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Mechanism for radiative recombination and defect properties of GaP/GaNP core/shell nanowires

Applied physics letters, 2012-10, Vol.101 (16), p.163106

2012

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Photoreflectance studies of optical transitions in GaNPAs intermediate band solar cell absorbers

Solar energy materials and solar cells, 2018-12, Vol.188 (C), p.99-104

2018

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Preparation of hollow platinum nanospheres/carbon nanotubes nanohybrids and their improved stability for electro-oxidation of methanol

Electrochimica acta, 2011-10, Vol.56 (24), p.8645-8650

2011

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Effects of RE3+ as a co-dopant in blue-emitting long-lasting phosphors, Sr3Al10SiO20:Eu2

Journal of materials science, 2006-09, Vol.41 (17), p.5500-5503

2006

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THz transient photoconductivity of the III-V dilute nitride GaPyAs1−y−xNx

Semiconductor science and technology, 2018-12, Vol.33 (12)

2018

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Raman spectroscopy of GaP/GaNP core/shell nanowires

Applied physics letters, 2014-11, Vol.105 (19), p.193102

2014

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Growth and characterization of dilute nitride GaNxP1−x nanowires and GaNxP1−x/GaNyP1−y core/shell nanowires on Si (111) by gas source molecular beam epitaxy

Applied physics letters, 2014-08, Vol.105 (7)

2014

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Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy

Applied physics letters, 2012-01, Vol.100 (5), p.053108-053108-3

2012

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GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy

Applied physics letters, 2013-03, Vol.102 (11)

2013

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THz transient photoconductivity of the III–V dilute nitride GaP y As 1− y − x N x

Semiconductor science and technology, 2018-12, Vol.33 (12), p.125009

2018

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Raman study of a-Si:H films deposited by PECVD at various silane temperatures before glow-discharge

Applied physics. A, Materials science & processing, 2008-05, Vol.91 (2), p.349-352

2008

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Silicon dopant passivation by nitrogen during molecular beam epitaxy of GaNAs

Applied physics. A, Materials science & processing, 2015-08, Vol.120 (2), p.635-639

2015

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Intrastriatal transplantation of Sertoli cells may improve amphetamine-induced rotation and tyrosine hydroxylase immunoreactivity of the striatum in hemiparkinsonian rats

Brain research, 1999-08, Vol.838 (1), p.227-233

1999

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Energy Upconversion in GaP/GaNP Core/Shell Nanowires for Enhanced Near-Infrared Light Harvesting

Small (Weinheim an der Bergstrasse, Germany), 2014-11, Vol.10 (21), p.4403-4408

2014

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Temperature evolution of carrier dynamics in GaNxPyAs1−y−xalloys

Journal of applied physics, 2015-05, Vol.117 (17)

2015

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White-light-emitting long-lasting phosphorescence in Dy3+-doped SrSiO3

Journal of solid state chemistry, 2006, Vol.179 (1), p.266-269

2006

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The influence of dopant type and carrier concentration on the effective mass and Seebeck coefficient of GaNxAs1−x thin films

Applied physics letters, 2011-08, Vol.99 (7)

2011

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Temperature evolution of carrier dynamics in GaN{sub x}P{sub y}As{sub 1−y−x}alloys

Journal of applied physics, 2015-05, Vol.117 (17)

2015

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Dilute nitride InNP quantum dots: Growth and photoluminescence mechanism

Applied physics letters, 2014-10, Vol.105 (17), p.173112

2014

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Active immunisation targeting soluble murine tumour necrosis factor alpha is safe and effective in collagen-induced arthritis model treatment

Clinical and experimental rheumatology, 2016-03, Vol.34 (2), p.242

2016

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Carrier Lifetimes in a III-V- N Intermediate-Band Semiconductor

Physical review applied, 2017-01, Vol.7 (1)

2017

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Growth and characterization of dilute nitride GaN x P 1−x nanowires and GaN x P 1−x /GaN y P 1−y core/shell nanowires on Si (111) by gas source molecular beam epitaxy

Applied physics letters, 2014, Vol.105 (7), p.072107

2014

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The influence of dopant type and carrier concentration on the effective mass and Seebeck coefficient of GaN x As 1−x thin films

Applied physics letters, 2011-08, Vol.99 (7), p.072114-072114-3

2011

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Growth and characterization of dilute nitride GaN{sub x}P{sub 1−x} nanowires and GaN{sub x}P{sub 1−x}/GaN{sub y}P{sub 1−y} core/shell nanowires on Si (111) by gas source molecular beam epitaxy

Applied physics letters, 2014-08, Vol.105 (7)

2014

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Optical properties of GaP/GaNP core/shell nanowires: a temperature-dependent study

Nanoscale research letters, 2013-05, Vol.8 (1), p.239-239, Article 239

2013

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Mechanism for radiative recombination and defect properties of GaP/GaNP core/shell nanowires

Photoreflectance studies of optical transitions in GaNPAs intermediate band solar cell absorbers

Preparation of hollow platinum nanospheres/carbon nanotubes nanohybrids and their improved stability for electro-oxidation of methanol

Effects of RE3+ as a co-dopant in blue-emitting long-lasting phosphors, Sr3Al10SiO20:Eu2

THz transient photoconductivity of the III-V dilute nitride GaPyAs1−y−xNx

Raman spectroscopy of GaP/GaNP core/shell nanowires

Growth and characterization of dilute nitride GaNxP1−x nanowires and GaNxP1−x/GaNyP1−y core/shell nanowires on Si (111) by gas source molecular beam epitaxy

Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy

GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy

THz transient photoconductivity of the III–V dilute nitride GaP y As 1− y − x N x

Raman study of a-Si:H films deposited by PECVD at various silane temperatures before glow-discharge

Silicon dopant passivation by nitrogen during molecular beam epitaxy of GaNAs

Intrastriatal transplantation of Sertoli cells may improve amphetamine-induced rotation and tyrosine hydroxylase immunoreactivity of the striatum in hemiparkinsonian rats

Energy Upconversion in GaP/GaNP Core/Shell Nanowires for Enhanced Near-Infrared Light Harvesting

Temperature evolution of carrier dynamics in GaNxPyAs1−y−xalloys

White-light-emitting long-lasting phosphorescence in Dy3+-doped SrSiO3

The influence of dopant type and carrier concentration on the effective mass and Seebeck coefficient of GaNxAs1−x thin films

Temperature evolution of carrier dynamics in GaN{sub x}P{sub y}As{sub 1−y−x}alloys

Dilute nitride InNP quantum dots: Growth and photoluminescence mechanism

Active immunisation targeting soluble murine tumour necrosis factor alpha is safe and effective in collagen-induced arthritis model treatment

Carrier Lifetimes in a III-V- N Intermediate-Band Semiconductor

Growth and characterization of dilute nitride GaN x P 1−x nanowires and GaN x P 1−x /GaN y P 1−y core/shell nanowires on Si (111) by gas source molecular beam epitaxy

The influence of dopant type and carrier concentration on the effective mass and Seebeck coefficient of GaN x As 1−x thin films

Growth and characterization of dilute nitride GaN{sub x}P{sub 1−x} nanowires and GaN{sub x}P{sub 1−x}/GaN{sub y}P{sub 1−y} core/shell nanowires on Si (111) by gas source molecular beam epitaxy

Optical properties of GaP/GaNP core/shell nanowires: a temperature-dependent study

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