UB Paderborn / Katalog / Suche / in CDI

Fabrication of site-controlled InGaN quantum dots using reactive-ion etching

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.609-612

2012

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Semiconductor nanoring lasers

Applied physics letters, 2011-05, Vol.98 (20), p.201105-201105-3

2011

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Room-temperature quantum-dot-like luminescence from site-controlled InGaN quantum disks

Applied physics letters, 2011-12, Vol.99 (26), p.263105-263105-4

2011

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Lasing in a metal-clad microring resonator

Applied physics letters, 2011-03, Vol.98 (13), p.131107-131107-3

2011

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Plasmonic backscattering enhanced inverted photovoltaics

Applied physics letters, 2011-09, Vol.99 (11), p.113306-113306-3

2011

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Origin of broad luminescence from site-controlled InGaN nanodots fabricated by selective-area epitaxy

Physica status solidi. A, Applications and materials science, 2014-03, Vol.211 (3), p.531-535

2014

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Angular selective semi-transparent photovoltaics

Optics express, 2012-03, Vol.20 Suppl 2 (S2), p.A265-A269

2012

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Angular selective backreflector for semitransparent photovoltaics

Applied physics letters, 2012-08, Vol.101 (6), p.63302

2012

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Novel Epitaxial Nanostructures for the Improvement of InGaN LEDs Efficiency

IEEE journal of selected topics in quantum electronics, 2009-07, Vol.15 (4), p.1073-1079

2009

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Phase-field simulations of GaN/InGaN quantum dot growth by selective area epitaxy

Journal of crystal growth, 2012-12, Vol.361, p.57-65

2012

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MOCVD growth of vertically aligned InGaN nanowires

Journal of crystal growth, 2013-05, Vol.370, p.311-313

2013

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Slow light using semiconductor quantum dots

Journal of physics. Condensed matter, 2004-09, Vol.16 (35), p.S3727-S3735

2004

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Origin of broad luminescence from site-controlled InGaN nanodots fabricated by selective-area epitaxy (Phys. Status Solidi A 3∕2014)

Physica status solidi. A, Applications and materials science, 2014-03, Vol.211 (3), p.np-n/a

2014

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Slow light in semiconductor heterostructures

Journal of physics. D, Applied physics, 2007-03, Vol.40 (5), p.R93-R107

2007

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Angle dependent photon management in thin film photovoltaics using anodized aluminum oxide

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2013, p.1907-1909

2013

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Reducing inhomogeneity in the dynamic properties of quantum dots via self-aligned plasmonic cavities

Nanotechnology, 2018-01, Vol.29 (1), p.015201-015201

2018

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Angle dependant scattering by dielectric nanostructures for light management in thin film photovoltaics

CLEO: 2013, 2013, p.1-2

2013

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Photoluminescence study of semipolar {101¯1} InGaN∕GaN multiple quantum wells grown by selective area epitaxy

Applied physics letters, 2007-04, Vol.90 (14)

2007

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Variable optical buffer using slow light in semiconductor nanostructures

Proceedings of the IEEE, 2003-11, Vol.91 (11), p.1884-1897

2003

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Delay-bandwidth product and storage density in slow-light optical buffers

Electronics letters, 2005-02, Vol.41 (4), p.208-209

2005

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Origami Solar-Tracking Concentrator Array for Planar Photovoltaics

ACS photonics, 2016-11, Vol.3 (11), p.2134-2140

2016

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Broadband characteristics of surface plasmon enhanced solar cells

2010 35th IEEE Photovoltaic Specialists Conference, 2010, p.002952-002954

2010

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Angle selective transparent photovoltaics using anodized alumina

2012 Conference on Lasers and Electro-Optics (CLEO), 2012, p.1-2

2012

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Plasmonic nanostructures for angle selective photovoltaics

CLEO: 2011 - Laser Science to Photonic Applications, 2011, p.1-2

2011

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Improving the Radiative Efficiency of InGaN Quantum Dots via an Open Top Cavity

ACS photonics, 2017-04, Vol.4 (4), p.795-799

2017

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Fabrication of site-controlled InGaN quantum dots using reactive-ion etching

Semiconductor nanoring lasers

Room-temperature quantum-dot-like luminescence from site-controlled InGaN quantum disks

Lasing in a metal-clad microring resonator

Plasmonic backscattering enhanced inverted photovoltaics

Origin of broad luminescence from site-controlled InGaN nanodots fabricated by selective-area epitaxy

Angular selective semi-transparent photovoltaics

Angular selective backreflector for semitransparent photovoltaics

Novel Epitaxial Nanostructures for the Improvement of InGaN LEDs Efficiency

Phase-field simulations of GaN/InGaN quantum dot growth by selective area epitaxy

MOCVD growth of vertically aligned InGaN nanowires

Slow light using semiconductor quantum dots

Origin of broad luminescence from site-controlled InGaN nanodots fabricated by selective-area epitaxy (Phys. Status Solidi A 3∕2014)

Slow light in semiconductor heterostructures

Angle dependent photon management in thin film photovoltaics using anodized aluminum oxide

Reducing inhomogeneity in the dynamic properties of quantum dots via self-aligned plasmonic cavities

Angle dependant scattering by dielectric nanostructures for light management in thin film photovoltaics

Photoluminescence study of semipolar {101¯1} InGaN∕GaN multiple quantum wells grown by selective area epitaxy

Variable optical buffer using slow light in semiconductor nanostructures

Delay-bandwidth product and storage density in slow-light optical buffers

Origami Solar-Tracking Concentrator Array for Planar Photovoltaics

Broadband characteristics of surface plasmon enhanced solar cells

Angle selective transparent photovoltaics using anodized alumina

Plasmonic nanostructures for angle selective photovoltaics

Improving the Radiative Efficiency of InGaN Quantum Dots via an Open Top Cavity

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