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Core-shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping

Nanoscale, 2015-07, Vol.7 (27), p.11692-11701

2015

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InGaN/GaN Core–Shell Single Nanowire Light Emitting Diodes with Graphene-Based P‑Contact

Nano letters, 2014-05, Vol.14 (5), p.2456-2465

2014

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Excitonic Diffusion in InGaN/GaN Core–Shell Nanowires

Nano letters, 2016-01, Vol.16 (1), p.243-249

2016

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Influence of polarity on GaN thermal stability

Journal of crystal growth, 2005-01, Vol.274 (1), p.38-46

2005

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Growth and characterization of single-crystalline gallium nitride using (100) LiAlO2 substrates

Journal of crystal growth, 2005-01, Vol.274 (1-2), p.14-20

2005

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The measurement of electrostatic potentials in core/shell GaN nanowires using off-axis electron holography

Journal of physics. Conference series, 2013-01, Vol.471 (1), p.12041-4

2013

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The Application of Off-Axis Electron Holography to Electrically Biased Single GaN Nanowires for Electrical Resistivity Measurement

Microscopy and microanalysis, 2013-08, Vol.19 (S2), p.1502-1503

2013

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InN nanorods and nanowires grown on different substrates

Physica status solidi. C, 2008-05, Vol.5 (6), p.1795-1798

2008

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Oxynitride mediated epitaxy of gallium nitride on silicon(1 1 1) substrates in a merged hydride/metal-organic vapor phase epitaxy system

Materials science & engineering. B, Solid-state materials for advanced technology, 2006-02, Vol.127 (1), p.91-97

2006

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Transmission Electron Microscopy Study of InN Nanorods

Physics of Semiconductors; Part A, 2007, Vol.893, p.111-112

2007

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Core-shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mappingElectronic supplementary information (ESI) available: Additional experimental details, data on the simulation of the EBIC maps and CL spectra. See DOI: 10.1039/c5nr00623f

2015-07

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Thermal Stability of MOCVD and HVPE GaN Layers in H2, HCl, NH3 and N2

Physica status solidi. A, Applied research, 2001-11, Vol.188 (1), p.467-471

2001

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High breakdown M–I–M structures on bulk AlN

Solid-state electronics, 2002-04, Vol.46 (4), p.573-576

2002

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GaN Growth on Si Using ZnO Buffer Layer

MRS proceedings, 2003, Vol.764, Article C7.7

2003

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The Influence of Substrate Polarity on the Blue Emission from As-doped GaN Layers Grown by Molecular Beam Epitaxy

MRS proceedings, 2003, Vol.798, Article Y10.66

2003

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Pt-coated InN nanorods for selective detection of hydrogen at room temperature

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2005-09, Vol.23 (5), p.1891-1894

2005

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Point defect compensation phenomena in CdTe

Calphad, 1997-12, Vol.21 (4), p.469-473

1997

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GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon Substrates

Materials science forum, 2002-04, Vol.389-393, p.1473-1476

2002

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InN Nanorods Grown on Different Planes of Al2O3

Microscopy and microanalysis, 2007-08, Vol.13 (S02), p.724-725

2007

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Large area GaN substrates

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-12, Vol.66 (1), p.26-29

1999

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Growth and characterization of single-crystalline gallium nitride using (10 0) LiA1O2 substrates

Journal of crystal growth, 2005-01, Vol.274 (1-2), p.14-20

2005

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Comparison of structural perfection of InN layers and InN nanorods grown on the c- and r-planes of Al2O3

Physica status solidi. C, 2007-06, Vol.4 (7), p.2469-2473

2007

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Growth of GaN single crystal substrates

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-05, Vol.59 (1), p.6-11

1999

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Comparison of structural perfection of InN layers and InN nanorods grown on the c‐ and r‐planes of Al 2 O 3

Physica status solidi. C, 2007-06, Vol.4 (7), p.2469-2473

2007

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Microstructures of GaN Films Grown on a LiGaO2 New Substrate by Metalorganic Chemical Vapor Deposition

MRS proceedings, 1997, Vol.468

1997

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Core-shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping

InGaN/GaN Core–Shell Single Nanowire Light Emitting Diodes with Graphene-Based P‑Contact

Excitonic Diffusion in InGaN/GaN Core–Shell Nanowires

Influence of polarity on GaN thermal stability

Growth and characterization of single-crystalline gallium nitride using (100) LiAlO2 substrates

The measurement of electrostatic potentials in core/shell GaN nanowires using off-axis electron holography

The Application of Off-Axis Electron Holography to Electrically Biased Single GaN Nanowires for Electrical Resistivity Measurement

InN nanorods and nanowires grown on different substrates

Oxynitride mediated epitaxy of gallium nitride on silicon(1 1 1) substrates in a merged hydride/metal-organic vapor phase epitaxy system

Transmission Electron Microscopy Study of InN Nanorods

Thermal Stability of MOCVD and HVPE GaN Layers in H2, HCl, NH3 and N2

High breakdown M–I–M structures on bulk AlN

GaN Growth on Si Using ZnO Buffer Layer

The Influence of Substrate Polarity on the Blue Emission from As-doped GaN Layers Grown by Molecular Beam Epitaxy

Pt-coated InN nanorods for selective detection of hydrogen at room temperature

Point defect compensation phenomena in CdTe

GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon Substrates

InN Nanorods Grown on Different Planes of Al2O3

Large area GaN substrates

Growth and characterization of single-crystalline gallium nitride using (10 0) LiA1O2 substrates

Comparison of structural perfection of InN layers and InN nanorods grown on the c- and r-planes of Al2O3

Growth of GaN single crystal substrates

Comparison of structural perfection of InN layers and InN nanorods grown on the c‐ and r‐planes of Al 2 O 3

Microstructures of GaN Films Grown on a LiGaO2 New Substrate by Metalorganic Chemical Vapor Deposition

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