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Effects of Strain on the Carrier Mobility in Silicon Nanowires

Nano letters, 2012-07, Vol.12 (7), p.3545-3550

2012

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Modelling of silicon oxynitridation by nitrous oxide using the reaction rate approach

Journal of applied physics, 2013-12, Vol.114 (22)

Dominique Krzeminski, Christophe

2013

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Stress mapping in strain-engineered silicon p-type MOSFET device: A comparison between process simulation and experiments

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2012-03, Vol.30 (2)

Krzeminski, Christophe D.

2012

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Surface-induced optimal packing of two-dimensional molecular networks

Physical review letters, 2015-02, Vol.114 (6), p.066101-066101, Article 066101

2015

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Modelling of Silicon Oxynitridation by Nitrous Oxide using the Reaction Rate Approach

Journal of applied physics, 2013-12, Vol.114

Krzeminski, Christophe

2013

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Silicon dry oxidation kinetics at low temperature in the nanometric range: Modeling and experiment

Journal of applied physics, 2007-03, Vol.101 (6), p.064908-064908-8

2007

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Electrical molecular switch addressed by chemical stimuli

Nanoscale, 2020-05, Vol.12 (18), p.1127-1139

2020

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Modelling and engineering of stress based controlled oxidation effects for silicon nanostructure patterning

Nanotechnology, 2013-12, Vol.24 (49), p.495301-14

2013

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Regrowth of oxide-embedded amorphous silicon studied with molecular dynamics

Journal of applied physics, 2011-06, Vol.109 (12), p.123509-123509-5

2011

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Molecular dynamics simulations of the solid phase epitaxy of Si: Growth mechanism and orientation effects

Journal of applied physics, 2009-09, Vol.106 (6), p.063519-063519-8

2009

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Modelling and engineering of stress based controlled oxidation effects for silicon nanostructures patterning

Nanotechnology, 2013-11, Vol.24 (49)

2013

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Atomic Scale Modeling of Two-Dimensional Molecular Self-Assembly on a Passivated Si Surface

Journal of physical chemistry. C, 2014-06, Vol.118 (24), p.12817-12825

2014

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New Photomechanical Molecular Switch Based on a Linear π‑Conjugated System

Journal of physical chemistry. C, 2017-06, Vol.121 (22), p.12416-12425

2017

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Graphene buffer layer on Si-terminated SiC studied with an empirical interatomic potential

Journal of applied physics, 2010-05, Vol.107 (10), p.103514-103514-7

2010

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Molecular Rectifying Diodes from Self-Assembly on Silicon

Nano letters, 2003-06, Vol.3 (6), p.741-746

2003

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Supramolecular self-assembly on the B-Si(111)-(√3x√3) R30° surface: From single molecules to multicomponent networks

Surface science reports, 2017-09, Vol.72 (4), p.316-349

2017

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Understanding of the retarded oxidation effects in silicon nanostructures

Applied physics letters, 2012-06, Vol.100 (26)

2012

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High Conductance Ratio in Molecular Optical Switching of Functionalized Nanoparticle Self-Assembled Nanodevices

Journal of physical chemistry. C, 2015-09, Vol.119 (36), p.21173-21183

2015

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Solid phase epitaxy amorphous silicon re-growth: some insight from empirical molecular dynamics simulation

The European physical journal. B, Condensed matter physics, 2011-09, Vol.81, p.283-290

2011

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Optical absorption of silicon nanowires

Journal of applied physics, 2012-08, Vol.112 (3)

2012

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Optical and electrical properties of nanostructured implanted silicon n+-p junction passivated by atomic layer deposited Al2O3

Physica. E, Low-dimensional systems & nanostructures, 2017-09, Vol.93, p.190-195

2017

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Nanoscale Carrier Multiplication Mapping in a Si Diode

Nano letters, 2014-10, Vol.14 (10), p.5636-5640

2014

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Molecular dynamics simulation of the recrystallization of amorphous Si layers: Comprehensive study of the dependence of the recrystallization velocity on the interatomic potential

Journal of applied physics, 2007-06, Vol.101 (12)

2007

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Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

Nanotechnology, 2011-08, Vol.22 (31), p.315710-1-6

2011

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Energy-Band Engineering for Improved Charge Retention in Fully Self-Aligned Double Floating-Gate Single-Electron Memories

Nano letters, 2011-11, Vol.11 (11), p.4520-4526

2011

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Effects of Strain on the Carrier Mobility in Silicon Nanowires

Modelling of silicon oxynitridation by nitrous oxide using the reaction rate approach

Stress mapping in strain-engineered silicon p-type MOSFET device: A comparison between process simulation and experiments

Surface-induced optimal packing of two-dimensional molecular networks

Modelling of Silicon Oxynitridation by Nitrous Oxide using the Reaction Rate Approach

Silicon dry oxidation kinetics at low temperature in the nanometric range: Modeling and experiment

Electrical molecular switch addressed by chemical stimuli

Modelling and engineering of stress based controlled oxidation effects for silicon nanostructure patterning

Regrowth of oxide-embedded amorphous silicon studied with molecular dynamics

Molecular dynamics simulations of the solid phase epitaxy of Si: Growth mechanism and orientation effects

Modelling and engineering of stress based controlled oxidation effects for silicon nanostructures patterning

Atomic Scale Modeling of Two-Dimensional Molecular Self-Assembly on a Passivated Si Surface

New Photomechanical Molecular Switch Based on a Linear π‑Conjugated System

Graphene buffer layer on Si-terminated SiC studied with an empirical interatomic potential

Molecular Rectifying Diodes from Self-Assembly on Silicon

Supramolecular self-assembly on the B-Si(111)-(√3x√3) R30° surface: From single molecules to multicomponent networks

Understanding of the retarded oxidation effects in silicon nanostructures

High Conductance Ratio in Molecular Optical Switching of Functionalized Nanoparticle Self-Assembled Nanodevices

Solid phase epitaxy amorphous silicon re-growth: some insight from empirical molecular dynamics simulation

Optical absorption of silicon nanowires

Optical and electrical properties of nanostructured implanted silicon n+-p junction passivated by atomic layer deposited Al2O3

Nanoscale Carrier Multiplication Mapping in a Si Diode

Molecular dynamics simulation of the recrystallization of amorphous Si layers: Comprehensive study of the dependence of the recrystallization velocity on the interatomic potential

Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

Energy-Band Engineering for Improved Charge Retention in Fully Self-Aligned Double Floating-Gate Single-Electron Memories

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