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Activation of Mg implanted in GaN by multicycle rapid thermal annealing

Electronics letters, 2014-01, Vol.50 (3), p.197-198

2014

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Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN

Journal of crystal growth, 2012-07, Vol.350 (1), p.21-26

2012

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GaN vertical and lateral polarity heterostructures on GaN substrates

Journal of crystal growth, 2011-10, Vol.332 (1), p.43-47

2011

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Long range, non-destructive characterization of GaN substrates for power devices

Journal of crystal growth, 2019-01, Vol.506, p.178-184

2019

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The development and validation of sensitive LC-MS/MS method for quantitative bioanalysis of carmofur in mouse plasma and its application to pharmacokinetic study

Journal of chromatography. B, Analytical technologies in the biomedical and life sciences, 2022-12, Vol.1212, p.123516-123516, Article 123516

2022

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Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy

Scripta materialia, 2014-12, Vol.93, p.44-47

2014

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Field demonstration of mode-division multiplexing upgrade scenarios on commercial networks

Optics express, 2013-12, Vol.21 (25), p.31036-31046

2013

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Investigation of the Epitaxial Graphene/p-SiC Heterojunction

IEEE electron device letters, 2012-11, Vol.33 (11), p.1610-1612

2012

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IEEE_Xplore

Step edge influence on barrier height and contact area in vertical heterojunctions between epitaxial graphene and n-type 4H-SiC

Applied physics letters, 2014-02, Vol.104 (7)

2014

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Characterization of Recessed-Gate AlGaN/GaN HEMTs as a Function of Etch Depth

Journal of electronic materials, 2010-05, Vol.39 (5), p.478-481

2010

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Ultrathin strained-SOI by stress balance on compliant substrates and FET performance

IEEE transactions on electron devices, 2005-10, Vol.52 (10), p.2207-2214

2005

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IEEE_Xplore

Development and validation of an LC–MS/MS method for the determination of ARN14988, an acid ceramidase inhibitor, and its application to a pharmacokinetic study in a mouse model

Biomedical chromatography, 2024-01, Vol.38 (1), p.e5754-n/a

2024

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Thick homoepitaxial GaN with low carrier concentration for high blocking voltage

Journal of crystal growth, 2010-09, Vol.312 (18), p.2616-2619

2010

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Strain relaxation of SiGe islands on compliant oxide

Journal of applied physics, 2002-06, Vol.91 (12), p.9716-9722

2002

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Vertical conduction mechanism of the epitaxial graphene/n-type 4H-SiC heterojunction at cryogenic temperatures

Applied physics letters, 2012-05, Vol.100 (19), p.193506-193506-4

2012

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Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films

IEEE electron device letters, 2012-01, Vol.33 (1), p.23-25

2012

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IEEE_Xplore

Compliant substrates: A comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides

Journal of electronic materials, 2000-07, Vol.29 (7), p.897-900

2000

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Buckling suppression of SiGe islands on compliant substrates

Journal of applied physics, 2003-11, Vol.94 (10), p.6875-6882

2003

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Luminescence characteristics of zinc oxide nanocrystals deposited on glass via a solution method

Physica. E, Low-dimensional systems & nanostructures, 2009, Vol.41 (3), p.487-489

2009

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Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

Materials science forum, 2010-01, Vol.645-648, p.633-636

2010

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A Field Trial of Mode-Division Multiplexing

2014 IEEE Photonics Society Summer Topical Meeting Series, 2014, p.196-197

2014

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IEEE_Xplore

Directional diffusion and void formation at a Si (001) bonded wafer interface

Journal of applied physics, 2002-08, Vol.92 (4), p.1945-1949

2002

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Maximizing uniaxial tensile strain in large-area silicon-on-insulator islands on compliant substrates

Journal of applied physics, 2006-07, Vol.100 (2), p.023537-023537-9

2006

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Universal conformal ultrathin dielectrics on epitaxial graphene enabled by a graphene oxide seed layer

Applied physics letters, 2017-01, Vol.110 (1)

2017

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An AlN/Ultrathin AlGaN/GaN HEMT Structure for Enhancement-Mode Operation Using Selective Etching

IEEE electron device letters, 2009-12, Vol.30 (12), p.1251-1253

2009

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IEEE_Xplore

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Activation of Mg implanted in GaN by multicycle rapid thermal annealing

Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN

GaN vertical and lateral polarity heterostructures on GaN substrates

Long range, non-destructive characterization of GaN substrates for power devices

The development and validation of sensitive LC-MS/MS method for quantitative bioanalysis of carmofur in mouse plasma and its application to pharmacokinetic study

Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy

Field demonstration of mode-division multiplexing upgrade scenarios on commercial networks

Investigation of the Epitaxial Graphene/p-SiC Heterojunction

Step edge influence on barrier height and contact area in vertical heterojunctions between epitaxial graphene and n-type 4H-SiC

Characterization of Recessed-Gate AlGaN/GaN HEMTs as a Function of Etch Depth

Ultrathin strained-SOI by stress balance on compliant substrates and FET performance

Development and validation of an LC–MS/MS method for the determination of ARN14988, an acid ceramidase inhibitor, and its application to a pharmacokinetic study in a mouse model

Thick homoepitaxial GaN with low carrier concentration for high blocking voltage

Strain relaxation of SiGe islands on compliant oxide

Vertical conduction mechanism of the epitaxial graphene/n-type 4H-SiC heterojunction at cryogenic temperatures

Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films

Compliant substrates: A comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides

Buckling suppression of SiGe islands on compliant substrates

Luminescence characteristics of zinc oxide nanocrystals deposited on glass via a solution method

Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

A Field Trial of Mode-Division Multiplexing

Directional diffusion and void formation at a Si (001) bonded wafer interface

Maximizing uniaxial tensile strain in large-area silicon-on-insulator islands on compliant substrates

Universal conformal ultrathin dielectrics on epitaxial graphene enabled by a graphene oxide seed layer

An AlN/Ultrathin AlGaN/GaN HEMT Structure for Enhancement-Mode Operation Using Selective Etching

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