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Dynamic on-State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses

IEEE transactions on power electronics, 2019-02, Vol.34 (2), p.1044-1053

2019

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IEEE_Xplore

Maximum Junction Temperatures of SiC Power Devices

IEEE transactions on electron devices, 2009-02, Vol.56 (2), p.337-342

Sheng, Kuang

2009

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IEEE_Xplore

A Study of the Effects of Digital Learning on Learning Motivation and Learning Outcome

Eurasia journal of mathematics, science and technology education, 2017-07, Vol.13 (7), p.3553-3564

2017

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Fluorine-Implanted Termination for Vertical GaN Schottky Rectifier With High Blocking Voltage and Low Forward Voltage Drop

IEEE electron device letters, 2019-07, Vol.40 (7), p.1040-1043

2019

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IEEE_Xplore

Vertical β-Ga2O3 Schottky Barrier Diodes with Field Plate Assisted Negative Beveled Termination and Positive Beveled Termination

IEEE electron device letters, 2023-01, Vol.44 (1), p.1-1

2023

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IEEE_Xplore

A Novel Self-Controlled Double Trench Gate Snapback Free Reverse-Conducting IGBT With a Built-in Trench Barrier Diode

IEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1-7

2020

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IEEE_Xplore

A Snapback-Free and Reverse Conducting SOI-LIGBT With Self-Adaptive Electron Barriers

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.739-745

2024

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IEEE_Xplore

Prediction of the development of acute kidney injury following cardiac surgery by machine learning

Critical care (London, England), 2020-07, Vol.24 (1), p.478-478, Article 478

2020

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A Novel Solution to the Turn-On Recovery Problem of the Floating Island Device

IEEE transactions on electron devices, 2023-09, Vol.70 (9), p.4596-4603

2023

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IEEE_Xplore

A highly sensitive and moisture-resistant gas sensor for diabetes diagnosis with Pt@In2O3 nanowires and a molecular sieve for protection

NPG Asia materials, 2018-04, Vol.10 (4), p.293-308

2018

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Conductivity Modulation in Vertical GaN PiN Diode: Evidence and Impact

IEEE electron device letters, 2021-03, Vol.42 (3), p.300-303

2021

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IEEE_Xplore

Current-Collapse-Free and Fast Reverse Recovery Performance in Vertical GaN-on-GaN Schottky Barrier Diode

IEEE transactions on power electronics, 2019-06, Vol.34 (6), p.5012-5018

2019

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IEEE_Xplore

Direct Water Splitting Through Vibrating Piezoelectric Microfibers in Water

The journal of physical chemistry letters, 2010-03, Vol.1 (6), p.997-1002

2010

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Plasma Spreading Layers: An Effective Method for Improving Surge and Avalanche Robustness of SiC Devices

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5687-5694

2021

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IEEE_Xplore

Improved Device Performance in AlGaN/GaN HEMT by Forming Ohmic Contact With Laser Annealing

IEEE electron device letters, 2018-08, Vol.39 (8), p.1137-1140

2018

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IEEE_Xplore

Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling

IEEE journal of emerging and selected topics in power electronics, 2019-09, Vol.7 (3), p.1425-1439

2019

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IEEE_Xplore

In vitro hepatic differentiation of human mesenchymal stem cells

Hepatology (Baltimore, Md.), 2004-12, Vol.40 (6), p.1275-1284

2004

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Comparison of double chevron-cut and biplanar distal femoral osteotomy techniques: A biomechanical study

PloS one, 2024-04, Vol.19 (4), p.e0296300-e0296300

2024

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Piezoelectrochemical Effect: A New Mechanism for Azo Dye Decolorization in Aqueous Solution through Vibrating Piezoelectric Microfibers

Journal of physical chemistry. C, 2012-06, Vol.116 (24), p.13045-13051

2012

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Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With Double-RESURFs Technology for Power ICs

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1572-1579

2024

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IEEE_Xplore

Numerical Simulation and Analytical Modeling of Multichannel AlGaN/GaN Devices

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1-8

2024

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IEEE_Xplore

1.2-kV Planar SiC MOSFETs With Improved Short-Circuit Capability by Adding Plasma Spreading Layer

IEEE transactions on electron devices, 2023-09, Vol.70 (9), p.4730-4736

2023

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IEEE_Xplore

Fully-Vertical GaN-on-SiC Schottky Barrier Diode: Role of Conductive Buffer Structure

IEEE transactions on electron devices, 2023-02, Vol.70 (2), p.619-626

2023

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IEEE_Xplore

4H-SiC Super-Junction JFET: Design and Experimental Demonstration

IEEE electron device letters, 2020-03, Vol.41 (3), p.445-448

2020

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IEEE_Xplore

Revisit incidence of complications after impacted mandibular third molar extraction: A nationwide population-based cohort study

PloS one, 2021-02, Vol.16 (2), p.e0246625-e0246625

2021

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Dynamic on-State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses

Maximum Junction Temperatures of SiC Power Devices

A Study of the Effects of Digital Learning on Learning Motivation and Learning Outcome

Fluorine-Implanted Termination for Vertical GaN Schottky Rectifier With High Blocking Voltage and Low Forward Voltage Drop

Vertical β-Ga2O3 Schottky Barrier Diodes with Field Plate Assisted Negative Beveled Termination and Positive Beveled Termination

A Novel Self-Controlled Double Trench Gate Snapback Free Reverse-Conducting IGBT With a Built-in Trench Barrier Diode

A Snapback-Free and Reverse Conducting SOI-LIGBT With Self-Adaptive Electron Barriers

Prediction of the development of acute kidney injury following cardiac surgery by machine learning

A Novel Solution to the Turn-On Recovery Problem of the Floating Island Device

A highly sensitive and moisture-resistant gas sensor for diabetes diagnosis with Pt@In2O3 nanowires and a molecular sieve for protection

Conductivity Modulation in Vertical GaN PiN Diode: Evidence and Impact

Current-Collapse-Free and Fast Reverse Recovery Performance in Vertical GaN-on-GaN Schottky Barrier Diode

Direct Water Splitting Through Vibrating Piezoelectric Microfibers in Water

Plasma Spreading Layers: An Effective Method for Improving Surge and Avalanche Robustness of SiC Devices

Improved Device Performance in AlGaN/GaN HEMT by Forming Ohmic Contact With Laser Annealing

Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling

In vitro hepatic differentiation of human mesenchymal stem cells

Comparison of double chevron-cut and biplanar distal femoral osteotomy techniques: A biomechanical study

Piezoelectrochemical Effect: A New Mechanism for Azo Dye Decolorization in Aqueous Solution through Vibrating Piezoelectric Microfibers

Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With Double-RESURFs Technology for Power ICs

Numerical Simulation and Analytical Modeling of Multichannel AlGaN/GaN Devices

1.2-kV Planar SiC MOSFETs With Improved Short-Circuit Capability by Adding Plasma Spreading Layer

Fully-Vertical GaN-on-SiC Schottky Barrier Diode: Role of Conductive Buffer Structure

4H-SiC Super-Junction JFET: Design and Experimental Demonstration

Revisit incidence of complications after impacted mandibular third molar extraction: A nationwide population-based cohort study

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