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Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying

Physical review. B, Condensed matter, 1998-12, Vol.58 (24), p.R15981-R15984

1998

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Ordering of diagnostic information in encoded medical images. Accuracy progression

Opto-electronics review, 2008-01, Vol.16 (1), p.49-59

2008

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Ripening and annealing effects in InAs/GaAs(001) quantum dot formation

Journal of applied physics, 2004-07, Vol.96 (1), p.668-674

2004

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Surface morphology evolution during the overgrowth of large InAs–GaAs quantum dots

Applied physics letters, 2001-11, Vol.79 (22), p.3615-3617

2001

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Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dots

Surface science, 2001-10, Vol.492 (3), p.345-353

2001

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Wetting layer evolution in InAs/GaAs( [formula omitted]) heteroepitaxy: effects of surface reconstruction and strain

Surface science, 2002-10, Vol.517 (1), p.8-16

2002

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Atomic scale structure and morphology of (In,Ga)As-capped InAs quantum dots

Journal of applied physics, 2006-02, Vol.99 (4), p.043505-043505-6

2006

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Atomic hydrogen cleaning of GaAs( [formula omitted]): a scanning tunnelling microscopy study

Surface science, 2004, Vol.548 (1), p.L1-L6

2004

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Nanostructure formation in InAs/InP(001) heteroepitaxy: Importance of surface reconstruction

Physical review. B, Condensed matter and materials physics, 2008-10, Vol.78 (15), Article 155307

2008

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Understanding the growth mode transition in InAs/GaAs(0 0 1) quantum dot formation

Surface science, 2003-06, Vol.532, p.822-827

2003

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Effect of growth rate on the size, composition, and optical properties of InAs/GaAs quantum dots grown by molecular-beam epitaxy

Physical review. B, Condensed matter, 2000-10, Vol.62 (16), p.10891-10895

2000

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Island size scaling for submonolayer growth of InAs on GaAs(001)- ( 2 × 4 ) : Strain and surface reconstruction effects

Physical review. B, Condensed matter, 2000-04, Vol.61 (16), p.R10551-R10554

2000

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Variations in critical coverage for InAs/GaAs quantum dot formation in bilayer structures

Journal of crystal growth, 2002-09, Vol.244 (1), p.39-48

2002

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Hydrogen adsorption on GaAs(0 0 1)-c(4 × 4)

Surface science, 2004-01, Vol.549 (2), p.143-148

2004

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Optimizing the growth of 1.3 μm InAs/GaAs quantum dots

Physical review. B, Condensed matter, 2001-12, Vol.64 (23), Article 235317

2001

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The study of in situ scanning tunnelling microscope characterization on GaN thin film grown by plasma assisted molecular beam epitaxy

Applied physics letters, 2013-03, Vol.102 (11)

2013

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Role of two- and three-dimensional surface structures in InAs-GaAs(001) quantum dot nucleation

Physical review. B, Condensed matter, 2002-09, Vol.66 (12), Article 121307

2002

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Growth rate effects on the size, composition and optical properties of InAs/GaAs quantum dots grown by molecular beam epitaxy

Journal of crystal growth, 2001-07, Vol.227, p.1000-1004

2001

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First-principles study of the interaction of hydrogen with GaAs(001)

Physical review. B, Condensed matter, 2003-08, Vol.68 (7), Article 073311

2003

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Surface morphology and reconstruction changes during heteroepitaxial growth of InAs on GaAs(0 0 1)-(2×4)

Surface science, 2001-06, Vol.482, p.891-897

2001

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Scaling behavior in InAs/GaAs(001) quantum-dot formation

Physical review. B, Condensed matter, 2002-11, Vol.66 (20), Article 201302

2002

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Optical properties of bilayer InAs/GaAs quantum dot structures: Influence of strain and surface morphology

Physical review. B, Condensed matter, 2002-08, Vol.66 (7), Article 075316

2002

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Hydrogen adsorption on GaAs(001)-c(4 × 4)

Surface science, 2003, Vol.549 (2), p.143-148

2003

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Understanding the growth mode transition in InAs/GaAs(0 0 1) quantum dot formation

Surface science, 2003, Vol.532-35, p.822-827

2003

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Surface morphology and reconstruction changes during heteroepitaxial growth of InAs on GaAs(001)-(2 x 4)

Surface science, 2001, Vol.482-85, p.891-897

2001

Volltextzugriff (PDF)

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Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying

Ordering of diagnostic information in encoded medical images. Accuracy progression

Ripening and annealing effects in InAs/GaAs(001) quantum dot formation

Surface morphology evolution during the overgrowth of large InAs–GaAs quantum dots

Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dots

Wetting layer evolution in InAs/GaAs( [formula omitted]) heteroepitaxy: effects of surface reconstruction and strain

Atomic scale structure and morphology of (In,Ga)As-capped InAs quantum dots

Atomic hydrogen cleaning of GaAs( [formula omitted]): a scanning tunnelling microscopy study

Nanostructure formation in InAs/InP(001) heteroepitaxy: Importance of surface reconstruction

Understanding the growth mode transition in InAs/GaAs(0 0 1) quantum dot formation

Effect of growth rate on the size, composition, and optical properties of InAs/GaAs quantum dots grown by molecular-beam epitaxy

Island size scaling for submonolayer growth of InAs on GaAs(001)- ( 2 × 4 ) : Strain and surface reconstruction effects

Variations in critical coverage for InAs/GaAs quantum dot formation in bilayer structures

Hydrogen adsorption on GaAs(0 0 1)-c(4 × 4)

Optimizing the growth of 1.3 μm InAs/GaAs quantum dots

The study of in situ scanning tunnelling microscope characterization on GaN thin film grown by plasma assisted molecular beam epitaxy

Role of two- and three-dimensional surface structures in InAs-GaAs(001) quantum dot nucleation

Growth rate effects on the size, composition and optical properties of InAs/GaAs quantum dots grown by molecular beam epitaxy

First-principles study of the interaction of hydrogen with GaAs(001)

Surface morphology and reconstruction changes during heteroepitaxial growth of InAs on GaAs(0 0 1)-(2×4)

Scaling behavior in InAs/GaAs(001) quantum-dot formation

Optical properties of bilayer InAs/GaAs quantum dot structures: Influence of strain and surface morphology

Hydrogen adsorption on GaAs(001)-c(4 × 4)

Understanding the growth mode transition in InAs/GaAs(0 0 1) quantum dot formation

Surface morphology and reconstruction changes during heteroepitaxial growth of InAs on GaAs(001)-(2 x 4)

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