Circuits

Characterization of Microdose Damage Caused by Single Heavy Ion Observed in Trench Type Power MOSFETs

DICE-Based Flip-Flop With SET Pulse Discriminator on a 90 nm Bulk CMOS Process

Single-event burnout of Super-junction power MOSFETs

Averaged LET Spectra for SEE Rate Prediction for Power Devices

Analysis of angular dependence of proton-induced multiple-bit upsets in a synchronous SRAM

Improved model for single-event burnout mechanism

Design of digital hysteresis current control circuit in AC-DC converter for wind power generation

Angular dependence of multiple-bit upsets induced by protons in a 16 mbit DRAM

Improvement of transient characteristics of AC-DC converter connected with HVDC bus

Enhanced avalanche multiplication factor and single-event burnout

Development of MOS Transistors for Radiation-Hardened Large Scale Integrated Circuits and Analysis of Radiation-Induced Degradation

A new digital hysteresis current control for switching power converters

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