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Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping

Applied physics letters, 2014-02, Vol.104 (8), p.83513

2014

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Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control

Surface and interface analysis, 2001-10, Vol.31 (10), p.987-999

Kuball, M.

2001

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Leakage mechanisms in GaN-on-GaN vertical pn diodes

Applied physics letters, 2018-06, Vol.112 (23)

2018

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Mixed-size diamond seeding for low-thermal-barrier growth of CVD diamond onto GaN and AlN

Carbon (New York), 2020-10, Vol.167, p.620-626

2020

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Review on mechanical joining by plastic deformation

Journal of advanced joining processes, 2022-06, Vol.5, p.100113, Article 100113

2022

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On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress

Applied physics letters, 2012-07, Vol.101 (3)

2012

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Solid immersion lenses for enhancing the optical resolution of thermal and electroluminescence mapping of GaN-on-SiC transistors

Journal of applied physics, 2015-10, Vol.118 (14)

2015

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Simultaneous determination of the lattice thermal conductivity and grain/grain thermal resistance in polycrystalline diamond

Acta materialia, 2017-10, Vol.139, p.215-225

2017

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Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode

Journal of applied physics, 2014-03, Vol.115 (11)

2014

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Deep level traps in (010) β-Ga2O3 epilayers grown by metal organic chemical vapor deposition on Sn-doped β-Ga2O3 substrates

Journal of applied physics, 2024-07, Vol.136 (4)

2024

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Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures

IEEE transactions on electron devices, 2006-10, Vol.53 (10), p.2438-2447

2006

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Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices

IEEE transactions on electron devices, 2007-12, Vol.54 (12), p.3152-3158

2007

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Atomic layer deposited α-Ga2O3 solar-blind photodetectors

Journal of physics. D, Applied physics, 2019-11, Vol.52 (47)

2019

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Process-adapted temperature application within a two-stage rivet forming process for high nitrogen steel

Proceedings of the Institution of Mechanical Engineers. Part L, Journal of materials, design and applications, 2022-06, Vol.236 (6), p.1285-1301

2022

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Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors

Applied physics letters, 2014-06, Vol.104 (22)

2014

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Importance of impurity diffusion for early stage degradation in AlGaN/GaN high electron mobility transistors upon electrical stress

Applied physics letters, 2010-07, Vol.97 (2), p.023503-023503-3

2010

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3-D Printed Microjet Impingement Cooling for Thermal Management of Ultrahigh-Power GaN Transistors

IEEE transactions on components, packaging, and manufacturing technology (2011), 2021-05, Vol.11 (5), p.748-754

2021

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Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors

Applied physics letters, 2011-11, Vol.99 (22), p.223501-223501-3

2011

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Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography

Journal of applied physics, 2014-02, Vol.115 (6)

2014

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Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD

Journal of applied physics, 2019-03, Vol.125 (10)

2019

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InN thin film lattice dynamics by grazing incidence inelastic x-ray scattering

Physical review letters, 2011-05, Vol.106 (20), p.205501-205501, Article 205501

2011

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Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy

Journal of applied physics, 2009-11, Vol.106 (9), p.094509-094509-4

2009

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Origin of kink effect in AlGaN/GaN high electron mobility transistors: Yellow luminescence and Fe doping

Applied physics letters, 2012-10, Vol.101 (15)

2012

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Understanding of Leading-Edge Protection Performance Using Nano-Silicates for Modification

Journal of physics. Conference series, 2019-05, Vol.1222 (1), p.12016

2019

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Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

Applied physics letters, 2014-08, Vol.105 (6)

2014

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Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping

Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control

Leakage mechanisms in GaN-on-GaN vertical pn diodes

Mixed-size diamond seeding for low-thermal-barrier growth of CVD diamond onto GaN and AlN

Review on mechanical joining by plastic deformation

On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress

Solid immersion lenses for enhancing the optical resolution of thermal and electroluminescence mapping of GaN-on-SiC transistors

Simultaneous determination of the lattice thermal conductivity and grain/grain thermal resistance in polycrystalline diamond

Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode

Deep level traps in (010) β-Ga2O3 epilayers grown by metal organic chemical vapor deposition on Sn-doped β-Ga2O3 substrates

Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures

Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices

Atomic layer deposited α-Ga2O3 solar-blind photodetectors

Process-adapted temperature application within a two-stage rivet forming process for high nitrogen steel

Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors

Importance of impurity diffusion for early stage degradation in AlGaN/GaN high electron mobility transistors upon electrical stress

3-D Printed Microjet Impingement Cooling for Thermal Management of Ultrahigh-Power GaN Transistors

Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors

Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography

Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD

InN thin film lattice dynamics by grazing incidence inelastic x-ray scattering

Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy

Origin of kink effect in AlGaN/GaN high electron mobility transistors: Yellow luminescence and Fe doping

Understanding of Leading-Edge Protection Performance Using Nano-Silicates for Modification

Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

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