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World's First GAA 3nm Foundry platform Technology (SF3) with Novel Multi-Bridge-Channel-FET (MBCFET™) Process

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023, p.1-2

2023

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Highly Reliable/Manufacturable 4nm FinFET Platform Technology (SF4X) for HPC Application with Dual-CPP/HP-HD Standard Cells

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023, p.1-2

2023

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Novel High-Performance Analog Devices for Advanced Low-Power High-$k$ Metal Gate Complementary Metal--Oxide--Semiconductor Technology

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4), p.04DC13-04DC13-5

2011

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Advanced BEOL process integration for logic technology nodes

2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM), 2023, p.1-3

2023

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Influence of annealing condition on the properties of sputtered hafnium oxide

Journal of non-crystalline solids, 2002-05, Vol.303 (1), p.139-143

2002

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Thermal stability of Al- and Zr-doped HfO2 thin films grown by direct current magnetron sputtering

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2005-09, Vol.23 (5), p.1413-1418

2005

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EUV Minimum Pitch Single Patterning for 5nm Node Manufacturing

2022 IEEE International Interconnect Technology Conference (IITC), 2022, p.133-135

2022

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Performance of DRAM Cell Transistor with Thermal Desorption Silicon Etching (TDSE) and Selective Si Channel Epi Techniques

Japanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 4B), p.1865-1869

2003

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The Second Generation of Integrated Stack Capacitor (ISC) for Power Integrity Improvement

2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM), 2023, p.1-3

2023

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High Performance 5G mobile SoC Design-Technology Co-Optimization for PPA and Manufacturability with 5nm EUV FinFET technology

2022 International Electron Devices Meeting (IEDM), 2022, p.27.4.1-27.4.4

2022

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Product Performance Aware 3rd Generation GAA Platform Transistor Design with Extreme Small Local Layout Effect and Transistor Variation

2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2024, p.1-2

2024

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Channel Strain Characterization in Embedded SiGe by Nano-beam Diffraction

ECS transactions, 2008, Vol.16 (10), p.545-549

2008

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14nm FinFET Node Embedded MRAM Technology for Automotive Non-Volatile RAM Applications with Endurance Over 1E12-Cycles

2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2024, p.1-2

2024

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Physical and electrical degradation of ZrO2 thin films with aluminum electrodes

Materials science & engineering. B, Solid-state materials for advanced technology, 2003-09, Vol.102 (1-3), p.108-112

2003

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A study on the microstructure and electrical properties of CeO2 thin films for gate dielectric applications

Microelectronic engineering, 2001-05, Vol.56 (1-2), p.187-190

2001

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Formation and Thermal Stability of Ti-Capped Co-silicide from Co-Ta Alloy Films on (100) Si and Polycrystalline Silicon

Journal of the Korean Physical Society, 2002-04, Vol.40 (4), p.737

2002

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Increased Thermal Stability of Co-silicide Using Co-Ta Alloy Films

MRS proceedings, 2001, Vol.670, Article K6.5

2001

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17.1 A 10nm FinFET 128Mb SRAM with assist adjustment system for power, performance, and area optimization

2016 IEEE International Solid-State Circuits Conference (ISSCC), 2016, p.306-307

2016

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Ex Situ and in Situ Methods for Oxide and Carbon Removal from AlN and GaN Surfaces

MRS proceedings, 1996, Vol.395, Article 739

1996

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Removal of Fluorine From a Si (100) Surface by a Remote RF Hydrogen Plasma

MRS proceedings, 1995, Vol.386, Article 357

1995

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Novel High-Performance Analog Devices for Advanced Low-Power High- k Metal Gate Complementary Metal–Oxide–Semiconductor Technology

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4S), p.4

2011

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The effects of Ta on the formation of Ni-silicide in Ni0.95xTax0.05/Si systems

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-12, Vol.114-115, p.241-245

2004

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Thermal stability of Al- and Zr-doped HfO 2 thin films grown by direct current magnetron sputtering

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2005-09, Vol.23 (5), p.1413-1418

2005

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The effects of Ta on the formation of Ni-silicide in Ni 0.95xTa x0.05/Si systems

Materials science & engineering. B, Solid-state materials for advanced technology, 2004, Vol.114, p.241-245

2004

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Characteristics of ZrO[sub 2] Films with Al and Pt Gate Electrodes

Journal of the Electrochemical Society, 2003, Vol.150 (12), p.G849

2003

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World's First GAA 3nm Foundry platform Technology (SF3) with Novel Multi-Bridge-Channel-FET (MBCFET™) Process

Highly Reliable/Manufacturable 4nm FinFET Platform Technology (SF4X) for HPC Application with Dual-CPP/HP-HD Standard Cells

Novel High-Performance Analog Devices for Advanced Low-Power High-$k$ Metal Gate Complementary Metal--Oxide--Semiconductor Technology

Advanced BEOL process integration for logic technology nodes

Influence of annealing condition on the properties of sputtered hafnium oxide

Thermal stability of Al- and Zr-doped HfO2 thin films grown by direct current magnetron sputtering

EUV Minimum Pitch Single Patterning for 5nm Node Manufacturing

Performance of DRAM Cell Transistor with Thermal Desorption Silicon Etching (TDSE) and Selective Si Channel Epi Techniques

The Second Generation of Integrated Stack Capacitor (ISC) for Power Integrity Improvement

High Performance 5G mobile SoC Design-Technology Co-Optimization for PPA and Manufacturability with 5nm EUV FinFET technology

Product Performance Aware 3rd Generation GAA Platform Transistor Design with Extreme Small Local Layout Effect and Transistor Variation

Channel Strain Characterization in Embedded SiGe by Nano-beam Diffraction

14nm FinFET Node Embedded MRAM Technology for Automotive Non-Volatile RAM Applications with Endurance Over 1E12-Cycles

Physical and electrical degradation of ZrO2 thin films with aluminum electrodes

A study on the microstructure and electrical properties of CeO2 thin films for gate dielectric applications

Formation and Thermal Stability of Ti-Capped Co-silicide from Co-Ta Alloy Films on (100) Si and Polycrystalline Silicon

Increased Thermal Stability of Co-silicide Using Co-Ta Alloy Films

17.1 A 10nm FinFET 128Mb SRAM with assist adjustment system for power, performance, and area optimization

Ex Situ and in Situ Methods for Oxide and Carbon Removal from AlN and GaN Surfaces

Removal of Fluorine From a Si (100) Surface by a Remote RF Hydrogen Plasma

Novel High-Performance Analog Devices for Advanced Low-Power High- k Metal Gate Complementary Metal–Oxide–Semiconductor Technology

The effects of Ta on the formation of Ni-silicide in Ni0.95xTax0.05/Si systems

Thermal stability of Al- and Zr-doped HfO 2 thin films grown by direct current magnetron sputtering

The effects of Ta on the formation of Ni-silicide in Ni 0.95xTa x0.05/Si systems

Characteristics of ZrO[sub 2] Films with Al and Pt Gate Electrodes

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